Transistor 2SC4208, 2SC4208A Silicon NPN epitaxial planer type For low-frequency output amplification and driver amplification Complementary to 2SA1619 and 2SA1619A Unit: mm 5.0±0.2 4.0±0.2 ■ Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Collector to 2SC4208 base voltage 2SC4208A Collector to 2SC4208 Ratings 30 VCBO Unit +0.15 1.27 25 1.27 V 50 Emitter to base voltage VEBO 7 V Peak collector current ICP 1 A Collector current IC 500 mA PC 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C Symbol Conditions min ICBO VCB = 20V, IE = 0 VCBO IC = 10µA, IE = 0 VCEO IC = 10mA, IB = 0 VEBO IE = 10µA, IC = 0 7 hFE1*1 VCE = 10V, IC = 150mA*2 85 hFE2 VCE = 10V, IB = 500mA*2 40 Collector to emitter saturation voltage VCE(sat) IC = 300mA, IB = 30mA Base to emitter saturation voltage VBE(sat) Transition frequency fT Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz Collector to base 2SC4208 voltage 2SC4208A Collector to emitter 2SC4208 voltage 2SC4208A Emitter to base voltage Forward current transfer ratio 1:Emitter 2:Collector 3:Base TO–92NL Package 1 2 3 (Ta=25˚C) Parameter Collector cutoff current +0.15 0.45 –0.1 2.54±0.15 Collector power dissipation ■ Electrical Characteristics 0.45 –0.1 V 60 VCEO emitter voltage 2SC4208A 0.7±0.1 13.5±0.5 ● Low collector to emitter saturation voltage VCE(sat). Output of 1W is obtained with a complementary pair with 2SA1619 and 2SA1619A. Allowing supply with the radial taping. 0.7±0.2 ● 2.3±0.2 ● 8.0±0.2 ■ Features typ FE1 Unit 0.1 µA 30 V 60 25 V 50 V 340 0.35 0.6 IC = 300mA, IB = 30mA 1.1 1.5 VCB = 10V, IE = –50mA, f = 200MHz 150 V V MHz 6 15 *2 *1h max pF Pulse measurement Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 1 Transistor 2SC4208, 2SC4208A PC — Ta IC — VCE Ta=25˚C 0.6 0.4 IB=10mA 9mA 8mA 7mA 6mA 5mA 600 500 Collector current IC (mA) 0.8 4mA 400 3mA 300 2mA 200 1mA 600 500 400 300 200 0.2 100 100 0 60 80 100 120 140 160 0 0 4 30 10 3 1 Ta=75˚C 25˚C –25˚C 0.1 0.03 0.3 1 3 30 10 3 25˚C Ta=75˚C 1 –25˚C 0.3 0.1 0.03 0.01 0.01 0.03 10 0.1 fT — IE 0.3 200 160 120 80 40 Collector output capacitance Cob (pF) VCB=10V Ta=25˚C 1 3 Emitter current IE (mA) –100 8 10 250 Ta=75˚C 200 25˚C –25˚C 150 100 50 0 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) VCER — RBE 8 6 4 2 0 –30 6 VCE=10V 10 IE=0 f=1MHz Ta=25˚C 10 4 300 Cob — VCB 12 –10 2 Base current IB (mA) Collector current IC (A) 240 –3 0 IC/IB=10 Collector current IC (A) 0 –1 20 hFE — IC 100 Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 0.1 16 VBE(sat) — IC 100 0.01 0.01 0.03 12 Collector to emitter voltage VCE (V) VCE(sat) — IC 0.3 8 Forward current transfer ratio hFE 40 120 Collector to emitter voltage VCER (V) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) VCE=10V Ta=25˚C 700 1.0 0 Transition frequency fT (MHz) 800 700 0 2 IC — I B 800 Collector current IC (mA) Collector power dissipation PC (W) 1.2 IC=2mA Ta=25˚C 100 80 60 2SA4208A 40 2SA4208 20 0 1 3 10 30 100 Collector to base voltage VCB (V) 1 3 10 30 100 300 1000 Base to emitter resistance RBE (kΩ) Transistor 2SC4208, 2SC4208A ICEO — Ta 104 Area of safe operation (ASO) 10 VCE=10V Single pulse Ta=25˚C ICEO (Ta) ICEO (Ta=25˚C) 103 102 10 ICP 1 IC t=10ms 0.3 t=1s DC 0.1 0.03 0.01 2SC4208 2SC4208A Collector current IC (A) 3 0.003 1 0 40 80 120 160 200 Ambient temperature Ta (˚C) 0.001 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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