ETC 3SK180-6

Ordering number:ENN2129B
N-Channel Silicon MOSFET (Dual Gate)
3SK180
High-Frequency General-Purpose Amplifier
Applications
Applications
Package Dimensions
· FM tuners and VHF tuners.
unit:mm
2046A
Features
[3SK180]
· High power gain and low noise figure.
· High forward transfer admittance.
0.5
1.9
0.95 0.95
0.4
4
0.16
3
1
2
0.6
0.95 0.85
2.5
0.5
1.5
0 to 0.1
1 : Drain
2 : Source
3 : Gate 1
4 : Gate 2
SANYO : CP4
0.8
1.1
2.9
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
Unit
15
V
Gate1-to-Source Voltage
VDS
VG1S
±7
V
Gate2-to-Source Voltage
VG2S
±7
V
ID
30
mA
PD
Tch
200
mW
Channel Temperature
125
˚C
Storage Temperature
Tstg
–55 to +125
˚C
Drain Current
Allowable Power Dissipation
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Drain-to-Source Voltage
VDS
Gate1-to-Source Breakdown Voltage
V(BR)G1SS
Gate2-to-Source Breakdown Voltage
V(BR)G2SS
Gate1-to-Source Cutoff Voltage
VG1S(off)
VG2S(off)
Gate2-to-Source Cutoff Voltage
min
VG1S=–4V, VG2S=0V, IDS=100µA
IG1=10µA, VDS=0, VG2S=0V
IG2=10µA, VDS=0, VG1S=0V
VDS=10V, VG2S=4V, ID=100µA
VDS=10V, VG1S=0V, ID=100µA
Gate1-to-Source Leakage Current
IG1SS
VG1S=±5V, VG2S=VDS=0V
Gate2-to-Source Leakage Current
IG2SS
VG2S=±5V, VG1S=VDS=0V
Zero-Gate Voltage Drain Current
IDSS
* : The 3SK180 is classified by IDSS as follows : (unit : mA)
Marking : DJ
IDSS rank : 4, 5, 6
Ratings
Conditions
4
6.0
5.0
5
12.0
max
15
V
V
V
–3
2.5*
10.0
6
Unit
±7
±7
VDS=10V, VG1S=0, VG2S=4V
2.5
typ
24.0
V
–2.5
V
±50
nA
±50
nA
24*
mA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82599TH (KT)/90895MO (KOTO)6047KI/4246AT, TS 8-9917 No.2129–1/5
3SK180
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
min
typ
Forward Transfer Admittance
| yfs |
f=1kHz, ID=10mA, VDS=10V, VG2S=4V
20
Input Capacitance
Ciss
3.0
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz, VG1S=0V, VG2S=4V
VDS=10V, f=1MHz, VG1S=0V, VG2S=4V
Power Gain
PG
VDS=10V, ID=10mA
Noise Figure
NF
f=100MHz, VG2S=4V
0.02
22
max
mS
pF
0.05
28
1.8
Unit
pF
dB
3.0
dB
No.2129–2/5
3SK180
No.2129–3/5
3SK180
PG, NF Specified Test Circuit
No.2129–4/5
3SK180
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of August, 1999. Specifications and information herein are subject to
change without notice.
PS No.2129–5/5