ETC 74LCXU04M

74LCXU04

LOW VOLTAGE CMOS HEX INVERTER
(SINGLE STAGE) WITH 5V TOLERANT INPUTS
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5V TOLERANT INPUTS
HIGH SPEED:
tPD = 5.2 ns (MAX.) at VCC = 3V
POWER-DOWN PROTECTION ON INPUTS
AND OUTPUTS
SYMMETRICAL OUTPUT IMPEDANCE:
|IOH| = IOL = 24 mA (MIN)
PCI BUS LEVELS GUARANTEED AT 24mA
BALANCED PROPAGATION DELAYS:
tPLH ≅ tPHL
OPERATING VOLTAGE RANGE:
VCC (OPR) = 2.0V to 3.6V (1.5V Data Retention)
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 04
LATCH-UP PERFORMANCE EXCEEDS 500mA
ESD PERFORMANCE:
HBM >2000V; MM > 200V
DESCRIPTION
The LCX04 is a low voltage CMOS HEX
INVERTER fabricated with sub-micron silicon
gate and double-layer metal wiring C2MOS
M
(Micro Package)
T
(TSSOP Package)
ORDER CODES :
74LCXU04M
74LCXU04T
technology. It is ideal for low power and high
speed 3.3V applications. it can be interfaced to
5V signal environment for inputs.
It has same speed performance at 3.3V than 5V,
AC/ACT family, combined with a lower power
consumption.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
June 2000
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74lcxu04
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
TRUTH TABLE
PIN No
SYMBOL
NAME AND FUNCT ION
1, 3, 5, 9,
11, 13
1A to 6A
2, 4, 6, 8,
10, 12
1Y to 6Y
Data Outputs
7
GND
Ground (0V)
14
VCC
Positive Supply Voltage
Data Inputs
A
Y
L
H
H
L
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
Supply Voltage
-0.5 to + 7.0
V
VI
DC Input Voltage
-0.5 to + 7.0
V
VO
DC Output Voltage (VCC=0V)
VO
DC Output Voltage (High or Low State) (note1)
IIK
VCC
-0.5 to + 7.0
V
-0.5 to VCC + 0.5
V
DC Input Diode Current
- 50
mA
IOK
DC Output Diode Current (note2)
± 50
mA
IO
DC Output Source/Sink Current
± 50
mA
ICC
DC Supply Current per Supply Pin
± 100
mA
IGND
DC Ground Current per Supply Pin
± 100
mA
Tstg
Storage Temperature
TL
Lead Temperature (10 sec)
-65 to +150
o
300
o
C
C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
1) IO absolute maximum rating must be observed
2) VO < GND, VO > VCC
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74lcxu04
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Parameter
Supply Voltage (note 1)
Value
Unit
2.0 to 3.6
V
VI
Input Voltage
0 to 5.5
V
VO
Output Voltage (VCC=0V)
0 to 5.5
V
VO
Output Voltage (High or Low State)
0 to VCC
V
± 24
mA
± 12
mA
IOH, IOL
High or Low Level Output Current (VCC = 3.0 to 3.6V)
IOH, IOL
High or Low Level Output Current (VCC = 2.7 to 3.0V)
Top
dt/dv
Operating Temperature:
o
-40 to +85
Input Transition Rise or Fall Rate (V CC = 3.0V) (note 2)
0 to 10
C
ns/V
1) Truth Table guaranteed: 1.5V to3.6V
2) VIN from0.8V to 2.0V
DC SPECIFICATIONS
Symb ol
Parameter
Test Co nditi ons
Value
-40 to 85 C
V CC
(V)
VIH
High Level Input Voltage
VIL
Low Level Input Voltage
VOH
High Level Output Voltage
Min.
Low Level Output Voltage
0.8
VI =
V IL
2.7 to 3.6
2.7
3.0
3.0
II
Input Leakage Current
Ioff
Power Off Leakage Current
ICC
Quiescent Supply Current
∆ICC
ICC incr. per input
V
V
IO=-100 µA V CC -0.2
2.7 to 3.6
3.0
VOL
Max.
