Transistor 2SB0642 (2SB642) Silicon PNP epitaxial planer type For low-power general amplification Unit: mm 6.9±0.1 1.0 0.85 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –7 V Peak collector current ICP –200 mA Collector current IC –100 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 4.5±0.1 0.55±0.1 Parameter 3 0.45±0.05 2 2.5 1:Base 2:Collector 3:Emitter 1 1.25±0.05 ■ Absolute Maximum Ratings 4.1±0.2 7 0. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0 R ● 1.0±0.1 ● 0.4 ■ Features 2.5±0.1 1.5 R0.9 R0.9 2.4±0.2 2.0±0.2 3.5±0.1 1.5 2.5 EIAJ:SC–71 M Type Mold Package (Ta=25˚C) Parameter Symbol Conditions min typ max Unit ICBO VCB = –20V, IE = 0 –1 nA ICEO VCE = –20V, IB = 0 –1 µA Collector to base voltage VCBO IC = –10µA, IE = 0 –60 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –50 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 Forward current transfer ratio hFE* VCE = –10V, IC = –2mA 160 Collector to emitter saturation voltage VCE(sat) IC = –100mA, IB = –10mA Transition frequency fT VCB = –10V, IE = 2mA, f = 200MHz 80 MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 3.5 pF Collector cutoff current *h FE V 460 –1 V Rank classification Rank Q R S hFE 160 ~ 260 210 ~ 340 290 ~ 460 Note.) The Part number in the Parenthesis shows conventional part number. 1 Transistor 2SB0642 PC — Ta IC — VCE IC — I B –60 –60 Ta=25˚C 450 300 250 200 150 100 –50 Collector current IC (mA) 350 –250µA –40 –200µA –30 –150µA –20 –100µA –10 –30 –20 –10 –50µA 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) –4 –8 –12 –16 –20 0 Collector to emitter voltage VCE (V) IB — VBE –150 IC — VBE –400 VCE=–5V –350 25˚C Collector current IC (mA) –200 Base current IB (µA) –300 Ta=75˚C –25˚C –160 –250 –150 –100 –10 IC/IB=10 –3 –1 Ta=75˚C 25˚C – 0.3 –120 –200 –450 VCE(sat) — IC –240 VCE=–5V Ta=25˚C –300 Base current IB (µA) Collector to emitter saturation voltage VCE(sat) (V) 0 –25˚C – 0.1 – 0.03 –80 – 0.01 –40 –50 – 0.003 0 0 0 – 0.6 –1.2 –1.8 0 Base to emitter voltage VBE (V) – 0.4 – 0.8 –1.2 –1.6 –2.0 hFE — IC fT — I E Ta=75˚C 300 25˚C –25˚C 200 100 140 120 100 80 60 40 20 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) –30 –100 –300 –1000 Cob — VCB Collector output capacitance Cob (pF) 400 –10 8 VCB=–10V Ta=25˚C Transition frequency fT (MHz) 500 –3 Collector current IC (mA) 160 VCE=–10V 0 –1 – 0.001 –1 Base to emitter voltage VBE (V) 600 Forward current transfer ratio hFE –40 50 0 2 VCE=–5V Ta=25˚C IB=–300µA –50 400 Collector current IC (mA) Collector power dissipation PC (mW) 500 0 0.1 0.3 1 3 10 30 Emitter current IE (mA) 100 IE=0 f=1MHz Ta=25˚C 7 6 5 4 3 2 1 0 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Transistor 2SB0642 NF — IE IC=–1mA f=10.7MHz Ta=25˚C 20 VCB=–5V f=1kHz Rg=2kΩ Ta=25˚C 5 4 3 2 1 VCB=–5V Rg=50kΩ Ta=25˚C 18 16 Noise figure NF (dB) 5 NF — IE 6 Noise figure NF (dB) Common emitter reverse transfer capacitance Cre (pF) Cre — VCE 6 4 3 2 14 12 f=100Hz 10 1kHz 8 10kHz 6 4 1 2 0 0 –5 –10 –15 –20 –25 0 0.01 0.03 –30 Collector to emitter voltage VCE (V) 0.1 0.3 1 3 0 0.1 10 Emitter current IE (mA) h Parameter — IE 0.3 1 3 10 Emitter current IE (mA) h Parameter — VCE ICBO — Ta 100 300 300 hfe hfe 100 hoe (µS) 30 10 30 hoe (µS) 10 hie (kΩ) 3 1 0.1 3 1 3 Emitter current IE (mA) 10 10 3 hre (✕10–4) hie (kΩ) VCE=–5V f=270Hz Ta=25˚C hre (✕10–4) 0.3 30 ICBO (Ta) ICBO (Ta=25˚C) h Parameter h Parameter 100 VCB=–10V IE=2mA f=270Hz Ta=25˚C 1 –1 1 –3 –10 –30 –100 Collector to emitter voltage VCE (V) 0 25 50 75 100 125 150 Ambient temperature Ta (˚C) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR