Transistor 2SA1619, 2SA1619A Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC4208 and 2SC4208A Unit: mm 5.0±0.2 Complementary pair with 2SC4208 and 2SC4208A. Allowing supply with the radial taping and automatic insertion possible. ■ Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Collector to 2SA1619 base voltage 2SA1619A Collector to 2SA1619 Ratings –30 VCBO –60 8.0±0.2 ● 0.7±0.2 ● 0.7±0.1 13.5±0.5 ■ 4.0±0.2 Features Unit V +0.15 VCEO emitter voltage 2SA1619A –50 V 1.27 1.27 Emitter to base voltage VEBO –5 V Peak collector current ICP –1 A 1 2 3 2.54±0.15 Collector current IC – 0.5 A Collector power dissipation PC 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics Symbol Collector to base 2SA1619 voltage 2SA1619A Collector to emitter 2SA1619 voltage 2SA1619A Emitter to base voltage Forward current transfer ratio 0.45 –0.1 1:Emitter 2:Collector 3:Base TO–92NL Package (Ta=25˚C) Parameter Collector cutoff current +0.15 0.45 –0.1 2.3±0.2 –25 Conditions ICBO VCB = –20V, IE = 0 VCBO IC = –10µA, IE = 0 VCEO IC = –10mA, IB = 0 min typ max Unit – 0.1 µA –30 V –60 –25 V –50 VEBO IE = –10µA, IC = 0 –5 hFE1* VCE = –10V, IC = –150mA 85 40 V 160 340 hFE2 VCE = –10V, IC = –500mA Collector to emitter saturation voltage VCE(sat) IC = –300mA, IB = –30mA – 0.35 – 0.6 Base to emitter saturation voltage VBE(sat) IC = –300mA, IB = –30mA –1.1 –1.5 Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz 200 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz *h FE1 6 V V MHz 15 pF Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 1 Transistor 2SA1619, 2SA1619A PC — Ta IC — VCE Ta=25˚C IB=–10mA –9mA –8mA –7mA –6mA –5mA –600 –500 0.6 –400 –3mA –2mA –200 –1mA –300 –200 0.2 –100 –100 0 60 80 100 120 140 160 0 0 –16 –20 –10 –3 –1 Ta=75˚C –25˚C –30 –10 –3 Ta=–25˚C –1 25˚C 75˚C – 0.1 – 0.03 – 0.03 –1 –3 –10 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 Collector current IC (A) fT — IE Collector output capacitance Cob (pF) VCB=–10V Ta=25˚C 200 160 120 80 40 0 3 10 –1 –3 30 Emitter current IE (mA) 100 –10 400 300 Ta=75˚C 25˚C –25˚C 200 100 –1 –3 –10 Collector current IC (A) VCER — RBE 16 12 8 4 0 –1 –8 500 0 – 0.01 – 0.03 – 0.1 – 0.3 –10 IE=0 f=1MHz Ta=25˚C 20 –6 VCE=–10V Cob — VCB 24 –4 600 Collector current IC (A) 240 1 –2 Base current IB (mA) IC/IB=10 – 0.3 25˚C – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 0 hFE — IC –100 Base to emitter saturation voltage VBE(sat) (V) –30 – 0.1 –12 VBE(sat) — IC IC/IB=10 – 0.3 –8 Collector to emitter voltage VCE (V) VCE(sat) — IC –100 –4 Forward current transfer ratio hFE 40 –120 Collector to emitter voltage VCER (V) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) –500 –300 0 Transition frequency fT (MHz) –600 –4mA –400 0.4 VCE=–10V Ta=25˚C –700 1.0 0.8 –800 Collector current IC (mA) –700 0 2 IC — IB –800 Collector current IC (A) Collector power dissipation PC (W) 1.2 IC=–2mA Ta=25˚C –100 –80 –60 2SA1619A –40 2SA1619 –20 0 –3 –10 –30 –100 Collector to base voltage VCB (V) 1 3 10 30 100 300 1000 Base to emitter resistance RBE (kΩ) Transistor 2SA1619, 2SA1619A ICEO — Ta 104 Area of safe operation (ASO) –10 VCE=–10V Single pulse Ta=25˚C Collector current IC (mA) –3 ICEO (Ta) ICEO (Ta=25˚C) 103 ICP IC –1 t=10ms t=1s – 0.3 102 – 0.1 – 0.03 10 – 0.01 – 0.003 1 0 40 80 120 160 200 Ambient temperature Ta (˚C) – 0.001 – 0.1 – 0.3 –1 –3 –10 –30 –100 Collector to emitter voltage VCE (V) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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