ETC 2SD2598R

Transistor
2SD2598
Silicon NPN epitaxial planer type
darlington
Unit: mm
1.05 2.5±0.1
±0.05
4.0
0.8
■ Absolute Maximum Ratings
*
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
50
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
750
mA
Collector current
IC
Collector power dissipation
PC*1
Junction temperature
Tj
Storage temperature
Tstg
500
mA
1
W
150
˚C
–55 ~ +150
˚C
1cm2
Printed circuit board: Copper foil area of
thickness of 1.7mm for the collector portion
■ Electrical Characteristics
Parameter
14.5±0.5
2.5±0.5
1
2.5±0.5
2
3
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
(Ta=25˚C)
Parameter
+0.1
0.45–0.05
2.5±0.1
●
Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE
= 4000 to 20000.
A shunt resistor is omitted from the driver.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
+0.1
●
0.65 max.
0.45–0.05
●
1.0 1.0
0.2
For low-frequency amplification
■ Features
1:Emitter
2:Collector
3:Base
MT2 Type Package
1.2±0.1
0.65
max.
0.45+–0.1
0.05
(HW type)
Internal Connection
C
or more, and the board
B
E
(Ta=25˚C)
Symbol
(1.45)
0.5
4.5±0.1
0.15
6.9±0.1
0.7
max
Unit
Collector cutoff current
ICBO
VCB = 25V, IE = 0
100
nA
Emitter cutoff current
IEBO
VEB = 4V, IC = 0
100
nA
Collector to base voltage
VCBO
IC = 100µA, IE = 0
60
V
Collector to emitter voltage
VCEO
IC = 1mA, IB = 0
50
V
Emitter to base voltage
VEBO
IE = 100µA, IC = 0
5
V
*1
Conditions
typ
Forward current transfer ratio
hFE
Collector to emitter saturation voltage
VCE(sat)
IC = 500mA, IB = 0.5mA*2
2.5
V
Base to emitter saturation voltage
VBE(sat)
IC = 500mA, IB =
0.5mA*2
3.0
V
Transition frequency
fT
VCB = 10V, IE = –50mA, f = 200MHz
*1h
VCE = 10V, IC =
500mA*2
min
4000
20000
200
MHz
*2
FE
Rank classification
Rank
hFE
Q
Pulse measurement
R
4000 ~ 10000 8000 ~ 20000
1
2SD2598
Transistor
IC — VCE
1.2
0.8
0.4
Ta=25˚C
IB=150µA 125µA 100µA
750
Collector current IC (mA)
600
50µA
450
300
150
0
0
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
2
30
10
25˚C
Ta=–25˚C
75˚C
0.3
0.1
0.03
0.01
0.01 0.03
0.1
0.3
1
8
10
12
IC/IB=1000
30
10
3
25˚C
Ta=–25˚C
1
75˚C
0.3
0.1
0.03
0.01
0.01 0.03
0.1
3
Collector current IC (A)
10
9.0
Ta=75˚C
25˚C
–25˚C
103
102
10
1
0.01 0.03
1
3
10
Cob — VCB
VCE=10V
104
0.3
Collector current IC (mA)
hFE — IC
IC/IB=1000
1
6
105
Forward current transfer ratio hFE
Base to emitter saturation voltage VBE(sat) (V)
100
4
100
Collector to emitter voltage VCE (V)
VBE(sat) — IC
2
75µA
Collector output capacitance Cob (pF)
Collector power dissipation PC (W)
Printed circut board: Copper
foil area of 1cm2 or more, and
the board thickness of 1.7mm
for the collector portion.
1.6
3
VCE(sat) — IC
900
Collector to emitter saturation voltage VCE(sat) (V)
PC — Ta
2.0
f=1MHz
IE=0
Ta=25˚C
7.5
6.0
4.5
3..0
1.5
0
0.1
0.3
1
3
Collector current IC (A)
10
1
3
10
30
100
Collector to base voltage VCB (V)
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2001 MAR