ETC 2SD1350/2SD1350A

Transistor
2SD1350, 2SD1350A
Silicon NPN triple diffusion planer type
For high breakdown voltage switching
Unit: mm
■ Features
Symbol
Collector to
2SD1350
base voltage
2SD1350A
Collector to
2SD1350
Ratings
*
4.5±0.1
0.55±0.1
400
VCBO
600
400
VCEO
500
VEBO
5
V
Peak collector current
ICP
1
A
Collector current
IC
500
mA
Collector power dissipation
PC*
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
Printed circuit board: Copper foil area of
thickness of 1.7mm for the collector portion
■ Electrical Characteristics
Symbol
2SD1350
voltage
2SD1350A
Collector to emitter
2SD1350
voltage
2SD1350A
1
2.5
1:Base
2:Collector
3:Emitter
2.5
EIAJ:SC–71
M Type Mold Package
or more, and the board
(Ta=25˚C)
Parameter
Collector to base
2
V
Emitter to base voltage
1cm2
0.45±0.05
V
3
emitter voltage 2SD1350A
1.0
0.85
Unit
4.1±0.2
(Ta=25˚C)
1.25±0.05
Parameter
2.4±0.2 2.0±0.2 3.5±0.1
■ Absolute Maximum Ratings
1.0
7
●
2.5±0.1
1.5 R0.9
R0.9
0.
●
6.9±0.1
1.5
0.4
●
High collector to base voltage VCBO.
High collector to emitter voltage VCEO.
Large collector power dissipation PC.
Low collector to emitter saturation voltage VCE(sat).
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
R
●
1.0±0.1
●
Conditions
VCBO
IC = 100µA, IE = 0
VCEO
IC = 500µA, IB = 0
min
typ
max
400
Unit
V
600
400
V
500
Emitter to base voltage
VEBO
IE = 100µA, IC = 0
5
Forward current transfer ratio
hFE
VCE = 5V, IC = 30mA
30
Collector to emitter saturation voltage
VCE(sat)
IC = 250mA, IB = 50mA*
1.5
V
Base to emitter saturation voltage
VBE(sat)
IC = 250mA, IB = 50mA*
1.5
V
Transition frequency
fT
VCB = 30V, IE = –20mA, f = 200MHz
Collector output capacitance
Cob
VCB = 30V, IE = 0, f = 1MHz
Turn-on time
Fall time
Storage time
2SD1350
2SD1350A
2SD1350
2SD1350A
2SD1350
2SD1350A
ton
tf
tstg
V
55
MHz
7
VCC = 200V, IC = 100mA
0.4
IB1 = 10mA, IB2 = –10mA
1.0
VCC = 200V, IC = 100mA
0.7
IB1 = 10mA, IB2 = –10mA
1.0
VCC = 200V, IC = 100mA
3.6
IB1 = 10mA, IB2 = –10mA
4.0
pF
µs
µs
µs
*
Pulse measurement
1
Transistor
2SD1350, 2SD1350A
IC — VCE
1.4
1.2
1.0
0.8
0.6
0.4
Ta=25˚C
100
Collector current IC (mA)
80
IB=1.0mA
60
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
40
0.4mA
0.3mA
0.2mA
0.1mA
20
0.2
0
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
2
10
30
10
3
25˚C
Ta=–25˚C
75˚C
0.3
0.1
0.03
0.01
3
10
30
100
300
1000
Collector current IC (mA)
IE=0
f=1MHz
Ta=25˚C
25
20
15
10
5
0
10
30
100
300
1000
Collector to base voltage VCB (V)
Ta=75˚C
1
25˚C
0.3
–25˚C
0.1
0.03
0.01
1
3
10
30
100
300
1000
Collector current IC (mA)
60
VCE=5V
100
80
Ta=75˚C
60
25˚C
–25˚C
40
20
1
3
10
30
100
300
Collector current IC (mA)
Cob — VCB
30
3
fT — I E
0
1
10
12
120
IC/IB=5
Forward current transfer ratio hFE
Base to emitter saturation voltage VBE(sat) (V)
8
IC/IB=5
30
hFE — IC
100
Collector output capacitance Cob (pF)
6
100
Collector to emitter voltage VCE (V)
VBE(sat) — IC
1
4
VCB=30V
Ta=25˚C
Transition frequency fT (MHz)
Collector power dissipation PC (W)
Printed circut board: Copper
foil area of 1cm2 or more, and
the board thickness of 1.7mm
for the collector portion.
0
2
VCE(sat) — IC
120
Collector to emitter saturation voltage VCE(sat) (V)
PC — Ta
1.6
1000
50
40
30
20
10
0
– 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3
Emitter current IE (A)
–1
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2001 MAR