Power Transistors 2SD1276, 2SD1276A Silicon NPN triple diffusion planar type Darlington Unit: mm ■ Absolute Maximum Ratings Parameter Symbol Collector to 2SD1276 base voltage 2SD1276A Collector to 2SD1276 emitter voltage 2SD1276A Ratings Unit 60 VCBO V 80 60 VCEO VEBO 5 V ICP 8 A Collector current IC 4 A Ta=25°C 40 PC Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C current 2SD1276A Collector cutoff 2SD1276 current 2SD1276A Emitter cutoff current Collector to emitter 2SD1276 voltage 2SD1276A Forward current transfer ratio 4.2±0.2 7.5±0.2 5.08±0.5 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) Internal Connection C B Conditions min typ max VCB = 60V, IE = 0 200 VCB = 80V, IE = 0 200 VCE = 30V, IB = 0 500 VCE = 40V, IB = 0 500 IEBO VEB = 5V, IC = 0 2 VCEO IC = 30mA, IB = 0 hFE1 VCE = 3V, IC = 0.5A 1000 hFE2* VCE = 3V, IC = 3A 2000 ICBO ICEO 60 2 4 VBE VCE = 3V, IC = 3A Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf IC = 3A, IB1 = 12mA, IB2 = –12mA, VCC = 50V µA µA mA 10000 IC = 5A, IB = 20mA Base to emitter voltage Unit V 80 IC = 3A, IB = 12mA VCE(sat) FE2 0.5 +0.2 –0.1 1 Collector to emitter saturation voltage *h 1.3±0.2 E Symbol 2SD1276 0.8±0.1 (TC=25˚C) Parameter Collector cutoff 1.4±0.1 W 2 ■ Electrical Characteristics φ3.1±0.1 V 80 Peak collector current dissipation 2.7±0.2 2.54±0.25 Emitter to base voltage Collector power TC=25°C 16.7±0.3 (TC=25˚C) 5.5±0.2 4.0 ● High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw 14.0±0.5 ● 4.2±0.2 Solder Dip ■ Features ● 10.0±0.2 0.7±0.1 For power amplification Complementary to 2SB0950 (2SB950) and 2SB0950A (2SB950A) 2.5 V V 20 MHz 0.5 µs 4 µs 1 µs Rank classification Rank hFE2 Q P 2000 to 5000 4000 to 10000 Note)The part numbers in the parenthesis show conventional part number. 1 Power Transistors 2SD1276, 2SD1276A PC — Ta IC — VCE (1) 40 30 20 (2) 10 10 TC=25˚C IB=4.0mA 8 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 6 1.0mA 0.5mA 4 2 25˚C 6 TC=100˚C –25˚C 4 2 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 4 6 8 10 0 Collector to emitter voltage VCE (V) VCE(sat) — IC hFE — IC 1 TC=100˚C –25˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 TC=100˚C 104 1000 25˚C –25˚C 103 102 0.1 0.3 1 3 Area of safe operation (ASO) t=1ms 3 IC 10ms 1 DC 0.3 0.03 0.01 1 3 10 30 2SD1276A 2SD1276 0.1 100 300 Collector to emitter voltage VCE 1000 (V) 30 10 3 0.3 1 3 10 30 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10 ICP 100 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 100 Collector to base voltage VCB (V) 103 Non repetitive pulse TC=25˚C 300 1 0.1 10 Collector current IC (A) 100 30 3.2 IE=0 f=1MHz TC=25˚C 3000 10 0.01 0.03 10 Collector output capacitance Cob (pF) Forward current transfer ratio hFE 25˚C 2.4 Cob — VCB VCE=3V 10 1.6 10000 IC/IB=250 30 3 0.8 Base to emitter voltage VBE (V) 105 100 Collector current IC (A) Collector current IC (A) 8 (3) (4) 0 2 VCE=3V Collector current IC (A) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 0 Collector to emitter saturation voltage VCE(sat) (V) IC — VBE 10 Collector current IC (A) Collector power dissipation PC (W) 50 1 Time t (s) 10 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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