ETC 2SK3461(L)|2SK3461(S)

2SK3461(L), 2SK3461(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-944 (Z)
1st. Edition
Mar. 2001
Features
• Low on-resistance
R DS(on) = 4.3 m typ.
• 4 V gate drive device
• High speed switching
Outline
LDPAK
4
4
D
1
1
G
S
2
3
2
3
1. Gate
2. Drain
3. Source
4. Drain
2SK3461(L), 2SK3461(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
85
A
340
A
85
A
60
A
308
mJ
110
W
Note 1
Drain peak current
ID
Body-drain diode reverse drain
current
I DR
Avalanche current
I AP
Avalanche energy
(pulse)
Note 3
EAR
Note 3
Note 2
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C: Rg ≥ 50 Ω
2
2SK3461(L), 2SK3461(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
60
—
—
V
I D = 10 mA, VGS = 0
Gate to source leak current
I DSS
—
—
10
µA
VDS = 60 V, VGS = 0
Zero gate voltage drain current I GSS
—
—
±0.1
µA
VGS = ±20 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.5
V
VDS = 10 V, ID = 1 mA
Forward transfer admittance
|yfs|
55
90
—
S
I D = 45 A, VDS = 10 V Note 1
Static drain to source on state
RDS(on)
—
4.3
5.5
mΩ
I D = 45 A, VGS = 10 V Note 1
resistance
RDS(on)
—
6.0
9.0
mΩ
I D = 45 A, VGS = 4 V Note 1
Input capacitance
Ciss
—
9770
—
pF
VDS = 10 V
Output capacitance
Coss
—
1340
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
470
—
pF
f = 1 MHz
Total gate charge
Qg
—
180
—
nc
VDD = 50 V
Gate to source charge
Qgs
—
32
—
nc
VGS = 10 V
Gate to drain charge
Qgd
—
36
—
nc
I D = 85 A
Turn-on delay time
td(on)
—
53
—
ns
VGS = 10 V
Rise time
tr
—
320
—
ns
I D = 45 A
Turn-off delay time
td(off)
—
700
—
ns
RL = 0.67 Ω
Fall time
tf
—
380
—
ns
Body-drain diode forward
voltage
VDF
—
1.0
—
V
I F = 85 A, VGS = 0
Body-drain diode reverse
recovery time
trr
—
70
—
ns
I F = 85 A, VGS = 0
diF/dt = 50 A/µs
Note:
Note 1
1. Pulse test
3
2SK3461(L), 2SK3461(S)
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
1000
ID (A)
120
80
40
100
30
10
Operation in
3 this area is
µs
1
00
=
1
µs
m
DC 10 m
Op s (1 s
e
(T rati sho
c = on
t)
25
°C
)
limited by RDS(on)
1
50
100
Case Temperature
150
Tc (°C)
0.1 Ta = 25°C
0.1 0.3
1
200
30
10
100
VDS (V)
Typical Transfer Characteristics
100
Pulse Test
V DS = 10 V
5V
ID (A)
80
VGS = 10 V
3
Drain to Source Voltage
Typical Output Characteristics
100
4V
60
Drain Current
ID (A)
PW
0.3
0
Drain Current
10
300
Drain Current
Channel Dissipation
Pch (W)
160
40
3V
20
80
Pulse Test
60
40
25°C
20
75°C
Tc = –25°C
2.5 V
0
4
2
4
6
Drain to Source Voltage
8
10
VDS (V)
0
1
2
3
Gate to Source Voltage
4
5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.5
100
Drain to Source on State Resistance
RDS(on) (mΩ)
Pulse Test
Pulse Test
30
0.4
VGS = 4 V
10
0.3
I D = 50 A
0.2
20 A
0.1
12
4
8
Gate to Source Voltage
20
16
12
I D = 50 A
10, 20 A
4V
4
0
–50
1
VGS = 10 V
0
50
100
Case Temperature
1
3
VGS (V)
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
8
10 V
0.1
16
10, 20, 50 A
150
Tc (°C)
200
30
100 300 1000
10
Drain Current ID (A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
0
3
0.3
10 A
Static Drain to Source on State Resistance
RDS(on) (mΩ)
Drain to Source Saturation Voltage VDS(on) (V)
2SK3461(L), 2SK3461(S)
500
200
V DS = 10 V
Pulse Test
100
50
Tc = –25°C
20
10
25°C
5
75°C
2
1
0.5
0.1
0.3
1
3
Drain Current
10
30
100
ID (A)
5
2SK3461(L), 2SK3461(S)
Typical Capacitance vs.
