TSOP7000ZC1 VISHAY Vishay Semiconductors IR Receiver for High Data Rate PCM at 455 kHz Description The TSOP7000ZC1 is a miniaturized receiver for infrared remote control and IR data transmission. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter. The demodulated output signal can directly be decoded by a microprocessor. The main benefit is the operation with high data rates and long distances. 16668 Features Application Circuit Transmitter TSOPxxxx with TSHFxxxx Circuit • Photo detector and preamplifier in one package • Internal Bandfilter for PCM frequency • Internal shielding against electrical field disturbance • TTL and CMOS compatibility • Output active low • Small size package R1 = 47 Ω VS OUT GND C1 = 4.7 µF R2 >= 1 kΩ +VS µC VO GND Special Features • • • • • Data rate 20 kbit/s Supply voltage 2.7 - 5.5 V Short settling time after power on High envelope duty cycle can be received Enhanced immunity against disturbance from energy saving lamps R1 + C1 recommended to suppress power supply disturbances. R2 optional for improved pulse forming. Block Diagram 3 10 kΩ VS 1 Input AGC Band Pass Demodulator OUT 2 PIN Control Circuit Document Number 82200 Rev. 1, 11-Nov-2002 GND www.vishay.com 1 TSOP7000ZC1 VISHAY Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Symbol Value Unit Supply Voltage Parameter Pin 3 Test condition VS -0.3 to + 6.0 V Voltage at output to supply Pin 1 VS - VO -0.3 to VS + 0.3 V Supply Current Pin 3 IS 5 mA Output Voltage Pin 1 VO -0.3 to + 6.0 V Output Current Pin 1 IO 15 mA Junction Temperature Storage Temperature Range Operating Temperature Range t ≤ 10 s, 1 mm from case Soldering Temperature Power Consumption C 100 °C Tstg - 25 to + 85 °C Tamb - 25 to + 85 °C Tsd 260 °C Ptot 30 mW Electrical and Optical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Supply Current (Pin 3) Typ. Max Unit Dark ambient Test condition ISD 2.0 2.7 mA Ev = 40 klx, sunlight ISH 2.3 Supply Voltage (Pin 3) Symbol VS Min 2.7 5 mA 5.5 V λp= 870 nm, IR Diode TSHF5400, IF = 300 mA dmax 20 m λp= 950 nm, IR Diode TSAL6400, IF = 300 mA dmax 12 m Threshold Irradiance λp = 870 nm, optical test signal of Fig.1 Ee min 0.8 Maximum Irradiance Optical test signal of Fig.1 Ee max Output Voltage Low (Pin 1) 1 kΩ external pull up resistor VQL Output Voltage High (Pin 1) No external pull-up resistor VQH Optical test signal of Fig.1, 1.5 ∆tpo - 15 tdon 15 Transmission Distance Bandpassfilter quality Out-Pulse width tolerance 1.5 mW/m2 30 W/m2 100 mV VS - 0.25 Q V 10 +5 + 15 µs 36 µs mW/m 2 ≤ Ee ≤ 30 W/m2 Delay time of output pulse Optical test signal of Fig.1, Ee > 1.5 mW/m2 Receiver start up time Valid data after power on Falling time Rise time Directivity Document Number 82200 Rev. 1, 11-Nov-2002 tV 50 µs Leading edge of output pulse tf 0.4 µs No external pull up resistor tr 12 µs 1 kΩ external pull up resistor tr 1.2 µs ϕ1/2 ± 45 deg Angle of half transmission distance www.vishay.com 2 TSOP7000ZC1 VISHAY Vishay Semiconductors Optical Test Signal (f=455kHz, 10 cycles/burst) Ee tpi = 22 ∝s 2.2 ∝s > 48.6 ∝s (min. duty cycle) t tdon 16792 Output Signal of TSOP7000 VQ tpo VQH 90% 50% VQL 10% tf tpo = tpi ı 15 ∝s jtdon, jtpo – Jitter of Output Pulse ( m s) Typical Characteristics (Tamb = 25°C unless otherwise specified) 30 N=10 cycles/burst 25 20 Jitter – tpo 15 10 5 Jitter – tdon 0 0.1 t tr 1 1.0 10 100 1000.010000.0 1000 10000 100000.0 100000 10.0 100.0 Ee – Irradiance (mW/m2) 16791 Figure 1. Output Function Figure 4. Jitter of