2SD2212 / 2SD2143 / 2SD1866 Transistors Medium Power Transistor (Motor, Relay drive) (60±10V, 2A) 2SD2212 / 2SD2143 / 2SD1866 zExternal dimensions (Units : mm) 2SD2212 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" loads. 3) Built-in resistor between base and emitter. 4) Built-in damper diode. 1.5 1.5 0.4 (3) (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) 0.4 ROHM : MPT3 EIAJ : SC-62 zAbsolute maximum ratings (Ta = 25°C) 5.1 0.8Min. 1.5 2.5 9.5 2SD2143 2SD1866 MPT3 1k~10k CPT3 1k~10k ATV 1k~10k T100 1000 TL 2500 TV2 2500 2SD1866 2.5 6.8 0.9 2SD2212 4.4 Type (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) ROHM : CPT3 EIAJ : SC-63 zPackaging specifications and hFE Package hFE Code Basic ordering unit (pieces) 6.5 0.75 0.9 (1) 2.3 (2) 1.0 ∗1 Single pulse Pw=100ms ∗2 When mounted on a 40×40×0.7mm ceramic board. ∗3 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger. C0.5 2.3 Tj Tstg 0.9 0.5 PC Junction temperature Storage temperature 1.5 5.5 0.65 2SD2212 2SD2143 2SD1866 Collector power dissipation 2SD2143 (3) IC Collector current Unit V V V A(DC) A(Pulse) ∗1 W ∗2 W(Tc=25°C) W ∗3 °C °C Limits 60±10 60±10 6 2 3 2 10 1 150 −55~+150 2.3 Symbol VCBO VCES VEBO 0.5 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage 1.0 zEquivalent circuit 0.65Max. 14.5 C 0.5 B (1) R1 E : Emitter B : Base C : Collector (2) (3) 2.54 2.54 R2 E R1 R2 1.05 3.5kΩ 300Ω (1) Emitter (2) Collector (3) Base ROHM : ATV zElectrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance ∗ Measured using pulse current. 0.45 Taping specifications Symbol BVCBO BVCEO ICBO IEBO VCE(sat) hFE Cob Min. 50 50 − − − 1000 − Typ. − − − − − − 25 Max. 70 70 1.0 3 1.5 10000 − Unit V V µA mA V − pF Conditions IC=50µA IC=5mA VCB=40V VEB=5V IC/IB=1A/1mA VCE=2V, IC=1A VCB=10V, IE=0A, f=1MHz ∗