ETC AS8S128K32

SRAM
AS8S128K32
Austin Semiconductor, Inc.
128K x 32 SRAM
PIN ASSIGNMENT
SRAM MEMORY ARRAY
(Top View)
68 Lead CQFP (Q)
AVAILABLE AS MILITARY
SPECIFICATIONS
• SMD 5962-95595: -Q
• SMD 5962-93187: -P or -PN
• MIL-STD-883
FEATURES
• Access times of 15, 17, 20, 25, 35, and 45 ns
• Built in decoupling caps for low noise operation
• Organized as 128K x32; User configured as
256Kx16 or 512K x8
• Operation with single 5 volt supply
• Low power CMOS
• TTL Compatible Inputs and Outputs
• 2V Data Retention, Low power standby
OPTIONS
•
•
66 Lead PGA- Pins 8, 21, 28, 39 are grounds (P)
MARKINGS
Timing
15ns
17ns
20ns
25ns
35ns
45ns
-15
-17
-20
-25
-35
-45
Package
Ceramic Quad Flatpack
Pin Grid Array -8 Series
Pin Grid Array -8 Series
Q
P
PN
No. 702
No. 802
No. 802
66 Lead PGA- Pins 8, 21, 28, 39 are no connects (PN)
NOTE: PN indicates a no connect on pins 8, 21, 28, 39
GENERAL DESCRIPTION
CE2
WE2
CE1
WE1
A0 - 16
M1
M0
128K x 8
M2
128K x 8
CE3
WE3
128K x 8
M3
WE4
OE
For more products and information
please visit our web site at
www.austinsemiconductor.com
AS8S128K32
Rev. 3.5 7/00
CE4
128K x 8
The Austin Semiconductor, Inc. AS8S128K32 is a 4 Megabit CMOS SRAM Module organized as 128Kx32-bits and user
configurable to 256Kx16 or 512Kx8. The AS8S128K32 achieves
high speed access, low power consumption and high reliability
by employing advanced CMOS memory technology.
The military temperature grade product is suited for military applications.
The AS8S128K32 is offered in a ceramic quad flatpack module per SMD-5962-95595 with a maximum height of 0.140 inches.
This module makes use of a low profile, mutlichip module design.
This device is also offered in a 1.075 inch square ceramic
pin grid array per SMD 5692-93187, which has a maximum height
of 0.195 inches. This package is also a low profile, multi-chip
module design reducing height requirements to a minimum.
I/O 24 - I/O 31
I/O 16 - I/O 23
I/O 8 - I/O 23
I/O 0 - I/O 7
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
SRAM
AS8S128K32
Austin Semiconductor, Inc.
ABSOLUTE MAXIMUM RATINGS*
This is a stress rating only and functional operation on the
device at these or any other conditions above those indicated
in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
**Junction temperature depends upon package type, cycle time,
loading, ambient temperature and airflow. See the Application
Information section at the end of this datasheet for more information.
Voltage of Vcc Supply Relative to Vss.....................-1V to +7V
Storage Temperature..........................................-65°C to +150°C
Short Circuit Output Current(per I/O)...............................20mA
Voltage on Any Pin Relative to Vss..................-.5V to Vcc+1V
Maximum Junction Temperature**.................................+175°C
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55°C<TA<125°C; Vcc = 5v ±10%)
! "#$#%" &
''"!
( ) ) µΑ
! "#$#%" &
''"!
( ) ) µΑ
µΑ
/
/
/
( ! ! "#$#%" & ''"! (** +*,( ) ) . /0#
( ( . 0#
12 PARAMETER
Power Supply Current:
Operating
Power Supply Current:
Standby
SYM
-15
-17
MAX
-20
-25
-35
-45
CE\<VIL; VCC=MAX
f = MAX = 1/tRC (MIN)
Outputs Open
Icc
700
650
600
560
520
500
mA
3, 13
CE\>VIH; VCC=MAX
f = MAX = 1/tRC (MIN)
Outputs Open
ISBT1
280
220
200
180
160
150
mA
(1)
CE\ = OE\ = VIH;
CMOS Compatible; VCC = MAX
f = 5 MHz
ISBT2
100
80
80
60
60
60
mA
(1)
CE\ > Vcc -0.2V; Vcc = MAX
VIL < Vss +0.2V;
VIH > VCC -0.2V; f = 0 Hz
ISBC1
40
40
40
40
40
40
mA
(2)
ISBC2
24
24
24
24
24
24
mA
(2)
CONDITIONS
CE\ > Vcc -0.2V; Vcc = MAX
VIL < Vss +0.2V;
VIH > Vcc -0.2V; f = 0 Hz
"L" Version Only
UNITS NOTES
(1)
NOTE: 1) Address switching sequence A, A+1, A+2, etc.