Output Pulse 1.0 (IR diode TSHF5400, p 870 nm, IF = 300 mA, f = 455 kHz, 10 cycles/burst) tpi = 22 ∝s Ee t Output Signal of TSOP7000 tdon 16755 tpo VO VOH Eemin/ Ee – rel. Responsitivity Optical Test Signal VOL jtdon jtpo jitter of leading edge jitter of output pulse width 25 20 Delay time – tdon 15 10 t t don, 5 0 N = 10 cycles/burst 0.1 16790 1.0 1 10.0 10 Figure 3. Output Pulse Diagram (tdon, tpo) Document Number 82200 Rev. 1, 11-Nov-2002 0.6 0.5 0.4 0.3 0.2 0.1 350 400 450 500 550 600 f – Frequency ( kHz ) Figure 5. Frequency Dependence of Responsivity 100.0 100 1000.010000.0 1000 10000 100000.0 100000 Ee – Irradiance (mW/m2) 0.7 16751 E e min – Threshold Irradiance (mW/m2 ) 30 po Output Pulse Length (m s) Output pulse width – tpo 0.8 0.0 300 t Figure 2. Output Fucntion (mit Jitter) 35 0.9 16786 14 12 10 Correlation with ambient light sources (Disturbanceeffect):10W/m2 = 1.4klx (Stand.illum.A,T=2855K) 10W/m2 = 10klx (Daylight,T=5900K) 8 6 4 2 0 0.01 0.10 1.0 10 E – DC Irradiance (W/m2) 100 Figure 6. Sensitivity in Bright Ambient www.vishay.com 3 TSOP7000ZC1 VISHAY 2.0 Sensitivity in dark ambient 1.8 1.2 S ( l ) rel – Relative Spectral Sensitivity E e min – Threshold Irradiance (mW/m2 ) Vishay Semiconductors 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 1.0 0.8 0.6 0.4 0.2 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VS – Supply Voltage ( V ) 16787 0.0 750 800 850 900 950 1000 1050 1100 1150 6.0 Figure 7. Sensitivity vs. Supply Voltage l – Wavelength ( nm ) 16789 Figure 10. Relative Spectral Sensitivity vs. Wavelength 0q E e min – Relative Sensitivity 1.1 10q 20q 30q 1.0 40q 0.9 1.0 0.8 0.9 50q 0.7 0.8 60q 0.6 0.7 70q 80q 0.5 8 10 12 14 16 18 20 22 24 26 28 N – Burstlength (carriercycles/burst) 16788 Figure 8. Rel. Sensitivity vs. Burstlength 0.6 0.4 0.2 0 0.2 0.4 drel – Relative Transmission Distance Figure 11. Directivity Recommendation for Suitable Data Formats 2.3 2.2 Is – Supply Current ( mA ) 0.6 96 12223p2 VS = 5.5V 2.1 VS = 2.7V 2.0 1.9 1.8 The circuit of the TSOP7000ZC1 is designed in that way that disturbance signals are identified and unwated output pulses due to noise or disturbances are avoided. A bandpassfilter, an automatic gain control and an integrator stage is used to suppress such disturbances. The distinguishing marks between data 1.7 1.6 1.5 –25 –15 –5 5 15 25 35 45 55 65 75 85 16754 Tamb – Ambient Temperature ( °C ) Figure 9. Supply Current vs. Ambient Temperature Document Number 82200 Rev. 1, 11-Nov-2002 www.vishay.com 4 VISHAY TSOP7000ZC1 Vishay Semiconductors signal and disturbance are carrier frequency, burst length and the envelope duty cycle. The data signal should fullfill the following conditions: • The carrier frequency should be close to 455 kHz. • The burstlength should be at least 22 µs (10 cycles of the carrier signal) and shorter than 500 µs. • The separation time between two consecutive bursts should be at least 26 µs. • If the data bursts are longer than 500 µs then the envelope duty cycle is limited to 25 % • The duty cycle of the carrier signal (455 kHz) may be between 50 % (1.1 µs pulses) and 10 % (0.2 µs pulses). The lower duty cycle may help to save battery power. Document Number 82200 Rev. 1, 11-Nov-2002 www.vishay.com 5 TSOP7000ZC1 VISHAY Vishay Semiconductors Package Dimensions in mm 16027 Document Number 82200 Rev. 1, 11-Nov-2002 www.vishay.com 6 TSOP7000ZC1 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 82200 Rev. 1, 11-Nov-2002 www.vishay.com 7