Transistor 2SA0921 (2SA921) Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage VCEO –120 V Emitter to base voltage VEBO –5 V Peak collector current ICP –50 mA Collector current IC –20 mA Collector power dissipation PC 250 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.2 +0.2 0.45 –0.1 0.45 –0.1 1.27 1.27 2.3±0.2 ● 13.5±0.5 ● 5.1±0.2 ■ Features 4.0±0.2 1 2 3 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A (Ta=25˚C) Symbol Parameter Conditions min typ max Unit ICBO VCB = –50V, IE = 0 –100 nA ICEO VCE = –50V, IB = 0 –1 µA Collector to base voltage VCBO IC = –10µA, IE = 0 –120 V Collector to emitter voltage VCEO IC = –1mA, IB = 0 –120 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 Forward current transfer ratio hFE* VCE = –5V, IC = –2mA 180 Collector to emitter saturation voltage VCE(sat) IC = –20mA, IB = –2mA Transition frequency fT VCB = –5V, IE = 2mA, f = 200MHz Noise voltage NV Collector cutoff current *h FE VCE = –40V, IC = –1mA, GV = 80dB Rg = 100kΩ, Function FLAT V 520 – 0.6 200 V MHz 150 mV Rank classification Rank R S hFE 180 ~ 360 260 ~ 520 Note.) The Part number in the Parenthesis shows conventional part number. 1 2SA0921 Transistor PC — Ta IC — VCE –60 IB=–50µA 350 300 250 200 150 100 –45µA –40µA –16 –35µA –30µA –12 –25µA –20µA –8 –15µA –10µA –4 25˚C Ta=75˚C –40 –25˚C –30 –20 –10 –5µA 50 0 80 120 160 200 0 0 –2 –10 –3 –1 Ta=75˚C – 0.1 –25˚C – 0.03 –3 –10 –30 700 600 500 Ta=75˚C 25˚C 400 –25˚C 300 200 –1 –3 –10 –30 –100 Noise voltage NV (mV) 100 6 5 4 3 2 VCE=–10V GV=80dB Function=FLAT Rg=100kΩ 80 60 22kΩ 40 4.7kΩ 20 1 –10 –30 –100 Collector to base voltage VCB (V) –2.0 280 240 200 160 120 80 0 – 0.01 – 0.03 – 0.1 – 0.3 Collector current IC (mA) 0 0.1 0.3 1 3 10 30 Emitter current IE (mA) NV — IC IE=0 f=1MHz Ta=25˚C –1.6 40 100 120 7 –1.2 VCB=–5V Ta=25˚C Collector current IC (mA) 8 – 0.8 fT — IE 800 Cob — VCB –3 – 0.4 Base to emitter voltage VBE (V) 320 0 – 0.1 – 0.3 –100 10 0 –1 0 900 Collector current IC (mA) 9 –12 VCE=–5V Forward current transfer ratio hFE –30 –1 –10 1000 IC/IB=10 – 0.01 – 0.1 – 0.3 –8 hFE — IC –100 25˚C –6 Collector to emitter voltage VCE (V) VCE(sat) — IC – 0.3 –4 Transition frequency fT (MHz) 40 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) –50 Collector current IC (mA) –20 400 0 Collector output capacitance Cob (pF) VCE=–5V Ta=25˚C 450 0 2 IC — VBE –24 Collector current IC (mA) Collector power dissipation PC (mW) 500 –1 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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