ETC 1N5913B/D

1N5913B Series
3 Watt DO-41 Surmetic 30
Zener Voltage Regulators
This is a complete series of 3 Watt Zener diodes with limits and
excellent operating characteristics that reflect the superior capabilities
of silicon–oxide passivated junctions. All this in an axial–lead,
transfer–molded plastic package that offers protection in all common
environmental conditions.
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Specification Features:
•
•
•
•
•
Cathode
Zener Voltage Range – 3.3 V to 200 V
ESD Rating of Class 3 (>16 KV) per Human Body Model
Surge Rating of 98 W @ 1 ms
Maximum Limits Guaranteed on up to Six Electrical Parameters
Package No Larger than the Conventional 1 Watt Package
Mechanical Characteristics:
CASE: Void free, transfer–molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
Anode
AXIAL LEAD
CASE 59
PLASTIC
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16″ from the case for 10 seconds
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
MARKING DIAGRAM
L
1N59
xxB
YYWW
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Max. Steady State Power Dissipation
@ TL = 75°C, Lead Length = 3/8″
Derate above 75°C
PD
3
W
24
mW/°C
Steady State Power Dissipation
@ TA = 50°C
Derate above 50°C
PD
1
W
6.67
mW/°C
–65 to
+200
°C
Operating and Storage
Temperature Range
TJ, Tstg
L
1N59xxB
YY
WW
= Assembly Location
= Device Code
= (See Table Next Page)
= Year
= Work Week
ORDERING INFORMATION
Device
1N59xxB
Package
Shipping
Axial Lead
2000 Units/Box
Axial Lead
6000/Tape & Reel
Axial Lead
2000/Tape & Reel
1N59xxBRR2 Axial Lead
2000/Tape & Reel
1N59xxBRL
1N59xxBRR1
Polarity band up with cathode lead off first
Polarity band down with cathode lead off first
Devices listed in bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.
 Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 1
1
Publication Order Number:
1N5913B/D
1N5913B Series
ELECTRICAL CHARACTERISTICS
I
(TL = 30°C unless otherwise noted,
VF = 1.5 V Max @ IF = 200 mAdc for all types)
IF
Parameter
Symbol
VZ
Reverse Zener Voltage @ IZT
IZT
Reverse Current
ZZT
Maximum Zener Impedance @ IZT
IZK
Reverse Current
ZZK
Maximum Zener Impedance @ IZK
IR
Reverse Leakage Current @ VR
VR
Breakdown Voltage
IF
Forward Current
VF
Forward Voltage @ IF
IZM
Maximum DC Zener Current
VZ VR
V
IR VF
IZT
Zener Voltage Regulator
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2
1N5913B Series
ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted, VF = 1.5 V Max @ IF = 200 mAdc for all types)
Zener Voltage (Note 2.)
VZ (Volts)
Zener Impedance (Note 3.)
Leakage Current
@ IZT
ZZT @ IZT
Max
mA
mA
µA Max
Volts
mA
3.3
4.7
5.6
6.2
6.8
3.47
4.94
5.88
6.51
7.14
113.6
79.8
66.9
60.5
55.1
10
5
2
2
2.5
500
500
250
200
200
1
1
1
1
1
100
5
5
5
5
1
1.5
3
4
5.2
454
319
267
241
220
7.79
8.65
9.50
10.45
11.40
8.2
9.1
10
11
12
8.61
9.56
10.50
11.55
12.60
45.7
41.2
37.5
34.1
31.2
3.5
4
4.5
5.5
6.5
400
500
500
550
550
0.5
0.5
0.25
0.25
0.25
5
5
5
1
1
6.5
7
8
8.4
9.1
182
164
150
136
125
1N5929B
1N5930B
1N5931B
1N5932B
1N5933B
14.25
15.20
17.10
19.00
20.90
15
16
18
20
22
15.75
16.80
18.90
21.00
23.10
25.0
23.4
20.8
18.7
17.0
9
10
12
14
17.5
600
600
650
650
650
0.25
0.25
0.25
0.25
0.25
1
1
1
1
1
11.4
12.2
13.7
15.2
16.7
100
93
83
75
68
1N5934B
1N5935B
1N5936B
1N5937B
1N5938B
1N5934B
1N5935B
1N5936B
1N5937B
1N5938B
22.80
25.65
28.50
31.35
34.20
24
27
30
33
36
25.20
28.35
31.50
34.65
37.80
15.6
13.9
12.5
11.4
10.4
19
23
28
33
38
700
700
750
800
850
0.25
0.25
0.25
0.25
0.25
1
1
1
1
1
18.2
20.6
22.8
25.1
27.4
62
55
50
45
41
1N5940B
1N5941B
1N5942B
1N5943B
1N5944B
1N5940B
1N5941B
1N5942B
1N5943B
1N5944B
40.85
44.65
48.45
53.20
58.90
43
47
51
56
62
45.15
49.35
53.55
58.80
65.10
8.7
8.0
7.3
6.7
6.0
53
67
70
86
100
950
1000
1100
1300
1500
0.25
0.25
0.25
0.25
0.25
1
1
1
1
1
32.7
35.8
38.8
42.6
47.1
34
31
29
26
24
1N5945B
1N5946B
1N5947B
1N5948B
1N5950B
1N5945B
1N5946B
1N5947B
1N5948B
1N5950B
64.60
71.25
77.90
86.45
104.5
68
75
82
91
110
71.40
78.75
86.10
95.55
115.5
5.5
5.0
4.6
4.1
3.4
120
140
160
200
300
1700
2000
2500
3000
4000
0.25
0.25
0.25
0.25
0.25
1
1
1
1
1
51.7
56
62.2
69.2
83.6
22
20
18
16
13
1N5951B
1N5952B
1N5953B
1N5954B
1N5955B
1N5951B
1N5952B
1N5953B
1N5954B
1N5955B
114
123.5
142.5
152
171
120
130
150
160
180
126
136.5
157.5
168
189
3.1
2.9
2.5
2.3
2.1
380
450
600
700
900
4500
5000
6000
6500
7000
0.25
0.25
0.25
0.25
0.25
1
1
1
1
1
91.2
98.8
114
121.6
136.8
12
11
10
9
8
1N5956B
1N5956B
190
200
210
1.9
1200
8000
0.25
1
152
7
Device
(Note 1.)
Device
Marking
Min
Nom
1N5913B
1N5917B
1N5919B
1N5920B
1N5921B
1N5913B
1N5917B
1N5919B
1N5920B
1N5921B
3.14
4.47
5.32
5.89
6.46
1N5923B
1N5924B
1N5925B
1N5926B
1N5927B
1N5923B
1N5924B
1N5925B
1N5926B
1N5927B
1N5929B
1N5930B
1N5931B
1N5932B
1N5933B
ZZK @ IZK
IR @ VR
IZM
1. TOLERANCE AND TYPE NUMBER DESIGNATION
Tolerance designation – device tolerance of ±5% are indicated by a “B” suffix.
2. ZENER VOLTAGE (VZ) MEASUREMENT
ON Semiconductor guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (TL) at 30°C ±1°C,
3/8″ from the diode body.
3. ZENER IMPEDANCE (ZZ) DERIVATION
The zener impedance is derived from 60 seconds AC voltage, which results when an AC current having an rms value equal to 10% of the
DC zener current (IZT or IZK) is superimposed on IZT or IZK.
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3
PD, STEADY STATE DISSIPATION (WATTS)
1N5913B Series
5
L = LEAD LENGTH
TO HEAT SINK
L = 1/8″
4
L = 3/8″
3
2
L = 1″
1
0
0
20
40
60
80 100 120 140 160
TL, LEAD TEMPERATURE (°C)
180
200
Figure 1. Power Temperature Derating Curve
θJL(t, D) TRANSIENT THERMAL RESISTANCE
JUNCTIONTOLEAD (°C/W)
30
20
10
7
5
3
2
1
0.7
0.5
D =0.5
0.2
0.1
t2
DUTY CYCLE, D =t1/t2
0.02
0.01
NOTE: BELOW 0.1 SECOND, THERMAL
RESPONSE CURVE IS APPLICABLE
TO ANY LEAD LENGTH (L).
D=0
0.3
0.0001 0.0002
t1
PPK
0.05
0.0005
0.001
0.002
0.005
0.01
0.02
0.05
t, TIME (SECONDS)
0.1
0.2
SINGLE PULSE ∆TJL = θJL (t)PPK
REPETITIVE PULSES ∆TJL = θJL (t,D)PPK
0.5
1
2
5
10
PPK , PEAK SURGE POWER (WATTS)
1K
IR , REVERSE LEAKAGE (µ Adc) @ VR
AS SPECIFIED IN ELEC. CHAR. TABLE
Figure 2. Typical Thermal Response L, Lead Length = 3/8 Inch
RECTANGULAR
NONREPETITIVE
WAVEFORM
TJ=25°C PRIOR
TO INITIAL PULSE
500
300
200
100
50
30
20
10
0.1
0.2 0.3 0.5
1
2 3
5
10
PW, PULSE WIDTH (ms)
20 30 50
3
2
1
0.5
0.02
0.01
0.005
0.002
0.001
0.0005
0.0003
100
TA = 125°C
0.2
0.1
0.05
TA = 125°C
1
Figure 3. Maximum Surge Power
2
5
10
20
50 100
NOMINAL VZ (VOLTS)
200
400
Figure 4. Typical Reverse Leakage
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4
1000
1N5913B Series
APPLICATION NOTE
∆TJL is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for a train of
power pulses (L = 3/8 inch) or from Figure 10 for dc power.
