ETC 2SB1553Q

Power Transistors
2SB1553
Silicon PNP epitaxial planar type
Unit: mm
18.0±0.5
Solder Dip
Symbol
Rating
Unit
Collector to base voltage
VCBO
−60
V
Collector to emitter voltage
VCEO
−60
V
Emitter to base voltage
VEBO
−6
V
Peak collector current
ICP
−6
A
Collector current
IC
−3
A
Base current
IB
−1
A
PC
15
W
Collector power
dissipation
TC = 25°C
Ta = 25°C
1.2±0.1
C 1.0
1.48±0.2
■ Absolute Maximum Ratings TC = 25°C
Parameter
2.5±0.1
• High forward current transfer ratio hFE
• Satisfactory linearity of forward current transfer ratio hFE
• Allowing automatic insertion with radial taping
5.0±0.1
1.0±0.2
13.0±0.2
■ Features
10.0±0.2
90˚
4.2±0.2
For power amplification
2.25±0.2
0.65±0.1
0.65±0.1
0.35±0.1
1.05±0.1
0.55±0.1
0.55±0.1
2.5±0.2
2.5±0.2
1 2 3
1 : Base
2 : Collector
3 : Emitter
MT-4 (MT4 Type Package)
2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
■ Electrical Characteristics TC = 25°C
Parameter
Symbol
Collector cutoff current
Max
Unit
ICBO
VCB = −60 V, IE = 0
Conditions
Min
Typ
−100
µA
ICEO
VCE = −40 V, IB = 0
−100
µA
Emitter cutoff current
IEBO
VEB = −6 V, IC = 0
−100
µA
Collector to emitter voltage
VCEO
Forward current transfer ratio *
Collector to emitter saturation voltage
Transition frequency
IC = −25 mA, IB = 0
−60
hFE
VCE = −4 V, IC = − 0.5 A
300
VCE(sat)
IC = −2 A, IB = − 0.05 A
fT
VCE = −12 V, IC = − 0.2 A, f = 10 MHz
V
700
−1
30
V
MHz
Note) *: Rank classification
Rank
Q
P
hFE
300 to 500
400 to 700
1
2SB1553
Power Transistors
PC  T a
IC  VCE
–6
TC=25˚C
(1) TC=Ta
(2) Without heat sink
(PC=2.0W)
(1)
5
–5
IB=–100mA
–80mA
–60mA
–4
–40mA
–3
–20mA
–2
–10mA
–5mA
–1
40
–3
–2
25˚C
TC=125˚C
–25˚C
–2mA
0
20
–4
–1
(2)
60
80 100 120 140 160
0
0
Ambient temperature Ta (˚C)
–2
–4
–6
–8
–10
–12
– 0.8
Transition frequency fT (MHz)
Forward current transfer ratio hFE
TC=100˚C
–1
–25˚C
– 0.1
– 0.03
–1
–3
25˚C
1000
25˚C
–3
– 0.3
TC=100˚C
–25˚C
300
100
30
10
– 0.01 – 0.03 – 0.1 – 0.3
–10
Collector current IC (A)
Cob  VCB
–1
–3
300
100
30
10
3
1
– 0.01 – 0.03 – 0.1 – 0.3
–10
ton, tstg, tf  IC
30
10
3
–3
Collector current IC (A)
Switching time ton,tstg,tf (µs)
100
Pulsed tw=1ms
Duty cycle=1%
IC/IB=40
(–IB1=IB2)
VCC=–50V
TC=25˚C
10
–3
–10
Area of safe operation (ASO)
–10
30
–1
Collector current IC (A)
100
IE=0
f=1MHz
TC=25˚C
–2.0
VCE=–12V
f=10MHz
TC=25˚C
Collector current IC (A)
1000
–1.6
fT  I C
3000
–10
–1.2
1000
VCE=–4V
IC/IB=40
–30
300
– 0.4
Base to emitter voltage VBE (V)
hFE  IC
10000
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
0
Collector to emitter voltage VCE (V)
VCE(sat)  IC
–100
Collector to emitter saturation voltage VCE(sat) (V)
Collector current IC (A)
10
0
Collector output capacitance Cob (pF)
VCE=–4V
–5
15
0
3
tf
1
ICP
Non
repetitive
pulse
TC=25˚C
t=10ms
IC
1ms
DC
–1
– 0.3
ton
tstg
0.3
– 0.1
0.1
– 0.03
0.03
1
–1
0.01
–3
–10
–30
–100
Collector to base voltage VCB (V)
2
IC  VBE
–6
Collector current IC (A)
Collector power dissipation PC (W)
20
0
–2
–4
–6
Collector current IC (A)
–8
– 0.01
0.1
0.3
1
3
10
30
100
Collector to emitter voltage VCE (V)
Power Transistors
2SB1553
Rth(t)  t
Thermal resistance Rth(t) (˚C/W)
10000
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
1000
100
(1)
(2)
10
1
0.1
10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
3
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2001 MAR