2) 1/2 input at HIGH, 1/2 input at LOW.
AS8S128K32
Rev. 3.5 7/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
SRAM
AS8S128K32
Austin Semiconductor, Inc.
CAPACITANCE TABLE (VIN = 0V, f = 1 MHz, TA = 25oC)
SYMBOL
CADD
PARAMETER
A0 - A18 Capacitance
COE
OE\ Capacitance
40
pF
4
CWE, CCE
WE\ and CE\ Capacitance
20
pF
4
CIO
I/O 0- I/O 31 Capacitance
20
pF
4
TRUTH TABLE
MODE
Read
Write
Standby
Not Selected
OE\
L
X
X
H
CE\
L
L
H
L
MAX
40
UNITS
pF
NOTES
4
WE\
H
L
X
H
I/O
Q
D
HIGH Z
HIGH Z
POWER
ACTIVE
ACTIVE
STANDBY
ACTIVE
AC TEST CONDITIONS
TEST SPECIFICATIONS
Input pulse levels........................................VSS to 3V
Input rise and fall times..........................................5ns
Input timing reference levels.................................1.5V
Output reference levels........................................1.5V
Output load.............................................See Figures 1
IOL
Current Source
Device
Under
Test
-
+
Vz = 1.5V
(Bipolar
Supply)
+
Ceff = 50pf
Current Source
NOTES:
IOH
Vz is programable from -2V to + 7V.
IOL and IOH programmable from 0 to 16 mA.
Vz is typically the midpoint of VOH and VOL.
IOL and IOH are adjusted to simulate a typical resistive load
circuit.
Figure 1
AS8S128K32
Rev. 3.5 7/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
SRAM
AS8S128K32
Austin Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Note 5) (-55°C≤TA≤125°C; Vcc = 5v ±10%)
DESCRIPTION
READ CYCLE
READ cycle time
Address access time
Chip enable access time
Output hold from address change
Chip enable to output in Low-Z
Chip disable to output in High-Z
Chip enable to power-up time
Chip disable to power-down time
Output enable access time
Output enable to output in Low-Z
Output disable to output in High-Z
WRITE CYCLE
WRITE cycle time
Chip enable to end of write
Address valid to end of write
Address setup time
Address hold from end of write
-15
-17
-20
-25
-35
-45
SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES
t
RC
AA
t
ACE
t
OH
t
LZCE
t
HZCE
t
PU
t
PD
t
AOE
t
LZOE
t
HZOE
15
t
t
WC
CW
t
AW
t
AS
t
AH
t
WRITE pulse width
t
WRITE pulse width
Data setup time
Data hold time
Write disable to output in Low-z
Write enable to output in High-Z
t
WP1
WP2
t
DS
t
DH
t
LZWE
t
HZWE
17
15
15
2
2
2
2
0
8
0
0
12
8
1
2
7
17
12
12
0
1
1
12
1
12
9
1
2
7
1
1
9
2
2
0
2
2
0
0
45
45
14
25
8
7
45
35
35
10
20
7
0
6
15
12
12
0
1
9
17
7
35
25
25
2
2
0
15
6
0
25
20
20
2
2
7
12
20
17
17
15
0
35
12
0
9
ns
ns
ns
ns
ns
ns
45
12
0
12
12
ns
ns
ns
20
15
15
0
1
25
17
17
0
1
35
20
20
0
1
45
22
22
0
1
ns
ns
ns
ns
ns
15
17
20
20
ns
15
10
1
2
17
12
1
2
20
15
1
2
20
15
1
2
ns
ns
ns
ns
ns
10
11
14
15
4, 6, 7
4, 6, 7
4
4
4, 6
4, 6, 7
4, 6, 7
4, 6, 7
NOTES:
1) For OE\ = HIGH condition. For OE\ = LOW condition tWP1 = tWP2 = 15 ns MIN.
