Power Transistors 2SC3977, 2SC3977A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm ● ■ Absolute Maximum Ratings Parameter (TC=25˚C) Symbol Collector to 2SC3977 base voltage 2SC3977A Collector to 2SC3977 emitter voltage 2SC3977A Ratings Unit 900 VCBO 1000 800 V VEBO 7 V Peak collector current ICP 2 A Collector current IC 1 A Base current IB 0.3 A 30 PC Junction temperature Tj Storage temperature Tstg 2SC3977 current 2SC3977A 4.2±0.2 7.5±0.2 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Collector cutoff 2.54±0.25 W 2 ■ Electrical Characteristics 0.5 +0.2 –0.1 V VCEO Ta=25°C 0.8±0.1 1.3±0.2 5.08±0.5 Emitter to base voltage dissipation 1.4±0.1 1 900 Collector to emitter voltage Collector power TC=25°C φ3.1±0.1 V 1000 VCES 16.7±0.3 ● 2.7±0.2 4.0 ● High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 14.0±0.5 ● 4.2±0.2 5.5±0.2 Solder Dip ● 10.0±0.2 0.7±0.1 ■ Features Symbol ICBO Conditions min typ max VCB = 900V, IE = 0 50 VCB = 1000V, IE = 0 50 µA µA Emitter cutoff current IEBO VEB = 7V, IC = 0 Collector to emitter voltage VCEO IC = 10mA, IB = 0 hFE1 VCE = 5V, IC = 0.1A 8 hFE2 VCE = 5V, IC = 0.2A 3 Collector to emitter saturation voltage VCE(sat) IC = 0.2A, IB = 0.04A 1.5 V Base to emitter saturation voltage VBE(sat) IC = 0.2A, IB = 0.04A 1.5 V Transition frequency fT VCE = 10V, IC = 0.05A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio IC = 0.2A, IB1 = 0.04A, IB2 = – 0.08A, VCC = 250V 50 Unit 800 V MHz 15 0.7 µs 2.5 µs 0.3 µs 1 Power Transistors 2SC3977, 2SC3977A PC — Ta IC — VCE (1) 30 20 (2) 10 TC=25˚C IB=400mA 1.0 350mA 300mA 250mA 200mA 150mA 0.8 0.6 100mA 80mA 60mA 0.4 40mA 20mA 0.2 (3) (4) 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 Forward current transfer ratio hFE 3 TC=–25˚C 100˚C 0.3 0.3 1 3 100 30 10 TC=–25˚C 25˚C 100˚C 3 0.1 0.3 1 3 0.1 0.03 0.01 0.01 0.03 30 10 3 Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=–IB2) VCC=200V TC=25˚C 30 100 Collector to base voltage VCB (V) 10 10 3 1 0.3 0.01 0.03 0.1 0.3 1 10 3 tstg 1 ton 0.3 Non repetitive pulse TC=25˚C 3 tf 0.1 1 t=10ms 0.3s 0.3 0.1 0.03 0.01 0.003 0.001 0.01 30 3 Area of safe operation (ASO) 0.03 1 1 10 30 Switching time ton,tstg,tf (µs) 100 0.3 Collector current IC (A) ton, tstg, tf — IC IE=0 f=1MHz TC=25˚C 0.1 VCE=10V f=1MHz TC=25˚C 0.1 0.001 0.003 10 100 10 0.3 Collector current IC (A) Cob — VCB 3 –25˚C 1 fT — IC 300 1 0.01 0.03 10 1000 1 25˚C 3 100 VCE=5V Collector current IC (A) 300 TC=100˚C 10 Collector current IC (A) Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 10 0.1 12 IC/IB=5 30 hFE — IC 30 0.1 0.01 0.03 10 1000 IC/IB=5 25˚C 8 100 Collector to emitter voltage VCE (V) VBE(sat) — IC 100 1 6 Transition frequency fT (MHz) 0 Collector output capacitance Cob (pF) Collector to emitter saturation voltage VCE(sat) (V) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 0 2 VCE(sat) — IC 1.2 Collector current IC (A) Collector power dissipation PC (W) 40 0 0.2 0.4 0.6 Collector current IC (A) 0.8 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SC3977, 2SC3977A Area of safe operation, reverse bias ASO Reverse bias ASO measuring circuit 1.6 Lcoil=100µH IC/IB=5 (IB1=–IB2) TC=25˚C L coil 1.2 IB1 T.U.T IC IC 1.0 –IB2 Vin 0.8 VCC 0.6 0.4 0.2 0 0 Vclamp tW 2SC3977A 2SC3977 Collector current IC (A) 1.4 200 400 600 800 1000 1200 1400 1600 Collector to emitter voltage VCE (V) Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 1000 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. 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