Power Transistors 2SB1362 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2053 Unit: mm 15.0±0.5 Ratings Unit Collector to base voltage VCBO –150 V Collector to emitter voltage VCEO –150 V Emitter to base voltage VEBO –5 V Peak collector current ICP –15 A Collector current IC –9 A dissipation PC Ta=25°C Junction temperature Tj Storage temperature Tstg 2.5 ■ Electrical Characteristics 4.0±0.1 15.0±0.2 2.0±0.1 φ3.2±0.1 2.0±0.2 Solder Dip Symbol 100 20.0±0.3 (TC=25˚C) Parameter Collector power TC=25°C 19.0±0.3 ■ Absolute Maximum Ratings 10.5±0.5 3.5 ● 16.2±0.5 ● Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT 12.5 ● 4.5±0.2 13.0±0.5 4.0±0.1 ■ Features ˚C –55 to +150 ˚C 0.6±0.2 5.45±0.3 10.9±0.5 1 2 3 1:Base 2:Collector 3:Emitter EIAJ:SC–65(a) TOP–3 Package(a) W 150 1.4±0.3 1.1±0.1 (TC=25˚C) Parameter Conditions Symbol min typ max Unit Collector cutoff current ICBO VCB = –150V, IE = 0 –50 µA Emitter cutoff current IEBO VEB = –3V, IC = 0 –50 µA hFE1 VCE = –5V, IC = –20mA 20 hFE2* VCE = –5V, IC = –1A 60 20 Forward current transfer ratio 200 hFE3 VCE = –5V, IC = –7A Base to emitter voltage VBE VCE = –5V, IC = –7A Collector to emitter saturation voltage VCE(sat) IC = –7A, IB = – 0.7A Transition frequency fT VCE = –5V, IC = – 0.5A, f = 1MHz 15 MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 270 pF *h FE2 –1.8 –2.0 V V Rank classification Rank Q S P hFE2 60 to 120 80 to 160 100 to 200 1 Power Transistors 2SB1362 PC — Ta IC — VCE 100 80 60 (1) 40 –12 TC=25˚C –10 20 VCE=–5V IB=–300mA –10 –200mA –8 –150mA –100mA –80mA –6 –60mA –4 –40mA –20mA –2 (2) Collector current IC (A) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3 )Without heat sink (PC=2.5W) IC — VBE –12 Collector current IC (A) Collector power dissipation PC (W) 120 25˚C TC=–25˚C –8 100˚C –6 –4 –2 –10mA (3) 0 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) –2 –3 TC=100˚C 25˚C –25˚C – 0.1 – 0.03 –1 –3 –10 –30 300 25˚C 100 –25˚C 30 10 3 1 – 0.1 – 0.3 –100 –1 –3 –10 –30 –100 Collector current IC (A) Cob — VCB Area of safe operation (ASO) –100 10000 IE=0 f=1MHz TC=25˚C Collector current IC (A) –30 1000 300 Non repetitive pulse TC=25˚C ICP t=10ms –10 –3 IC 100ms –1 DC – 0.3 100 – 0.1 30 – 0.03 10 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) – 0.01 –1 –3 –10 –30 –1 –2 –3 Base to emitter voltage VBE (V) fT — IC TC=100˚C Collector current IC (A) 3000 0 1000 Transition frequency fT (MHz) –10 – 0.01 – 0.1 – 0.3 –12 VCE=–5V IC/IB=10 –30 –1 –10 hFE — IC Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) –8 1000 – 0.3 Collector output capacitance Cob (pF) –6 Collector to emitter voltage VCE (V) VCE(sat) — IC –100 2 –4 –100 –300 –1000 Collector to emitter voltage VCE (V) VCE=–5V f=1MHz TC=25˚C 300 100 30 10 3 1 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 Collector current IC (A) –10 Power Transistors 2SB1362 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 1000 100 (1) 10 (2) 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3