AS8S128K32
Rev. 3.5 7/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
SRAM
AS8S128K32
Austin Semiconductor, Inc.
NOTES
7. At any given temperature and voltage condition,
tHZCE, is less than tLZCE, and tHZWE is less than tLZWE.
8. ?W/E is HIGH for READ cycle.
9. Device is continuously selected. Chip enables and output
enable are held in their active state.
10. Address valid prior to or coincident with latest occurring
chip enable.
11. tRC= READ cycle time.
12. Chip enable (?C/E) and write enable (?W/E) can initiate and
terminate a WRITE cycle.
13. 32 bit operation
1. All voltages referenced to VSS (GND).
2. -3v for pulse width <20ns.
3. ICC is dependent on output loading and cycle rates.
The specified value applies with the outputs
1
open, and f=
HZ.
t
RC(MIN)
4. This parameter is sampled.
5. Test conditions as specified with output loading as
shown in Fig. 1 unless otherwise noted.
6. tHZCE, tHZOE and tHZWE are specified with CL= 5pF
as in Fig. 2. Transition is measured +/- 200 mV
typical from steady state coltage, allowing for actual
tester RC time constant.
DATA RETENTION ELECTRICAL CHARACTERISTICS
DESCRIPTION
VCC for Retention Data
CONDITIONS
Data Retention Current
SYMBOL
VDR
MIN
2
MAX
--
UNITS
V
NOTES
CE\ > VCC - 0.2V
VCC = 2.0V
ICCDR
--
6
mA
VIN > VCC - 0.2V
VCC = 3V
ICCDR
--
11.6
mA
tCDR
0
--
ns
4
tR
tRC
ns
4, 11
Chip Deselect to Data
Retention Time
Operation Recovery Time
LOW VCC DATA RETENTION WAVEFORM
DATA RETENTION MODE
VDR >2V
4.5V
Vcc
4.5V
tCDR
tR
VIH
VDR
CE\
VIL
AS8S128K32
Rev. 3.5 7/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
SRAM
AS8S128K32
Austin Semiconductor, Inc.
READ CYCLE NO. 1(8,9)
tRC
ADDRESS
VALID
tAA
tOH
DQ
PREVIOUS DATA VALID
DATA VALID
READ CYCLE NO. 2(7,8,10)
tRC
CE\
tAOE
tHZOE
tLZOE
OE\
tLZCE
tACE
tHZCE
DQ
DATA VALID
tPU
tPD
Icc
AS8S128K32
Rev. 3.5 7/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
6
SRAM
AS8S128K32
Austin Semiconductor, Inc.
WRITE CYCLE NO. 1
(Chip Enable Controlled)
tWC
ADDRESS
tAW
tAH
tAS
tCW
CE\
tWP1
WE\
tDS
D
tDH
DATA VAILD
Q
HIGH Z
WRITE CYCLE NO. 2
(Write Enable Controlled)
tWC
ADDRESS
ADDRESS VALID
tAW
tAH
tCW
CE\
tAS
tWP2
WE\
tDS
D
tDH
DATA VALID
tLZWE
tHZWE
Q
AS8S128K32
Rev. 3.5 7/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
7
SRAM
AS8S128K32
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #702 (Package Designator Q)
SMD 5962-95595, Case Outline M
D2
D1
DETAIL A
D
R
1o - 7o
B
b
L1
e
SEE DETAIL A
A
A2
E3
SMD SPECIFICATIONS
SYMBOL
A
A1
A2
B
b
D
D1
D2
E
e
R
L1
MIN
0.123
0.118
0.005
MAX
0.200
0.186
0.015
0.010 REF
0.013
0.017
0.800 BSC
0.870
0.980
0.936
0.890
1.000
0.956
0.050 BSC
0.010 TYP
0.035
0.045
*All measurements are in inches.
AS8S128K32
Rev. 3.5 7/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
8
SRAM
AS8S128K32
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #904 (Package Designator P & PN)
SMD 5962-93187, Case Outline 4 and 5
4xD
D1
A
D2
Pin 56
A1
Pin 1
φb1
(identified by
0.060 square pad)
E1
e
φb
Pin 66
e
φb2
Pin 11
L
SMD SPECIFICATIONS
SYMBOL
A
A1
φb
φb1
φb2
D
D1/E1
D2
e
L
MIN
0.135
0.025
0.016
0.045
0.065
1.064
MAX
0.195
0.035
0.020
0.055
0.075
1.086
1.000 BSC
0.600 BSC
0.100 BSC
0.145
0.155
*All measurements are in inches.
