4AE11 Silicon NPN/PNP Triple Diffused Application Low frequency power amplifier Outline SP-12 2 1 4 5 NPN 1 PNP 3 9 8 6 11 12 12 1, 5, 8, 12 2, 4, 9, 11 3, 6, 7, 10 Base Collector Emitter NPN 7 PNP 10 4AE11 Absolute Maximum Ratings (for each device, Ta = 25°C) Ratings Item Symbol NPN PNP Unit Collector to base voltage VCBO 300 –300 V Collector to emitter voltage VCEO 300 –300 V Emitter to base voltage VEBO 7 –7 V Collector current IC 0.3 –0.3 A Collector peak current IC(peak) 0.6 –0.6 A 32 32 W 1 Collector power dissipation PC* Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to 150 –55 to 150 °C Note: 1. Value at TC = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 300 — — V IC = 1 mA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 300 — — V IC = 10 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 7 — — V IE = 1 mA, IC = 0 Collector cutoff current ICBO — — 10 µA VCB = 300 V, IE = 0 ICEO — — 10 Emitter cutoff current IEBO — — 10 DC current transfer ratio hFE1 1000 — — VCE = 1.5 V, IC = 20 mA* hFE2 3000 — 30000 VCE = 1.5 V, IC = 100 mA* Collector to emitter saturation voltage VCE(sat) — — 1.5 V IC = 100 mA, IB = 0.2 mA* 1 Base to emitter saturation voltage VBE(sat) — — 2.0 V IC = 100 mA, IB = 0.2 mA* 1 Notes: 1. Pulse test. 2. The minus sign of PNP is omitted. 2 VCE = 60 V, RBE = ∞ µA VEB = 5 V, IC = 0 1 1 4AE11 Maximum Collector Dissipation Curve Collector power dissipation Pc (W) 60 4 device operation 3 device operation 40 2 device operation 1 device operation 20 0 50 100 Case Temperature TC (°C) 150 Note: Collector power dissipation of each devices is identical. Typical Output Characteristics (NPN) Collector current IC (mA) 500 TC = 25°C 100 90 80 70 60 50 400 300 40 200 30 20 100 IB = 0 0 10 µA 1 2 3 4 5 Collector to emitter voltage VCE (V) DC Current Transfer Ratio vs. Collector Current (NPN) DC current transfer ratio hFE 10,000 5,000 °C 75 = T C 5°C 2 °C 5 –2 2,000 1,000 500 200 100 50 VCE= 1.5 V Pulse 20 10 1 2 5 10 20 50 100 200 500 1,000 Collector current IC (mA) 3 4AE11 Collector to emitter saturation voltage VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V) Saturation Voltage vs. Collector Current (NPN) 10 TC = 25°C 5 200 2 VBE (sat) 1.0 500 0.5 VCE (sat) IC/IB = 200 0.2 0.1 2 5 10 20 50 100 200 Collector current IC (mA) 500 Typical Output Characteristics (PNP) TC = 25°C –180 –160 –140 20 –1 100 – 80 – –400 00 0 –6 –2 Collector current IC (mA) –500 0 –4 –300 –20 –200 µA –100 IB = 0 –1 –2 –3 –4 –5 Collector to emitter voltage VCE (V) 0 DC current transfer ratio hFE DC Current Transfer Ratio vs. Collector Current (PNP) 10,000 5,000 VCE= –1.5 V Pulse 2,000 1,000 500 Collector to emitter saturation voltage VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V) °C 75 °C 25 5° C –2 200 100 50 –1 4 TC = –3 –10 –30 –100 –300 –1,000 Collector current IC (mA) Saturation Voltage vs. Collector Current (PNP) –10 –5 200 –2 VBE (sat) –1.0 –0.5 –0.2 –0.1 –2 500 VCE (sat) IC/IB = 200 TC = 25°C –5 –10 –20 –50 –100–200 –500 Collector current IC (mA) 4AE11 Unit: mm 31.3 +0.2 –0.3 24.4 ± 0.1 16.4 ± 0.3 5.0 ± 0.2 2.0 ± 0.1 3.2 3.0 3.8 10.5 ± 0.5 2.7 10.0 ± 0.3 16.0 ± 0.3 φ 3.2 12 1 2.2 ± 0.2 1.15 2.54 0.85 ± 0.1 1.4 1 2 3 4 5 6 7 1.0 8 9 0.55 +0.1 –0.06 10 11 12 Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 Electrode B C E C B E E B C E C B Note: B: Base C: Collector E: Emitter 5 4AE11 When using this document, keep the following in mind: 1. 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