ETC 2SK0198(2SK198)

Silicon Junction FETs (Small Signal)
2SK0198 (2SK198)
Silicon N-Channel Junction FET
For low-frequency amplification
unit: mm
+0.2
2.8 –0.3
■ Features
+0.25
0.65±0.15
1.45
0.95
1
3
+0.1
0.4 –0.05
1.9±0.2
1.5 –0.05
0.95
+0.2
● High mutual conductance gm
● Low noise type
● Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
2.9 –0.05
0.65±0.15
Ratings
Unit
Drain to Source voltage
Parameter
VDSX
Symbol
30
V
Gate to Drain voltage
VGDO
−30
V
Drain current
ID
20
mA
Gate current
IG
10
mA
Allowable power dissipation
PD
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
+0.1
0.16 –0.06
0.1 to 0.3
0.4±0.2
0 to 0.1
■ Absolute Maximum Ratings (Ta = 25°C)
0.8
+0.2
1.1 –0.1
2
1: Source
2: Drain
3: Gate
JEDEC: TO-236
EIAJ: SC-59
Mini Type Package (3-pin)
Marking Symbol (Example): 1O
■ Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Drain to Source cut-off current
IDSS
*
Gate to Source leakage current
IGSS
VGS = −30V, VDS = 0
Gate to Source cut-off voltage
VGSC
VDS = 10V, ID = 10µA
Mutual conductance
gm
Input capacitance (Common Source) Ciss
Reverse transfer capacitance (Common Source) Crss
Noise figure
*
NV
Conditions
VDS = 10V, VGS = 0
VDS = 10V, ID = 0.5mA, f = 1kHz
VDS = 10V, VGS = 0, f = 1kHz
VDS = 10V, VGS = 0, f = 1MHz
VDS = 30V, ID = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
min
typ
0.5
− 0.1
4
13
max
Unit
12
mA
−100
nA
−1.5
V
mS
14
pF
3.5
pF
60
mV
IDSS rank classification
Runk
P
Q
R
IDSS (mA)
0.5 to 3
2 to 6
4 to 12
Marking Symbol
1OP
1OQ
1OR
Note) The part number in the parenthesis shows conventional part number.
245
Silicon Junction FETs (Small Signal)
2SK0198
P D  Ta
I D  V DS
8
9.6
VDS=10V
Ta=25˚C
7
200
8.0
160
120
80
6
VGS=0V
5
4
– 0.1V
3
– 0.2V
2
– 0.3V
40
1
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
3.2
Ta=75˚C
1.6
2
4
6
8
10
25˚C
0
–1.0
12
Drain to source voltage VDS (V)
g m  VGS
IDSS=5.0mA
4
IDSS=5.0mA
VDS=10V
Ta=25˚C
16
12
2.0mA
8
4
2.0mA
0
– 0.8
0
– 0.6
– 0.4
– 0.2
0
0
Gate to source voltage VGS (V)
1
2
3
4
5
6
7
8
Drain current ID (mA)
C rss  V DS
12
VGS=–3V
f=1MHz
Ta=25˚C
Noise figure NF (dB)
3
2
1
VDS=10V
ID=5.2mA
Ta=25˚C
10
4
8
6
Rg=500Ω
4
2
1kΩ
0
0
1
3
10
30
Drain to source voltage VDS
100
(V)
– 0.2
0
1
10
102
103
Frequency f (Hz)
f=1MHz
VGS=–3V
Ta=25˚C
8
6
Ciss
4
Coss
2
0
1
3
10
30
100
Drain to source voltage VDS (V)
NF  f
5
Input capacitance (Common source),
Output capacitance (Common source) Ciss,Coss (pF)
Mutual conductance gm (mS)
8
– 0.4
10
VDS=10V
Ta=25˚C
12
– 0.6
C iss, C oss  V DS
20
16
– 0.8
Gate to source voltage VGS (V)
gm  I D
20
Reverse transfer capacitance (Common source) Crss (pF)
4.8
– 0.4V
0
0
246
6.4
–25˚C
0
Mutual conductance gm (mS)
Drain current ID (mA)
Drain current ID (mA)
Allowable power dissipation PD (mW)
240
I D  V GS
105
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2001 MAR