Power Transistors 2SB1548, 2SB1548A Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2374 and 2SD2374A 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 ■ Features ■ Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage 2SB1548 Collector to emitter voltage 2SB1548 Symbol Rating Unit VCBO −60 V 15.0±0.5 1.4±0.2 1.6±0.2 −60 VCEO V VEBO −5 V Peak collector current ICP −5 A Collector current IC −3 A PC 25 W TC = 25°C Ta = 25°C 0.55±0.15 2.54±0.30 5.08±0.50 1 2 3 1 : Base 2 : Collector 3 : Emitter TO-220D Package −80 2SB1548A 2.6±0.1 0.8±0.1 −80 2SB1548A Emitter to base voltage Collector power dissipation φ 3.2±0.1 13.7±0.2 4.2±0.2 Solder Dip • High forward current transfer ratio hFE which has satisfactory linearity • Low collector to emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw 2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ■ Electrical Characteristics TC = 25°C Parameter Symbol Collector cutoff current 2SB1548 Collector cutoff current 2SB1548 ICEO 2SB1548A Emitter cutoff current Collector to emitter voltage ICES 2SB1548A 2SB1548 Conditions Max Unit VCE = −60 V, VBE = 0 −200 µA VCE = −80 V, VBE = 0 −200 VCE = −30 V, IB = 0 −300 VCE = −60 V, IB = 0 −300 IEBO VEB = −5 V, IC = 0 VCEO IC = −30 mA, IB = 0 hFE1 * VCE = −4 V, IC = −1 A 70 Base to emitter voltage hFE2 VCE = −4 V, IC = −3 A 10 VBE VCE = −4 V, IC = −3 A Collector to emitter saturation voltage Typ −1 −60 µA mA V −80 2SB1548A Forward current transfer ratio Min VCE(sat) 250 −1.8 IC = −3 A, IB = − 0.375 A −1.2 V V fT VCE = −10 V, IC = − 0.5 A, f = 10 MHz Turn-on time ton IC = −1 A, IB1 = − 0.1 A, IB2 = 0.1 A Storage time tstg Fall time tf 0.3 µs Transition frequency 30 MHz 0.5 µs 1.2 µs Note) *: Rank classification Rank Q P hFE1 70 to 150 120 to 250 Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank classification. 1 2SB1548, 2SB1548A Power Transistors PC T a IC VCE –8 –7 28 (1) 24 20 16 12 8 IB=–100mA –4 –80mA –60mA –3 –40mA –30mA –2 –20mA –16mA –12mA –1 –5 –4 –3 –2 –1 –4mA 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) –2 –4 –6 –8 –10 –12 0 Collector to emitter voltage VCE (V) VCE(sat) IC hFE IC fT I C VCE=–4V TC=25˚C 3000 1000 –1 – 0.1 – 0.03 – 0.01 – 0.003 – 0.001 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 300 100 30 10 Collector current IC (A) –1 –3 –3 ICP t=1ms IC 10ms DC –1 – 0.3 – 0.1 – 0.03 – 0.01 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) 10 3 1 0.1 – 0.01 – 0.03 – 0.1 – 0.3 –10 –1 –3 Collector current IC (A) Rth(t) t 103 Thermal resistance Rth(t) (˚C/W) –10 30 0.3 Area of safe operation (ASO) –30 100 Collector current IC (A) –100 Non repetitive pulse TC=25˚C VCE=–10V f=10MHz TC=25˚C 300 3 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 (1) Without heat sink (2) With a 100 × 80 × t2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 –1.2 1000 Transition frequency fT (MHz) Forward current transfer ratio hFE IC/IB=10 TC=25˚C –3 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 Base to emitter voltage VBE (V) 10000 –10 – 0.3 Collector current IC (A) –6 –8mA (2) 0 2 Collector current IC (A) –5 32 4 VCE=–4V TC=25˚C TC=25˚C (1) TC=Ta (2) Without heat sink (PC=2W) 36 0 Collector to emitter saturation voltage VCE(sat) (V) IC VBE –6 Collector current IC (A) Collector power dissipation PC (W) 40 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 –10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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