2.0
2.7 to 3.6
2.7
Un it
o
VI =
VI H
IO=-12 mA
2.2
IO=-18 mA
2.4
IO=-24 mA
2.2
V
IO=100 µA
0.2
IO=12 mA
0.4
IO=16 mA
0.4
IO=24 mA
0.55
V
VI = 0 to 5.5 V
±5
µA
0
VI or VO = 5.5V
100
µA
2.7 to 3.6
VI = VCC or GND
10
VI or VO =
3.6 to 5.5V
±10
µA
VIH = VCC -0.6V
500
µA
2.7 to 3.6
2.7 to 3.6
DYNAMIC SWITCHING CHARACTERISTICS
Symb ol
Parameter
Test Con dition s
VOLP
VOLV
Dynamic Low Voltage Quiet Output
(note 1)
3.3
Value
Un it
T A = 25 o C
V CC
(V)
Min .
C L = 50 pF
V IL = 0 V
V IH = 3.3V
T yp.
Max.
0.8
-0.8
V
1) Number ofoutputs defined as ”n”. Measured with”n-1” outputs switching from HIGH to LOW or LOW t o HIGH. The remaining output is measured in
the LOW state.
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74lcxu04
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, RL = 500 Ω, Input tr = tf = 2.5 ns)
Symb ol
Parameter
V CC
(V)
tPLH
tPHL
Propagation Delay Time
tOSLH
tOSHL
Output to Output Skew Time (note 1, 2)
Test Con dition
Waveform
2.7
Value
-40 to 85 o C
Min. Max.
6.0
1
3.0 to 3.6
3.0 to 3.6
1.0
5.2
1.0
Un it
ns
ns
1) Skew is defined as the absolute value of the difference between the actual propagation delay for any twooutputs of the same device switching in the
same direction, either HIGH or LOW (tOSLH = |tPLHm - tPLHn|, tOSHL = |tPHLm - tpHLn|)
2) Parameter guaranteed by design
CAPACITIVE CHARACTERISTICS
Symb ol
Parameter
Test Co nditi ons
Valu e
Un it
T A = 25 oC
V CC
(V)
Min.
T yp.
Max.
C IN
Input Capacitance
3.3
VIN = 0 to VCC
6
pF
CPD
Power Dissipation Capacitance (note 1)
3.3
fIN = 10MHz
VIN = 0 or VCC
50
pF
1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. Average
operting current can be obtained by the following equation. I CC(opr) = CPD • VCC • fIN + ICC/6 (per gate)
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74lcxu04
TEST CIRCUIT
CL = 50 pF or equivalent (includes jigand probe capacitance)
RL = 500Ω or equivalent
RT = ZOUT of pulse generator (typically 50Ω)
WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle)
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SO-14 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
A
a1
inch
MAX.
MIN.
TYP.
1.75
0.1
0.068
0.2
a2
MAX.
0.003
0.007
1.65
0.064
b
0.35
0.46
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.5
0.019
c1
45 (typ.)
D
8.55
8.75
0.336
0.344
E
5.8
6.2
0.228
0.244
e
1.27
e3
0.050
7.62
0.300
F
3.8
4.0
0.149
0.157
G
4.6
5.3
0.181
0.208
L
0.5
1.27
0.019
0.050
M
S
0.68
0.026
8 (max.)
P013G
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74lcxu04
TSSOP14 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
A
MAX.
MIN.
TYP.
MAX.
1.1
0.433
A1
0.05
0.10
0.15
0.002
0.004
0.006
A2
0.85
0.9
0.95
0.335
0.354
0.374
b
0.19
0.30
0.0075
0.0118
c
0.09
0.20
0.0035
0.0079
D
4.9
5
5.1
0.193
0.197
0.201
E
6.25
6.4
6.5
0.246
0.252
0.256
E1
4.3
4.4
4.48
0.169
0.173
0.176
e
0.65 BSC
0.0256 BSC
K
0o
4o
8o
0o
4o
8o
L
0.50
0.60
0.70
0.020
0.024
0.028
A
A2
A1
b
e
K
c
L
E
D
E1
PIN 1 IDENTIFICATION
1
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74lcxu04
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