Transistor 2SB1473 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to2SD2225 Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 0.7 4.0 0.8 ● 0.2 0.65 max. 14.5±0.5 ● High collector to emitter voltage VCEO. Satisfactory linearity of forward current transfer ratio hFE. High transition frequency fT. Allowing supply with the radial taping. 1.0 1.0 ● 0.5 4.5±0.1 ■ Features ● (1.45) +0.1 (Ta=25˚C) 2.5±0.5 * Parameter Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage VCEO –120 V Emitter to base voltage VEBO –5 V Peak collector current ICP –1 A Collector current IC – 0.5 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 2.5±0.5 2 3 2.5±0.1 1 +0.1 ■ Absolute Maximum Ratings 0.45–0.05 0.45–0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion 1:Emitter 2:Collector 3:Base MT2 Type Package 1.2±0.1 0.65 max. 0.45+–0.1 0.05 (HW type) ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector to emitter voltage VCEO IC = –0.1mA, IB = 0 –120 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 V hFE1 *1 VCE = –10V, IC = –150mA 90 hFE2 VCE = –5V, IC = –500mA*2 50 Collector to emitter saturation voltage VCE(sat) IC = –300mA, IB = –30mA*2 –1.0 V Base to emitter saturation voltage VBE(sat) IC = –300mA, IB = –30mA*2 –1.2 V Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz Forward current transfer ratio 330 250 MHz 30 *2 *1h FE1 pF Pulse measurement Rank classification Rank Q R S hFE1 90 ~ 155 130 ~ 220 185 ~ 330 1 2SB1473 Transistor PC — Ta IC — VCE 1.0 0.8 Ta=25˚C IB=–10mA 0.6 –7mA –6mA –5mA – 0.6 0.4 –4mA – 0.4 0.2 –3mA –2mA – 0.2 –1mA VCE=–10V 0 80 120 160 200 0 –4 –6 –8 –30 –10 –3 Ta=–25˚C 25˚C 75˚C – 0.3 –100 Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 – 0.1 – 0.03 –1 –3 –10 Collector current IC (A) –30 –10 –3 –1 Ta=75˚C 25˚C –25˚C 200 Ta=100˚C 150 100 25˚C –25˚C 50 50 IE=0 f=1MHz Ta=25˚C 40 35 30 25 20 15 10 5 0 30 100 Collector to base voltage VCB (V) –1 –3 –10 320 VCB=–10V Ta=25˚C 280 240 200 160 120 80 40 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 0 –1 –3 Collector current IC (A) Cob — VCB 10 250 Collector current IC (A) IC/IB=10 – 0.03 3 300 fT — I E – 0.1 1 350 0 – 0.01 – 0.03 – 0.1 – 0.3 –10 – 0.3 45 400 VCE(sat) — IC –100 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 450 Collector to emitter voltage VCE (V) VBE(sat) — IC –1 –2 Transition frequency fT (MHz) 40 Ambient temperature Ta (˚C) Base to emitter saturation voltage VBE(sat) (V) –9mA –8mA –1.0 – 0.8 0 Collector output capacitance Cob (pF) 500 Forward current transfer ratio hFE Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 2 hFE — IC –1.2 Collector current IC (A) Collector power dissipation PC (W) 1.2 –10 1 3 10 30 Emitter current IE (mA) 100