STB45NF3LL N-CHANNEL 30V - 0.014Ω - 45A D2PAK STripFET II POWER MOSFET TYPE STB45NF3LL ■ ■ ■ ■ VDSS RDS(on) ID 30V <0.018Ω 45A TYPICAL RDS(on) = 0.016Ω @4.5V OPTIMAL RDS(ON) x Qg TRADE-OFF @ 4.5V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED DESCRIPTION This application specific Power MOSFET is the third genaration of STMicroelectronics unique “Single Feature Size ” strip-based process. The resulting transistor shows the best trade-off between on-resistance ang gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance. 3 1 D2PAK ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Value Unit Drain-source Voltage (VGS = 0) Parameter 30 V Drain-gate Voltage (RGS = 20 kΩ) 30 V ± 16 V Gate- source Voltage ID Drain Current (continuos) at TC = 25°C 45 A ID Drain Current (continuos) at TC = 100°C 32 A IDM (●) Drain Current (pulsed) 180 A PTOT Total Dissipation at TC = 25°C 70 W Derating Factor 0.46 W/°C Single Pulse Avalanche Energy 241 mJ – 55 to 175 °C EAS (1) Tstg Tj Storage Temperature Max. Operating Junction Temperature ( ●) Pulse width limi ted by safe operating area October 2001 (1) Starting Tj= 25°C, ID= 22.5A, VDD= 24V 1/9 STB45NF3LL THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2.14 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 Zero Gate Voltage Drain Current (V GS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 10 µA Gate-body Leakage Current (VDS = 0) VGS = ± 16 V ±100 nA Max. Unit 30 V ON (1) Symbol Parameter VGS(th) Gate Threshold Voltage R DS(on) Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250µA Min. Typ. 1 V VGS = 10 V, I D = 22.5 A 0.014 0.018 Ω VGS = 4.5V, ID = 22.5 A 0.016 0.020 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) 2/9 Parameter Test Conditions Min. Forward Transconductance VDS =15 V , ID = 22.5 A 20 S VDS = 25V, f = 1 MHz, VGS = 0 C iss Input Capacitance 800 pF Coss Output Capacitance 250 pF Crss Reverse Transfer Capacitance 60 pF STB45NF3LL ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Q gd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions Min. VDD = 15 V, I D = 22.5A RG = 4.7Ω VGS = 4.5V (Resistive Load, see Fig. 3) VDD = 24V, ID = 45A, VGS = 5V Typ. Max. Unit 17 ns 100 ns 12.5 4.6 5.2 17 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Condit ions Min. VDD = 15V, ID = 22.5A, R G = 4.7Ω, VGS = 4.5V (Resistive Load, see Fig. 3) 20 21 ns ns SOURCE DRAIN DIODE Symbol Max. Unit Source-drain Current 45 A ISDM (2) Source-drain Current (pulsed) 180 A VSD (1) Forward On Voltage ISD = 45A, VGS = 0 1.3 V Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 45A, di/dt = 100A/µs, VDD = 15V, Tj = 150°C (see test circuit, Figure 5) ISD trr Qrr IRRM Parameter Test Conditions Min. Typ. 35 44 2.5 ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/9 STB45NF3LL Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/9 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations STB45NF3LL Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Tj 5/9 STB45NF3LL Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STB45NF3LL D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 0.315 10 E1 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.015 0º 8º 3 V2 0.4 7/9 1 STB45NF3LL D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. DIM. mm A0 MIN. 10.5 MAX. MIN. MAX. 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 E 1.59 1.65 1.61 1.85 0.062 0.063 0.065 0.073 F K0 11.4 4.8 11.6 5.0 0.449 0.456 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 R 1.9 50 2.1 0.075 0.082 1.574 T W 0.25 23.7 0.35 0.0098 0.0137 24.3 0.933 0.956 * on sales type 8/9 inch MIN. 330 MAX. A B 1.5 C D 12.8 20.2 13.2 0.504 0.520 0795 G 24.4 26.4 0.960 1.039 N 100 T TAPE MECHANICAL DATA MAX. inch BASE QTY 1000 12.992 0.059 3.937 30.4 1.197 BULK QTY 1000 STB45NF3LL Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2001 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 9/9