Drain to Source Voltage
Body-Drain Diode Reverse
Recovery Time
30000
di / dt = 50 A / µs
V GS = 0, Ta = 25°C
500
VGS = 0
f = 1 MHz
10000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1000
200
100
50
Ciss
3000
Coss
1000
300
20
10
0.1
0.3
1
3
10
Reverse Drain Current
30
100
0
100
IDR (A)
20
VDS = 50 V
25 V
10 V
V DS
VDS = 50 V
25 V
10 V
80
160
240
320
Gate Charge Qg (nc)
12
8
4
0
400
VGS (V)
t d(off)
500
Switching Time t (ns)
60
40
16
V GS
40
50
VDS (V)
1000
Gate to Emitter Voltage
VDS (V)
Collector to Emitter Voltage
80
0
6
20
I D = 85 A
10
20
30
Drain to Source Voltage
Switching Characteristics
Dynamic Input Characteristics
100
Crss
tf
200
100
50
20
tr
t d(on)
V GS = 10 V, V DD = 30 V
PW = 5 µs, duty < 1 %
10
2 5 10 20
0.1 0.2 0.5 1
Drain Current ID (A)
50 100
2SK3461(L), 2SK3461(S)
10 V
80
5V
60
V GS = 0, –5 V
20
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
400
I AP = 60 A
V DD = 15 V
duty < 0.1 %
Rg > 50 Ω
320
Repetitive Avalanche Energy
Reverse Drain Current
IF (A)
100
40
Maximum Avalanche Energy vs.
Channel Temperature Derating
EAR (mJ)
Reverse Drain Current vs.
Source to Drain Voltage
240
160
80
0
25
VSDF (V)
50
75
100
Channel Temperature
Avalanche Test Circuit
V DS
Monitor
125
150
Tch (°C)
Avalanche Waveform
EAR =
L
1
2
• L • I AP •
2
I AP
Monitor
VDSS
VDSS – V DD
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
15 V
50Ω
0
VDD
7
2SK3461(L), 2SK3461(S)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 1.14°C/W, Tc = 25°C
0.1
0.05
PDM
0.02
1
lse
0.0 t pu
o
h
1s
0.03
0.01
10 µ
D=
PW
T
PW
T
100 µ
1m
10 m
100 m
Pulse Width PW (s)
Switching Time Test Circuit
1
10
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
10 V
50Ω
V DD
= 30 V
Vout
10%
10%
90%
td(on)
8
tr
10%
90%
td(off)
tf
2SK3461(L), 2SK3461(S)
Package Dimensions
As of January, 2001
Unit: mm
2.54 ± 0.5
(1.4)
2.54 ± 0.5
11.3 ± 0.5
10.0
1.27 ± 0.2
0.2
0.86 +– 0.1
0.76 ± 0.1
11.0 ± 0.5
1.2 ± 0.2
4.44 ± 0.2
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
10.2 ± 0.3
2.59 ± 0.2
0.4 ± 0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
LDPAK (L)
—
—
1.4 g
9
2SK3461(L), 2SK3461(S)
As of January, 2001
Unit: mm
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.3
3.0 +– 0.5
1.27 ± 0.2
1.2 ± 0.2
7.8
7.0
(1.5)
0.2
0.1 +– 0.1
2.2
0.4 ± 0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
10
1.7
7.8
6.6
1.3 ± 0.15
0.3
10.0 +– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
LDPAK (S)-(1)
—
—
1.3 g
2SK3461(L), 2SK3461(S)
As of January, 2001
Unit: mm
(1.5)
7.8
7.0
1.7
7.8
6.6
1.3 ± 0.2
0.3
10.0 +– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
0.2
0.1 +– 0.1
2.2
1.2 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.3
5.0 +– 0.5
1.27 ± 0.2
0.4 ± 0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
LDPAK (S)-(2)
—
—
1.35 g
11
2SK3461(L), 2SK3461(S)
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Colophon 2.0
12