2SK3203(L), 2SK3203(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-1384A (Z) 2nd. Edition Jan. 2001 Features • Low on-resistance RDS(on) =11m typ. • Low drive current • 5V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 1 G S 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK3203(L), 2SK3203(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current ID 45 A 180 A 45 A 50 W Drain peak current I D(pulse) * Body-drain diode reverse drain current ID R 2 1 Channel dissipation Pch* Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 2 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50Ω 2SK3203(L), 2SK3203(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 30 — — V ID = 10mA, VGS = 0 Gate to source leak current IGSS — — ±0.1 µA VGS = ±20V, VDS = 0 Zero gate voltege drain current IDSS — — 10 µA VDS = 30 V, VGS = 0 Gate to source cutoff voltage 1.5 — 3.0 V ID = 1mA, VDS = 10V*1 Static drain to source on state RDS(on) — 11 14 mΩ ID = 20A, VGS = 10V*1 resistance — 18 28 mΩ ID = 20A, VGS = 5V*1 VGS(off) Forward transfer admittance |yfs| 13 22 — S ID = 20A, VDS = 10V*1 Input capacitance Ciss — 1200 — pF VDS = 10V Output capacitance Coss — 380 — pF VGS = 0 Reverse transfer capacitance Crss — 200 — pF f = 1MHz Total gate charge Qg — 23 — nc VDD = 10V Gate to source charge Qgs — 4.0 — nc VGS = 10V Gate to drain charge Qgd — 7.0 — nc ID = 45A Turn-on delay time t d(on) — 17 — ns VGS = 10V, ID = 20A Rise time tr — 300 — ns RL = 0.5Ω Turn-off delay time td(off) — 85 — ns Fall time tf — 65 — ns Body–drain diode forward voltage VDF — 1.15 — V IF = 45A, VGS = 0 Body–drain diode reverse recovery time tr r — 60 — ns IF =45A, VGS = 0 diF/ dt =20A/µs Note: 1. Pulse test 3 2SK3203(L), 2SK3203(S) Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 1000 I D (A) 60 300 40 20 30 10 3 1 50 100 150 Case Temperature 200 Tc (°C) µs 0 µs m = s DC 10 m Op s ( e 1 (T rati sho c = on t) 25 ¡C Operation in ) this area is limited by R DS(on) Pulse Test (A) 4.5 V 30 4V 20 10 0 V DS = 10 V Pulse Test ID 40 10V 6V 5V Typical Transfer Characteristics 50 VGS = 3.5 V 2 4 6 Drain to Source Voltage 8 10 V DS (V) Drain Current I D (A) 1 10 0.1 Ta = 25°C 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V) Typical Output Characteristics 50 Drain Current PW 0.3 0 4 10 100 Drain Current Channel Dissipation Pch (W) 80 40 30 20 Tc = 75°C 10 0 25°C —25°C 2 4 6 Gate to Source Voltage 10 8 V GS (V) 2SK3203(L), 2SK3203(S) Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 50 0.4 0.3 0.2 I D = 10 A 0.1 0 Static Drain to Source on State Resistance R DS(on) (m Ω) Pulse Test 5A 2A 4 8 12 Gate to Source Voltage 16 20 V GS (V) Static Drain to Source on State Resistance vs. Temperature 50 Pulse Test 40 10 A 30 5V 20 10 0 —40 Drain to Source On State Resistance R DS(on) (m Ω) 0.5 2A, 5 A VGS = 10 V I D = 2 A, 5 A, 10 A 0 40 80 120 160 Case Temperature Tc (°C) VGS = 5 V 20 10 V 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 Drain Current I D (A) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Drain to Source Voltage V DS(on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 100 Tc = —25 °C 30 10 25 °C 3 75 °C 1 0.3 0.1 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 100 Drain Current I D (A) 5 2SK3203(L), 2SK3203(S) Typical Capacitance vs. Drain to Source Voltage 10000 500 3000 Capacitance C (pF) 1000 200 100 50 10 0.1 0 20 10 0 6 V DS V DD = 25 V 10 V 5V 12 8 V DD = 25 V 10 V 5V 20 40 60 80 Gate Charge Qg (nc) 4 0 100 1000 V GS (V) 16 10 20 30 40 50 Drain to Source Voltage V DS (V) Gate to Source Voltage V DS (V) Drain to Source Voltage 30 20 V GS 40 VGS = 0 f = 1 MHz 10 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) I D = 45A Crss 100 30 Dynamic Input Characteristics 50 Coss 300 di / dt = 20 A / µs V GS = 0, Ta = 25°C 20 Ciss 1000 Switching Characteristics V GS = 10 V , V DD = 10 V 500 RG = 50 Ω , duty < 1 % Switching Time t (ns) Reverse Recovery Time trr (ns) Body—Drain Diode Reverse Recovery Time 200 100 t d(off) 50 20 10 0.1 0.2 tr tf t d(on) 0.5 1 2 Drain Current 5 10 I D (A) 20 2SK3203(L), 2SK3203(S) Reverse Drain Current vs. Souece to Drain Voltage Reverse Drain Current I DR (A) 50 40 10 V 30 5V 20 V GS = 0,-5V 10 Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 Tc = 25°C 1 D=1 0.5 0.3 0.1 0.03 0.01 10 0.2 θ ch — c(t) =γ s (t) ¥θ ch — c θ ch — c = 2.5°C/W, Tc = 25°C 0.1 0.05 PDM 0.02 1 lse 0.0 t pu o h 1s 100 D= PW T PW T 1m 10 m Pulse Width 100 m 1 10 PW (S) 7 2SK3203(L), 2SK3203(S) Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 10V 50Ω V DD = 10 V Vout 10% 10% 90% td(on) 8 tr 10% 90% td(off) tf 2SK3203(L), 2SK3203(S) Package Dimensions As of January, 2001 Unit: mm 2.54 ± 0.5 (1.4) 2.54 ± 0.5 11.3 ± 0.5 10.0 1.27 ± 0.2 0.2 0.86 +– 0.1 0.76 ± 0.1 11.0 ± 0.5 1.2 ± 0.2 4.44 ± 0.2 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 10.2 ± 0.3 2.59 ± 0.2 0.4 ± 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (L) — — 1.4 g 9 2SK3203(L), 2SK3203(S) As of January, 2001 Unit: mm (1.5) 7.8 7.0 1.7 7.8 6.6 1.3 ± 0.2 0.3 10.0 +– 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 0.2 0.1 +– 0.1 2.2 1.2 ± 0.2 2.54 ± 0.5 0.2 0.86 +– 0.1 2.54 ± 0.5 0.3 5.0 +– 0.5 1.27 ± 0.2 0.4 ± 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) 10 LDPAK (S)-(2) — — 1.35 g 2SK3203(L), 2SK3203(S) As of January, 2001 Unit: mm (1.5) 7.8 7.0 1.7 7.8 6.6 1.3 ± 0.2 0.3 10.0 +– 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 0.2 0.1 +– 0.1 2.2 1.2 ± 0.2 2.54 ± 0.5 0.2 0.86 +– 0.1 2.54 ± 0.5 0.3 5.0 +– 0.5 1.27 ± 0.2 0.4 ± 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (S)-(2) — — 1.35 g 11 2SK3203(L), 2SK3203(S) Cautions 1. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 12