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, TL, should be determined from:
∆TJL = θJL PD
For worst-case design, using expected limits of IZ, limits
of PD and the extremes of TJ (∆TJ) may be estimated.
Changes in voltage, VZ, can then be found from:
TL = θLA PD + TA
θLA is the lead-to-ambient thermal resistance (°C/W) and PD
is the power dissipation. The value for θLA will vary and
depends on the device mounting method. θLA is generally
30–40°C/W for the various clips and tie points in common
use and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of
pulsed operation once steady-state conditions are achieved.
Using the measured value of TL, the junction temperature
may be determined by:
∆V = θVZ ∆TJ
θVZ, the zener voltage temperature coefficient, is found
from Figures 5 and 6.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 2 should not be used to compute surge
capability. Surge limitations are given in Figure 3. They are
lower than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots resulting in device
degradation should the limits of Figure 3 be exceeded.
TJ = TL + ∆TJL
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5
1N5913B Series
TEMPERATURE COEFFICIENT RANGES
10
1000
8
6
4
RANGE
2
0
-2
-4
θ VZ, TEMPERATURE COEFFICIENT (mV/ °C) @ I ZT
θ VZ, TEMPERATURE COEFFICIENT (mV/ °C) @ I ZT
(90% of the Units are in the Ranges Indicated)
3
4
5
6
7
8
9
10
VZ, ZENER VOLTAGE @ IZT (VOLTS)
11
12
500
200
100
50
20
10
10
20
50
100
200
400
VZ, ZENER VOLTAGE @ IZT (VOLTS)
Figure 5. Units To 12 Volts
1000
Figure 6. Units 10 To 400 Volts
ZENER VOLTAGE versus ZENER CURRENT
100
50
30
20
50
30
20
IZ , ZENER CURRENT (mA)
IZ, ZENER CURRENT (mA)
(Figures 7, 8 and 9)
100
10
5
3
2
1
0.5
0.3
0.2
0.1
0
1
2
3
4
5
6
7
VZ, ZENER VOLTAGE (VOLTS)
8
9
10
5
3
2
1
0.5
0.3
0.2
0.1
10
0
10
20
Figure 7. VZ = 3.3 thru 10 Volts
2
1
0.5
0.2
200
250
300
350
VZ, ZENER VOLTAGE (VOLTS)
400
θJL, JUNCTIONTOLEAD THERMAL RESISTANCE (° C/W)
IZ , ZENER CURRENT (mA)
5
150
80
90
100
Figure 8. VZ = 12 thru 82 Volts
10
0.1
100
30
40
50
60
70
VZ, ZENER VOLTAGE (VOLTS)
80
70
60
50
L
40
30
TL
20
PRIMARY PATH OF
CONDUCTION IS THROUGH
THE CATHODE LEAD
10
0
L
0
Figure 9. VZ = 100 thru 400 Volts
1/8
1/4
3/8
1/2
5/8
3/4
L, LEAD LENGTH TO HEAT SINK (INCH)
7/8
Figure 10. Typical Thermal Resistance
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6
1
1N5913B Series
OUTLINE DIMENSIONS
Zener Voltage Regulators – Axial Leaded
3 Watt DO–41 Surmetic 30
PLASTIC DO–41
CASE 59–03
ISSUE M
B
D
K
NOTES:
1. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO-41 OUTLINE SHALL APPLY.
2. POLARITY DENOTED BY CATHODE BAND.
3. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
DIM
A
B
D
F
K
F
A
MILLIMETERS
MIN
MAX
4.07
5.20
2.04
2.71
0.71
0.86
--1.27
27.94
---
F
K
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7
INCHES
MIN
MAX
0.160
0.205
0.080
0.107
0.028
0.034
--0.050
1.100
---
1N5913B Series
Surmetic is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
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attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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8
1N5913B/D