Transistor 2SB0774 (2SB774) Silicon PNP epitaxial planer type For low-frequency amplification Unit: mm 5.0±0.2 High emitter to base voltage VEBO. Protective diodes and resistances between emitter and base can be omitted. ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage VCEO –25 V Emitter to base voltage VEBO –15 V Peak collector current ICP –200 mA Collector current IC –100 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.2 0.45 –0.1 1.27 1.27 1 2 3 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A (Ta=25˚C) Parameter Symbol ICBO Collector cutoff current +0.2 0.45 –0.1 2.3±0.2 ● 13.5±0.5 ● 4.0±0.2 5.1±0.2 ■ Features Conditions min typ VCB = –10V, IE = 0 max Unit –1 µA –100 µA ICEO VCE = –20V, IB = 0 Collector to base voltage VCBO IC = –10µA, IE = 0 –30 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –25 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –15 V VCE = –10V, IC = –2mA 210 VCE = –2V, IC = –100mA 90 hFE1 Forward current transfer ratio * hFE2 Collector to emitter saturation voltage VCE(sat) IC = –100mA, IB = –10mA Transition frequency fT VCB = –10V, IE = 2mA, f = 200MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz *h FE1 460 –0.5 V 150 MHz 4 pF Rank classification Rank R S hFE1 210 ~ 340 290 ~ 460 Note.) The Part number in the Parenthesis shows conventional part number. 1 2SB0774 Transistor PC — Ta IC — VCE –200 Ta=25˚C 350 200 150 100 –1.0mA – 0.6mA – 0.4mA –80 – 0.2mA –40 –140 –120 25˚C –100 Ta=75˚C –25˚C –80 –60 –40 –20 0 40 60 80 100 120 140 160 0 0 –2 –10 –3 –1 – 0.3 Ta=75˚C 25˚C –25˚C –3 –10 –30 –100 Collector current IC (mA) IE=0 f=1MHz Ta=25˚C 10 8 6 4 2 0 –1 –3 –10 0 – 0.4 –30 –100 Collector to base voltage VCB (V) – 0.8 –1.2 –1.6 1000 500 400 Ta=75˚C 25˚C 300 –25˚C 200 100 0 – 0.1 – 0.3 –1 –3 –2.0 Base to emitter voltage VBE (V) fT — I E –10 –30 Collector current IC (mA) Cob — VCB 12 –12 VCB=–10V Ta=25˚C VCE=–10V Forward current transfer ratio hFE –30 –1 –10 600 IC/IB=10 – 0.01 – 0.1 – 0.3 –8 hFE — IC –100 – 0.03 –6 Collector to emitter voltage VCE (V) VCE(sat) — IC – 0.1 –4 Transition frequency fT (MHz) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) –160 50 0 Collector output capacitance Cob (pF) –1.4mA – 0.8mA –120 250 –180 –1.2mA –160 300 –1.6mA Collector current IC (mA) –200 400 VCE=–10V IB=–1.8mA 450 0 2 IC — VBE –240 Collector current IC (mA) Collector power dissipation PC (mW) 500 –100 300 100 30 10 0.1 0.3 1 3 10 30 Emitter current IE (mA) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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