ETC 2SA0684Q

Transistor
2SA0683, 2SA0684 (2SA683, 2SA684)
Silicon PNP epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SC1383 and 2SC1384
Unit: mm
5.9±0.2
4.9±0.2
Complementary pair with 2SC1383 and 2SC1384.
Allowing supply with the radial taping.
Parameter
2SA0683
base voltage
2SA0684
Collector to
2SA0683
Ratings
Unit
–30
VCBO
–25
V
–50
+0.2
VEBO
–5
V
Peak collector current
ICP
–1.5
A
Collector current
IC
–1
A
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
Symbol
ICBO
Collector to base
2SA0683
voltage
2SA0684
Collector to emitter
2SA0683
voltage
2SA0684
Emitter to base voltage
1.27
1
Conditions
2
min
3
typ
VCB = –20V, IE = 0
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
IC = –10µA, IE = 0
VCEO
IC = –2mA, IB = 0
VEBO
IE = –10µA, IC = 0
–5
VCE = –10V, IC = –500mA
85
VCE = –5V, IC = –1A
50
*
hFE2
max
Unit
– 0.1
µA
–30
VCBO
hFE1
Forward current transfer ratio
0.45–0.1
1.27
(Ta=25˚C)
Parameter
Collector cutoff current
+0.2
0.45–0.1
Emitter to base voltage
■ Electrical Characteristics
2.54±0.15
V
–60
VCEO
emitter voltage 2SA0684
+0.3
(Ta=25˚C)
Symbol
Collector to
0.7–0.2
0.7±0.1
■ Absolute Maximum Ratings
13.5±0.5
●
3.2
●
8.6±0.2
■ Features
V
–60
–25
V
–50
V
340
Collector to emitter saturation voltage
VCE(sat)
IC = –500mA, IB = –50mA
– 0.2
– 0.4
V
Base to emitter saturation voltage
VBE(sat)
IC = –500mA, IB = –50mA
– 0.85
–1.2
V
Transition frequency
fT
VCB = –10V, IE = 50mA, f = 200MHz
200
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
20
*h
FE1
MHz
30
pF
Rank classification
Rank
Q
R
S
hFE1
85 ~ 170
120 ~ 240
170 ~ 340
Note.) The Part numbers in the Parenthesis show conventional part number.
1
Transistor
2SA0683, 2SA0684
PC — Ta
IC — VCE
1.2
IC — IB
–1.5
–1.2
–1.25
0.8
0.6
IB=–10mA
–9mA
–8mA
–1
–7mA
–6mA
– 0.75
0.4
–5mA
–4mA
– 0.5
0.2
–3mA
–2mA
– 0.25
0
–1mA
– 0.6
– 0.4
– 0.2
60
80 100 120 140 160
0
0
–30
–10
–3
–1
Ta=75˚C
–8
–10
–25˚C
–100
IC/IB=10
–30
Ta=–25˚C
–1
25˚C
–3
–10
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
Collector output capacitance Cob (pF)
120
100
80
60
40
20
0
1
3
10
Ta=75˚C
25˚C
–25˚C
–1
–3
0
– 0.01 – 0.03 – 0.1 – 0.3
–10
30
Emitter current IE (mA)
100
–3
–10
VCER — RBE
–120
IE=0
f=1MHz
Ta=25˚C
45
40
35
30
25
20
15
10
5
0
–1
–1
Collector current IC (A)
Cob — VCB
140
–12
–100
50
160
–10
VCE=–10V
Collector current IC (A)
VCB=–10V
Ta=25˚C
–8
–600
–200
fT — IE
180
–6
–300
75˚C
Collector current IC (A)
200
–4
Base current IB (mA)
–400
–3
– 0.03
–1
–2
–500
–10
– 0.1
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
0
hFE — IC
– 0.3
25˚C
– 0.1
–6
VBE(sat) — IC
IC/IB=10
– 0.3
–4
Collector to emitter voltage VCE (V)
Base to emitter saturation voltage VBE(sat) (V)
–100
–2
Forward current transfer ratio hFE
40
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
– 0.8
–3
–10
–30
–100
Collector to base voltage VCB (V)
Collector to emitter voltage VCER (V)
20
Ambient temperature Ta (˚C)
Transition frequency fT (MHz)
–1.0
0
0
2
VCE=–10V
Ta=25˚C
Collector current IC (mA)
1.0
Collector current IC (A)
Collector power dissipation PC (W)
Ta=25˚C
IC=–10mA
Ta=25˚C
–100
–80
–60
2SA0684
–40
2SA0683
–20
0
0.1
0.3
1
3
10
30
100
Base to emitter resistance RBE (kΩ)
Transistor
2SA0683, 2SA0684
ICEO — Ta
104
Area of safe operation (ASO)
–10
VCE=–10V
Single pulse
Ta=25˚C
–3
Collector current IC (A)
ICP
–1
t=10ms
IC
– 0.3
102
t=1s
– 0.1
10
– 0.01
– 0.003
1
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
– 0.001
– 0.1 – 0.3
–1
–3
–10
2SA0684
– 0.03
2SA0683
ICEO (Ta)
ICEO (Ta=25˚C)
103
–30
–100
Collector to emitter voltage VCE (V)
3
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2001 MAR