AS8S128K32
Rev. 3.5 7/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
SRAM
AS8S128K32
Austin Semiconductor, Inc.
ORDERING INFORMATION
EXAMPLE: AS8S128K32Q-25/XT
Device Number
AS8S128K32
AS8S128K32
AS8S128K32
AS8S128K32
AS8S128K32
AS8S128K32
Package
Type
Q
Q
Q
Q
Q
Q
Speed
ns
-15
-17
-20
-25
-35
-45
Process
/*
/*
/*
/*
/*
/*
EXAMPLE: AS8S128K32PN-20/883C
Device Number
AS8S128K32
AS8S128K32
AS8S128K32
AS8S128K32
AS8S128K32
AS8S128K32
AS8S128K32
AS8S128K32
AS8S128K32
AS8S128K32
AS8S128K32
AS8S128K32
Package
Type
P
PN
P
PN
P
PN
P
PN
P
PN
P
PN
Speed
ns
-15
-15
-17
-17
-20
-20
-25
-25
-35
-35
-45
-45
*AVAILABLE PROCESSES
IT = Industrial Temperature Range
XT = Extended Temperature Range
883C = Full Military Processing
Process
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
-40oC to +85oC
-55oC to +125oC
-55oC to +125oC
PACKAGE NOTES
P = Pins 8, 21, 28, and 39 are grounds.
PN = Pins 8, 21, 28, and 39 are no connects.
AS8S128K32
Rev. 3.5 7/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
10
SRAM
Austin Semiconductor, Inc.
AS8S128K32
ASI TO DSCC PART NUMBER
CROSS REFERENCE
ASI Package Designator Q
ASI Part #
SMD Part #
AS8S128K32Q-55/883C
AS8S128K32Q-55/883C
AS8S128K32Q-45/883C
AS8S128K32Q-45/883C
AS8S128K32Q-35/883C
AS8S128K32Q-35/883C
AS8S128K32Q-25/883C
AS8S128K32Q-25/883C
AS8S128K32Q-20/883C
AS8S128K32Q-20/883C
AS8S128K32Q-17/883C
AS8S128K32Q-17/883C
5962-9559505HMA
5962-9559505HMC
5962-9559506HMA
5962-9559506HMC
5962-9559507HMA
5962-9559507HMC
5962-9559508HMA
5962-9559508HMC
5962-9559509HMA
5962-9559509HMC
5962-9559510HMA
5962-9559510HMC
ASI Package Designator P & PN
ASI Part #
AS8S128K32P-55/883C
AS8S128K32P-55/883C
AS8S128K32P-45/883C
AS8S128K32P-45/883C
AS8S128K32P-35/883C
AS8S128K32P-35/883C
AS8S128K32P-25/883C
AS8S128K32P-25/883C
AS8S128K32P-20/883C
AS8S128K32P-20/883C
AS8S128K32P-17/883C
AS8S128K32P-17/883C
SMD Part #
ASI Part #
5962-9318705H5A
5962-9318705H5C
5962-9318706H5A
5962-9318706H5C
5962-9318707H5A
5962-9318707H5C
5962-9318708H5A
5962-9318708H5C
5962-9318709H5A
5962-9318709H5C
5962-9318710H5A
5962-9318710H5C
AS8S128K32PN-55/883C
AS8S128K32PN-55/883C
AS8S128K32PN-45/883C
AS8S128K32PN-45/883C
AS8S128K32PN-35/883C
AS8S128K32PN-35/883C
AS8S128K32PN-25/883C
AS8S128K32PN-25/883C
AS8S128K32PN-20/883C
AS8S128K32PN-20/883C
AS8S128K32PN-17/883C
AS8S128K32PN-17/883C
SMD Part #
5962-9318705H4A
5962-9318705H4C
5962-9318706H4A
5962-9318706H4C
5962-9318707H4A
5962-9318707H4C
5962-9318708H4A
5962-9318708H4C
5962-9318709H4A
5962-9318709H4C
5962-9318710H4A
5962-9318710H4C
Please note, -15 not currently available on the SMD's.
AS8S128K32
Rev. 3.5 7/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
11