Power Transistors 2SD1323 Silicon NPN triple diffusion planar type Darlington Unit: mm ● ● ■ Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO 30±5 V 4.2±0.2 φ3.1±0.1 1.4±0.1 0.8±0.1 VCEO 30±5 V Emitter to base voltage VEBO 5 V Peak collector current ICP 8 A Collector current IC 4 A Collector power TC=25°C Ta=25°C dissipation 40 PC Junction temperature Tj Storage temperature Tstg 1.3±0.2 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 Collector to emitter voltage 2.7±0.2 7.5±0.2 16.7±0.3 (TC=25˚C) 5.5±0.2 4.0 ● 14.0±0.5 ● Incorporating a zener diode of 30V zener voltage between collector and base Minimized variation in the breakdown voltage Large energy handling capability High-speed switching Full-pack package which can be installed to the heat sink with one screw 4.2±0.2 Solder Dip ■ Features ● 10.0±0.2 0.7±0.1 For midium speed power switching 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) Internal Connection C W 2 150 ˚C –55 to +150 ˚C B E ■ Electrical Characteristics (TC=25˚C) Symbol Parameter min Conditions typ max Unit Collector cutoff current ICBO VCB = 25V, IE = 0 100 µA Emitter cutoff current IEBO VEB = 5V, IC = 0 2 mA Collector to emitter voltage VCEO IC = 5mA, IB = 0 35 V hFE1 VCE = 3V, IC = 0.5A 1000 hFE2*1 VCE = 3V, IC = 3A 2000 Forward current transfer ratio 25 2.5 IC = 5A, IB = 20mA 4 2.5 Collector to emitter saturation voltage VCE(sat) Base to emitter saturation voltage VBE(sat) IC = 3A, IB = 12mA Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Energy handling capability Es/b*2 *1h FE2 Rank hFE2 Q IC = 3A, IB1 = 12mA, IB2 = –12mA, VCC = 20V IC = 2A, L = 100mH, RBE = 100Ω *2E s/b Rank classification P 10000 IC = 3A, IB = 12mA 200 V V 20 MHz 0.3 µs 3 µs 1 µs mJ Test circuit 60Hz mercury relay X L 2000 to 5000 4000 to 10000 120Ω 6V Y RBE 1Ω G 1 Power Transistors 2SD1323 PC — Ta IC — VCE (1) 40 30 20 (2) 10 TC=25˚C 5 IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 4 3 0.4mA 2 0.2mA 1 (3) (4) 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 1 VBE(sat) — IC 3 4 5 100˚C 25˚C 0.3 0.1 0.03 0.1 0.3 1 3 10 Collector current IC (A) Area of safe operation (ASO) Non repetitive pulse TC=25˚C 100 30 t=10ms 10 ICP 1ms 3 IC DC 1 0.3 0.1 1 3 10 30 100 1 –25˚C 0.3 0.1 0.03 0.01 0.01 0.03 300 0.1 0.3 TC=100˚C 25˚C 103 1000 Collector to emitter voltage VCE (V) 3 10 RBE=100Ω TC=25˚C 300 104 1 IC — Lcoil –25˚C 102 100 30 10 200mJ 3 1 0.3 10 0.01 0.03 0.1 0.1 0.3 1 3 Collector current IC (A) 1000 300 25˚C Collector current IC (A) Collector current IC (A) TC=–25˚C 0.01 0.01 0.03 TC=100˚C 3 VCE=3V 10 1 10 1000 IC/IB=250 30 3 IC/IB=250 30 hFE — IC 105 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 2 100 Collector to emitter voltage VCE (V) 100 Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 0 2 VCE(sat) — IC 6 Collector current IC (A) Collector power dissipation PC (W) 50 10 1 3 10 30 100 300 1000 Load inductance Lcoil (mH)