2N5151SMD05 2N5153SMD05 MECHANICAL DATA Dimensions in mm (inches) 7 .5 4 (0 .2 9 6 ) 0 .7 6 (0 .0 3 0 ) m in . 2 .4 1 (0 .0 9 5 ) 3 .1 7 5 (0 .1 2 5 ) M a x . 2 .4 1 (0 .0 9 5 ) PNP BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH-REL AND SPACE APPLICATIONS ! 0 .7 6 (0 .0 3 0 ) m in . 3 .0 5 (0 .1 2 0 ) 0 .1 2 7 (0 .0 0 5 ) 5 .7 2 (.2 2 5 ) 1 0 .1 6 (0 .4 0 0 ) DESCRIPTION The 2N5151SMD05 and the 2N5153SMD05 are silicon expitaxial planar PNP transistors in a Ceramic Surface Mount Package for use in Switching and Linear applications. 0 .1 2 7 (0 .0 0 5 ) 1 6 P L C S 0 .5 0 (0 .0 2 0 ) 0 .1 2 7 (0 .0 0 5 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) 7 .2 6 (0 .2 8 6 ) The complementary NPN types are the 2N5152SMD05 and 2N5154SMD05 respectively SMD05 Underside View PAD 1 = Base PAD 2 = Collector PAD = 3 – Emitter ABSOLUTE MAXIMUM RATINGS TCASE = 25°c unless otherwise stated VCBO Collector – Base Voltage -100V VCEO Collector – Emitter Voltage (IB = 0) -80V VEBO Emitter – Base Voltage (IC = 0) -5.5V IC Continuous Collector Current -5A IC(PK) Peak Collector Current -10A IB Base Current -2.5A Ptot Total Dissipation at Tamb = 25°C Tcase = 25°C Tstg Operating and Storage Temperature Range Tj Junction temperature 1W 100W –65 to +200°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3310 Issue 1 2N5151SMD05 2N5153SMD05 ELECTRICAL CHARACTERISTICS FOR 2N5151SMD05(Tcase = 25°C unless otherwise stated) Parameter ICES Collector Cut Off Current ICEV Collector Cut Off Current ICEO Collector Cut Off Current IEBO Emitter Cut Off Current VCEO(SUS) Collector Emitter Saturation Voltage VCE(sat) Collector Emitter Saturation Voltage VBE(sat) Base Emitter Saturation Voltage VBE Base Emitter Voltage hFE DC Current Gain Test Conditions Min. Collector Base Capacitance Small Signal Current Gain -1 µA VCE = -100V VBE = 0 -1 mA VCE = -60V Tcase = 150°C Turn On Time toff Turn Off Time -500 VBE = 2V µA VCE = -40V IB = 0 -50 VEB = -4V IC = 0 -1 µA VEB = -5.5V IC = 0 -1 mA IC = -100mA IB = 0 IC = -2.5A IB = -250mA -0.75 IC = -5A IB = -500mA -1.5 IC = -2.5A IB = -250mA -1.45 IC = -5A IB = -500mA -2.2 IC = -2.5A VCE = -5V -1.45 IC = -50mA VCE = -5V 20 IC = -2.5A VCE = -5V 30 IC = -5A VCE = -5v 80 IE = 0 — 20 15 250 f = 1MHz VCE = -5V f = 1KHz IC = -0.5A VCE = -5v IC = -5A VCC = 30v IB1 = -0.5A IC = -5A VCC = 30V IB1=-IB2 = 0.5A V 90 VCB = -10V f = 20MHz ton Unit VBE = 0 IC = -0.1A hFE Max. VCE = -60V Tcase = -55°C IC =2.5A VCE = -5V CCBO Typ. pF 20 — 3 0.5 µs 1.3 µs * Pulse test tp = 300µs , δ < 2% THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.75 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 150 °C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3310 Issue 1 2N5151SMD05 2N5153SMD05 ELECTRICAL CHARACTERISTICS FOR 2N5153SMD05(Tcase = 25°C unless otherwise stated) Parameter ICES Collector Cut Off Current ICEV Collector Cut Off Current ICEO Collector Cut Off Current IEBO Emitter Cut Off Current VCEO(SUS) Collector Emitter Saturation Voltage VCE(sat) Collector Emitter Saturation Voltage VBE(sat) Base Emitter Saturation Voltage VBE Base Emitter Voltage hFE DC Current Gain Test Conditions Min. Collector Base Capacitance Small Signal Current Gain -1 µA VCE = -100V VBE = 0 -1 mA VCE = -60V Tcase = 150°C Turn On Time toff Turn Off Time -500 VBE = 2V µA VCE = -40V IB = 0 -50 VEB = -4V IC = 0 -1 µA VEB = -5.5V IC = 0 -1 mA IC = -100mA IB = 0 IC = -2.5A IB = -250mA -0.75 IC = -5A IB = -500mA -1.5 IC = -2.5A IB = -250mA -1.45 IC = -5A IB = -500mA -2.2 IC = -2.5A VCE = -5V -1.45 IC = -50mA VCE = -5V 50 IC = -2.5A VCE = -5V 70 IC = -5A VCE = -5v 80 IE = 0 — 40 35 250 f = 1MHz VCE = -5V f = 1KHz IC = -0.5A VCE = -5v IC = -5A VCC = 30v IB1 = -0.5A IC = -5A VCC = 30V IB1=-IB2 = 0.5A V 200 VCB = -10V f = 20MHz ton Unit VBE = 0 IC = -0.1A hFE Max. VCE = -60V Tcase = -55°C IC =2.5A VCE = -5V CCBO Typ. pF 20 — 3 0.5 µs 1.3 µs * Pulse test tp = 300µs , δ < 2% THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.75 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 150 °C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3310 Issue 1