ETC 2SB1378Q

Transistor
2SB1378
Silicon PNP epitaxial planer type
For low-frequency power amplification
Complementary to 2SD1996
Unit: mm
0.15
1.0
14.5±0.5
+0.1
(Ta=25˚C)
0.45–0.05
2.5±0.5
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–25
V
Collector to emitter voltage
VCEO
–20
V
Emitter to base voltage
VEBO
–7
V
Peak collector current
ICP
–1
A
Collector current
IC
– 0.5
A
Collector power dissipation
PC
600
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
2.5±0.5
1
2
3
2.5±0.1
■ Absolute Maximum Ratings
0.65 max.
0.85
●
Low collector to emitter saturation voltage VCE(sat).
Optimum for low-voltage operation and for converters.
Allowing supply with the radial taping.
+0.1
●
0.45–0.05
●
0.8
■ Features
1.05 2.5±0.1
(1.45)
±0.05
0.8
4.0
3.5±0.1
6.9±0.1
0.7
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT1 Type Package
1.2±0.1
0.65
max.
0.45+–0.1
0.05
(HW type)
■ Electrical Characteristics
(Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
ICBO
VCB = –25V, IE = 0
–100
nA
ICEO
VCE = –20V, IB = 0
–1
µA
Collector to base voltage
VCBO
IC = –10µA, IE = 0
–25
V
Collector to emitter voltage
VCEO
IC = –1mA, IB = 0
–20
V
Emitter to base voltage
VEBO
IE = –10µA, IC = 0
–7
hFE1*1
VCE = –2V, IC = –0.5A*2
90
hFE2
VCE = –2V, IC = –1A*2
25
VCE(sat)
IC = –500mA, IB = –50mA*2
Base to emitter saturation voltage
VBE(sat)
IC = –500mA, IB =
–50mA*2
Transition frequency
fT
VCB = –10V, IE = 50mA, f = 200MHz
150
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
15
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
V
350
– 0.4
–1.2
FE1
V
MHz
25
*2
*1h
V
pF
Pulse measurement
Rank classification
Rank
Q
R
S
hFE1
90 ~ 155
130 ~ 220
180 ~ 350
1
Transistor
2SB1378
PC — Ta
IC — VCE
700
–1.0
–9mA
–8mA
–7mA
600
– 0.8
500
–6mA
–5mA
– 0.6
400
300
–4mA
–3mA
– 0.4
200
–2mA
100
–30
–10
–3
–1
Ta=75˚C
25˚C
– 0.3
–25˚C
– 0.03
0
40
60
80 100 120 140 160
0
–1
–10
–3
Ta=–25˚C
75˚C
– 0.3
– 0.1
– 0.03
–1
–3
–10
Collector current IC (A)
Cob — VCB
IE=0
f=1MHz
Ta=25˚C
60
50
40
30
20
10
–3
–10
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
–30
–100
Collector to base voltage VCB (V)
–3
–10
320
VCB=–10V
Ta=25˚C
500
400
300
–1
Collector current IC (A)
fT — I E
Ta=75˚C
25˚C
200
–25˚C
100
280
240
200
160
120
80
40
0
– 0.01 – 0.03 – 0.1 – 0.3
0
–1
–3
Collector current IC (A)
80
0
–1
–6
VCE=–2V
Forward current transfer ratio hFE
–30
70
–5
600
IC/IB=10
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
–4
hFE — IC
–100
–1
–3
Collector to emitter voltage VCE (V)
VBE(sat) — IC
25˚C
–2
Transition frequency fT (MHz)
20
Ambient temperature Ta (˚C)
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=10
– 0.1
–1mA
– 0.2
0
Collector output capacitance Cob (pF)
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C
IB=–10mA
0
2
VCE(sat) — IC
–100
–1.2
Collector current IC (mA)
Collector power dissipation PC (mW)
800
–10
1
3
10
30
100
300
Emitter current IE (mA)
1000
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2001 MAR