SOT23 SILICON EPITAXIAL SCHOTTKY BARRIER SINGLE AND DUAL DIODES ISSUE 3– JULY 95 PARTMARKING DETAILS Single Diode – L4Z Common Anode – L42 Series – L43 Common Cathode – L44 BAT54 ✪ Series Common Anode Single Diode 1 1 Common Cathode 1 1 FEATURES Low VF High current capability APPLICATIONS P.S.U. Mobile telecomms. & SCSI 2 3 3 BAT54A BAT54 3 2 2 BAT54S 3 BAT54C ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Continuous Reverse Voltage VR 30 V Forward Current IF 200 mA Forward Voltage VF 400 mV Power Dissipation at T amb=25°C P tot 330 mW Operating and Storage Temperature Range T j:T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Reverse Breakdown Voltage V (BR)R 30 Forward Voltage VF TYP. 500 MAX. UNIT CONDITIONS. V I R=10mA 240 320 400 500 1000 mV mV mV mV mV I F=0.1mA I F=1mA I F=10mA I F=30mA I F=100mA Reverse Current IR 4 A V R=25V Diode Capacitance CD 10 pF f=1MHz,V R=1V Reverse Recover Time t rr 5 ns switched from I F=10mA to I R=10mA R L=100 , Measured at I R=1mA