2SB1695K Transistors Low frequency amplifier 2SB1695K !External dimensions (Units : mm) !Features 1) A collector current is large. 2) VCE(sat) ≤ −370mV At IC =− 1A / IB = −50mA (2) 0.95 0.95 1.9 2.9 (3) 0.4 (1) !Application Low frequency amplifier Driver 1.6 1.1 0~0.1 0.8 0.15 2.8 0.3Min. Each lead has same dimensions ROHM : SMT3 EIAJ : SC-59 JEDEC : SOT-346 Symbol VCBO VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICP PC Power dissipation Junction temperature Tj Range of storage temperature Tstg Limits −30 −30 −6 −1.5 −3 200 150 −55~+150 (1) Emitter (2) Base (3) Collector !Packaging specifications !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Abbreviated symbol : FL Unit V V V A A∗ mW °C °C Package Type Taping Code T146 Basic ordering unit (pieces) 3000 2SB1695K ∗Single pulse, PW=1ms !Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Corrector output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −30 −30 −6 − − − 270 − − Typ. − − − − − −200 − 280 13 Max. − − − −100 −100 −370 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=−10µA IC=−1mA IE=−10µA VCB=−30V VEB=−6V IC=−1A, IB=−50mA VCE=−2V, IC=−100mA ∗ VCE=−2V, IE=100mA, f=100MHz ∗ VCB=−10V, IE=0A, f=1MHz ∗ Pulsed 1/2 2SB1695K Transistors VCE=−2V Pulsed Ta=25°C Ta=−40°C 100 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current Ta=100°C Ta=25°C Ta=−40°C 0.01 0.001 0 VBE(sat) 0.1 0.5 IC/IB=20/1 Pulsed 0.01 0.001 0.01 1 1 100 10 0.01 1.5 Cib Cob 10 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Ta=25°C Pulsed 1 0.1 IC/IB=50/1 0.01 IC/IB=10/1 IC/IB=20/1 0.001 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.3 Collector-emitter saturation voltage vs. collector current 1000 Ta=25°C VCE=−5V IC/IB=20/1 tstg 100 tf tdon 10 0.1 1 1 0.01 10 0.1 1 EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC (A) Fig.5 Gain bandwidth product vs. emitter current Fig.6 Switching time 10 10 COLLECTOR CURRENT : IC (A) Ta=25°C IC=0A f=1MHz 10 tr 1000 100 10 Ta=25°C VCE=−2V f=100MHz Fig.4 Grounded emitter propagation characteristics EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 0.1 COLLECTOR CURRENT : IC (A) BASE TO EMITTER CURRENT : VBE (V) 1 0.1 Ta=100°C Ta=25°C Ta=−40°C VCE(sat) 1000 VCE=−2V Pulsed 0.1 Ta=−40°C Ta=25°C Ta=100°C Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs. collector current TRANSITION FREQUENCY : fT (MHz) COLLECTOR CURRENT : IC (A) 1 1 SWITCHING TIME : (ns) DC CURRENT GAIN : hFE Ta=100°C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1000 BASE SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) !Electrical characteristic curves 1m s 1 10 PW =1 0 ms 0.1 DC 0m s Op era tio n 0.01 Ta=25°C Single Pulse 0.001 0.1 1 10 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.8 Safe Operating Area 2/2