STD616A HIGH VOLTAGE NPN POWER TRANSISTOR ■ ■ ■ ■ ■ ■ REVERSE PINS OUT Vs STANDARD IPAK (TO-251) / DPAK (TO-252) PACKAGES HIGH VOLTAGE CAPABILITY HIGH DC CURRENT GAIN THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION APPLICATIONS: ■ SWITCH MODE POWER SUPPLIES DESCRIPTION The STD616A is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability. 1 1 2 3 IPAK TO-251 (Suffix ”-1”) 3 DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 1000 V Collector-Emitter Voltage (IB = 0) 450 V Emitter-Base Voltage (IC = 0) 12 V Collector Current 1.6 A Collector Peak Current (tp < 5 ms) 2.4 A Base Current 0.8 A V CES Collector-Emitter Voltage (V BE = 0) V CEO V EBO IC I CM IB I BM Base Peak Current (tp < 5 ms) P t ot Total Dissipation at Tc = 25 C T stg St orage Temperature Tj o Max. Operating Junction Temperature September 2001 1.2 A 20 W -65 to 150 o C 150 o C 1/6 STD616A THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max o 6.25 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES Parameter Collector Cut-off Current (V BE = 0 V) V CEO(sus )∗ Collector-Emitter Sustaining Voltage (I B = 0) V EBO Test Cond ition s V CE = 1000 V V CE = 1000 V I C = 100 mA Min. o T j = 125 C L = 25 mH Typ . Max. Un it 50 0.5 µA mA 450 V 12 V Emitter-Base Voltage (I C = 0) I E = 1 mA V CE(sat )∗ Collector-Emitter Saturation Voltage I C = 250 mA I C = 0.8 A I B = 65 mA I B = 250 mA 0.3 0.5 V V V BE(s at)∗ Base-Emitt er Saturation Voltage I C = 250 mA I C = 0.8 A I B = 65 mA I B = 250 mA 1 1.2 V V DC Current Gain IC IC IC IC t on ts tf RESISTIVE LO AD Turn O n Time Storage Time Fall Time V CC = 250 V I B1 = 65 mA I C = 250 mA IB2 = -130 mA 0.2 5 0.65 µs µs µs t on ts tf RESISTIVE LO AD Turn O n Time Storage Time Fall Time V CC = 250 V I B1 = 160 mA I C = 0.8 A I B2 = -0.4 A 1 2.5 0.35 µs µs µs ts tf INDUCTIVE LO AD Storage Time Fall Time V c l = 300 V I B1 = 65 mA L = 200 µH IC = 250 mA IB2 = -130 mA 5 0.5 µs µs ts tf INDUCTIVE LO AD Storage Time Fall Time V c l = 300 V I B1 = 160 mA L = 200 µH IC = 0.8 A I B2 = -0.4 A 2.5 0.25 µs µs h F E∗ ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/6 = = = = 200 µA 300 mA 480 mA 1.6 A V CE = 5 V V CE = 5 V V CE = 5 V V CE = 5 V 17 25 12 4 STD616A Safe Operating Area Derating Curve Reverse Biased SOA 3/6 STD616A TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A3 0.70 1.30 0.028 0.051 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 B3 0.85 B5 B6 C 0.033 0.30 0.012 0.95 0.037 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.237 0.244 E 6.40 6.60 0.252 0.260 0.181 G 4.40 4.60 0.173 H 15.90 16.30 0.626 0.642 L 9.00 9.40 0.354 0.370 L1 0.80 1.20 0.031 L2 0.80 V1 10o 1.00 0.047 0.031 0.039 10o P032NR/E 4/6 STD616A TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 L4 V2 0.8 0.60 0 o 0.031 1.00 o 8 0.024 0 o 0.039 0o P032P_B 5/6 STD616A Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2001 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6