Power Transistors 2SD1474 Silicon NPN epitaxial planar type Unit: mm 4.2±0.2 5.5±0.2 4.2±0.2 2.7±0.2 7.5±0.2 16.7±0.3 14.0±0.5 • High forward current transfer ratio hFE which has satisfactory linearity • High emitter to base voltage VEBO • Full-pack package which can be installed to the heat sink with one screw 10.0±0.2 φ 3.1±0.1 1.4±0.1 Solder Dip (4.0) ■ Features 0.7±0.1 For power amplification with high forward current transfer ratio Collector to base voltage 2.54±0.3 Symbol Rating Unit VCBO 100 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 15 V Peak collector current ICP 12 A Collector current IC 6 A Base current IB 3 A PC 40 W Collector power dissipation TC = 25°C Ta = 25°C 0.5+0.2 –0.1 0.8±0.1 ■ Absolute Maximum Ratings TC = 25°C Parameter 1.3±0.2 5.08±0.5 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package 1 2 3 2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ■ Electrical Characteristics TC = 25°C Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current ICBO VCB = 100 V, IE = 0 100 µA Emitter cutoff current IEBO VEB = 15 V, IC = 0 100 µA Collector to emitter voltage VCEO IC = 25 mA, IB = 0 60 hFE VCE = 4 V, IC = 1 A 300 VCE(sat) IC = 5 A, IB = 0.1 A Forward current transfer ratio * Collector to emitter saturation voltage Transition frequency V 2 000 0.5 V fT VCE = 12 V, IC = 0.5 A, f = 10 MHz 30 MHz Turn-on time ton IC = 5 A, IB1 = 0.1 A, IB2 = − 0.1 A, 0.3 µs Storage time tstg VCC = 50 V 1.5 µs Fall time tf 0.6 µs Note) *: Rank classification Rank hFE 310 Q P 300 to 1 200 800 to 2 000 Power Transistors 2SD1474 PC T a IC VCE VCE(sat) IC 6 Collector to emitter saturation voltage VCE(sat) (V) 80 60 50 (1) 40 30 20 5 Collector current IC (A) 9mA 8mA 4 7mA 6mA 3 5mA 4mA 2 3mA 2mA 1 (2) 10 IB=10mA 1mA (3) 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 25˚C 0.1 0.03 0.01 0.1 0.3 1 3 TC=100˚C 25˚C 103 –25˚C 102 Collector output capacitance Cob (pF) 0.1 0.3 1 3 0.01 0.1 0.3 Switching time ton,tstg,tf (µs) 300 100 30 10 100 Collector to base voltage VCB (V) 10 VCE=12V f=10MHz TC=25˚C 100 30 10 3 1 10 3 tstg 1 tf 0.3 0.1 0.3 1 3 10 Area of safe operation (ASO) 100 Non repetitive pulse TC=25˚C 30 ton 0.1 ICP 10 IC 3 t=10ms DC 1 0.3 0.1 0.03 0.01 30 3 Collector current IC (A) 0.03 3 1 300 0.1 0.01 0.03 10 Pulsed tw=1ms Duty cycle=1% IC/IB=50 (IB1=–IB2) VCC=50V TC=25˚C 30 1000 10 0.03 Collector current IC (A) ton, tstg, tf IC IE=0 f=1MHz TC=25˚C 3 –25˚C 0.1 Collector current IC (A) 100 1 25˚C 0.3 Cob VCB 0.3 0.3 fT I C 104 10 0.01 0.03 10 10000 1 0.1 TC=100˚C 1000 Collector current IC (A) 3000 1 VCE=2V Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) TC=–25˚C 100˚C 12 3 hFE IC 3 0.3 10 105 IC/IB=50 1 8 IC/IB=50 Collector to emitter voltage VCE (V) VBE(sat) IC 10 6 Transition frequency fT (MHz) 0 Collector current IC (A) Collector power dissipation PC (W) TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2.0W) 70 10 0.01 0 1 2 3 4 5 6 7 Collector current IC (A) 8 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) 311 2SD1474 Power Transistors Rth(t) t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 Time t (s) 312 10 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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