Transistor 2SD1280 Silicon NPN epitaxial planer type For low-voltage type medium output power amplification Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.0–0.2 ● 2.6±0.1 ● 1.5±0.1 4.5±0.1 1.6±0.2 ■ Features 0.5±0.08 1.5±0.1 0.4±0.04 3.0±0.15 ■ Absolute Maximum Ratings * (Ta=25˚C) 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5 V Peak collector current ICP 2 A Collector current IC 1 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion ■ Electrical Characteristics 2 1 marking 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : R or more, and the board (Ta=25˚C) Parameter Symbol Conditions min typ Collector cutoff current ICBO VCB = 10V, IE = 0 Collector to emitter voltage VCEO IC = 1mA, IB = 0 Emitter to base voltage VEBO IE = 10µA, IC = 0 5 hFE1*1 VCE = 2V, IC = 500mA*2 90 150 hFE2 VCE = 2V, IC = 1.5A*2 50 100 VBE(sat) IC = 500mA, IB = 50mA*2 Forward current transfer ratio Base to emitter saturation voltage 1 µA V V 360 1.2 50mA*2 VCE(sat) IC = 1A, IB = Transition frequency fT VCB = 6V, IE = –50mA, f = 200MHz 150 Collector output capacitance Cob VCB = 6V, IE = 0, f = 1MHz 18 0.5 V V MHz pF *2 FE1 Unit 20 Collector to emitter saturation voltage *1h max Pulse measurement Rank classification Rank Q R S T hFE1 90 ~ 155 130 ~ 210 180 ~ 280 250 ~ 360 Marking Symbol RQ RR RS RT 1 2SD1280 Transistor PC — Ta IC — VCE 1.0 0.8 0.6 0.4 1.2 Ta=25˚C 1.0 0.2 IB=5.0mA 0.8 4.5mA 4.0mA 3.5mA 3.0mA 0.6 2.5mA 2.0mA 1.5mA 0.4 1.0mA 20 0.8 0.6 0.4 0.2 0.5mA 0 40 60 80 100 120 140 160 0 0 0.4 1.0 0.8 0.6 0.4 0.2 0 6 8 10 Collector to emitter saturation voltage VCE(sat) (V) VCE=2V Ta=25˚C 4 1.6 2.0 0 12 IC/IB=20 30 10 3 1 Ta=75˚C 0.3 25˚C –25˚C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 hFE — IC 1 3 100 175 150 125 100 75 50 25 0.3 1 25˚C Ta=–25˚C 1 75˚C 0.3 0.1 0.03 0.1 3 Collector current IC (A) 10 0 –1 0.3 1 3 10 Cob — VCB Collector output capacitance Cob (pF) –25˚C 200 0.1 3 Collector current IC (A) VCB=6V Ta=25˚C Transition frequency fT (MHz) 25˚C 0 0.01 0.03 10 50 VCE=2V Ta=75˚C 0.5 IC/IB=10 fT — I E 400 0.4 30 0.01 0.01 0.03 10 200 500 0.3 100 Collector current IC (A) 600 0.2 VBE(sat) — IC 100 Base current IB (mA) 300 0.1 Collector to emitter saturation voltage VCE(sat) (V) VCE(sat) — IC 1.2 2 1.2 Collector to emitter voltage VCE (V) IC — IB 0 0.8 Base to emitter saturation voltage VBE(sat) (V) 20 Ambient temperature Ta (˚C) Collector current IC (A) IC/IB=10 1.0 0.2 0 Forward current transfer ratio hFE Ta=25˚C Collector current IC (A) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 2 IC — VCE(sat) 1.2 Collector current IC (A) Collector power dissipation PC (W) 1.2 IE=0 f=1MHz Ta=25˚C 40 30 20 10 0 –3 –10 –30 Emitter current IE (mA) –100 1 3 10 30 100 Collector to base voltage VCB (V) 2SD1280 Transistor ICBO — Ta 104 ICEO — Ta 105 VCB=10V Area of safe operation (ASO) 10 VCE=18V Single pulse Ta=25˚C 3 I CP Collector current IC (A) 104 ICEO (Ta) ICEO (Ta=25˚C) ICBO (Ta) ICBO (Ta=25˚C) 103 102 103 102 10 1 t=10ms IC t=1s 0.3 DC 0.1 0.03 0.01 10 0.003 1 1 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 0.001 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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