2SC5024 Silicon NPN Epitaxial Application High frequency amplifier Features • • • • Excellent high frequency characteristics fT = 300 MHz typ High breakdown voltage and low output capacitance VCEO = 200 V, Cob = 5.0 pF typ Suitable for wide band video amplifier Complimentary pair of 2SA1889 Outline TO-126FM 1 2 1. Emitter 2. Collector 3. Base 3 2SC5024 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 200 V Collector to emitter voltage VCEO 200 V Emitter to base voltage VEBO 4 V Collector current IC 0.2 A Collector peak current IC (peak) 0.5 A Collector power dissipation PC 1.4 W PC* 1 8 Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at TC = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 200 — — V IC = 10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 200 — — V IC = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 4 — — V IE = 10 µA, IC = 0 Collector cutoff current ICBO — — 10 µA VCB = 160 V, IE = 0 DC current 2SC5024B hFE 60 — 120 transfer ratio 2SC5024C hFE 100 — 200 Base to emitter voltage VBE — — 1.0 V VCE = 5 V, IC = 30 mA Collector to emitter saturation voltage VCE (sat) — — 1.0 V IC = 30 mA, IB = 3 mA Gain bandwidth product fT 200 300 — MHz VCE = 20 V, IC = 30 mA Collector output capacitance Cob — 5.0 — pF VCB = 30 V, IE = 0, f = 1 MHz See characteristic curves of 2SC4704. 2 VCE = 5 V, IC = 10 mA 2SC5024 Maximum Collector Power Dissipation Curve Collector Power Dissipation Pc (W) 8 Tc 6 4 2 0 Ta 50 100 150 200 3 2SC5024 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 4 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Straße 3 D-85622 Feldkirchen München Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071