ETC 2SC4500(L)/(S)

2SC4500(L)/(S)
Silicon NPN Epitaxial
ADE-208-894 (Z)
1st. Edition
Sep. 2000
Application
Low frequency amplifier
Outline
DPAK
4
2, 4
4
1
1
2
3
S Type
12
3
L Type
1. Base
2. Collector
3. Emitter
4. Collector
3
2SC4500(L)/(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
7
V
Collector current
IC
1
A
Collector peak current
I C (peak)
2
A
Collector power dissipation
PC
0.8
W
PC *
1
8
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Min
Typ
Max
Unit
Test Conditions
Collector to emitter breakdown V(BR)CEO
voltage
60
—
—
V
I C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
7
—
—
V
I E = 0.1 mA, IC = 0
Collector cutoff current
I CBO
—
—
10
µA
VCB = 60 V, IE = 0
DC current transfer ratio
hFE
2000
—
—
Collector to emitter saturation
voltage
VCE (sat)
—
—
1.5
V
I C = 500 mA, IB = 0.5 mA*1
Base to emitter saturation
voltage
VBE (sat)
—
—
2.0
V
I C = 500 mA, IB = 0.5 mA*1
Turn on time
t on
—
100
—
ns
VCC = 12 V, IC = 250 mA,
Turn off time
t off
—
600
—
ns
I B1 = –IB2 = 5 mA
Note:
2
Symbol
1. Pulse Test.
VCE = 10 V, IC = 500 mA*1
2SC4500(L)/(S)
Maximum Collector Dissipation Curve
Area of Safe Operation
0.3
0.1
50
100
Case temperature TC (°C)
0.03
1.0
150
3
10
30
100
Collector to emitter voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
Typical Output Characteristics
0.8
0.6
0.4
200
180
160
140
112200
100
80 µA
0.2
IB = 0, Ta = 25°C
0
3
4
5
1
2
Collector to emitter voltage VCE (V)
100,000
DC current transfer ratio hFE
Collector current IC (A)
1.0
C)
25°
Ta = 25°C, 1 Shot Pulse
0
µs
4
100
8
1.0
s
=
TC
1m
s
on(
0 m rati
= 1 C Ope
D
Collector current IC (A)
3.0
PW
Collector power dissipation PC (W)
12
30,000
10,000
3,000
VCE = 10 V
Ta = 25°C
1,000
0.01
0.03
0.1
0.3
Collector current IC (A)
1.0
3
Collector to emitter saturation voltage VCE(sat) (V)
Base to emitter saturation voltage VBE(sat) (V)
2SC4500(L)/(S)
4
Saturation Voltage vs. Collector Current
10
3
VBE(sat)
1.0
VCE(sat)
0.3
IC = 1000 IB
Ta = 25°C
0.1
0.01
0.03
0.1
0.3
Collector current IC (A)
1.0
2SC4500(L)/(S)
Package Dimensions
1.7 ± 0.5
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
5.5 ± 0.5
6.5 ± 0.5
5.4 ± 0.5
3.1 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
16.2 ± 0.5
1.2 ± 0.3
2.29 ± 0.5
0.55 ± 0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
DPAK (L)-(1)
—
Conforms
0.42 g
2.3 ± 0.2
0.55 ± 0.1
(4.9)
(5.3)
6.5 ± 0.5
5.4 ± 0.5
1.2 Max
5.5 ± 0.5
1.7 ± 0.5
Unit: mm
0 – 0.25
2.5 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
0.55 ± 0.1
2.29 ± 0.5
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
DPAK (S)-(1)
—
Conforms
0.28 g
5
2SC4500(L)/(S)
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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Colophon 2.0
6