ETC BC847BV

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
BC847BV
NPN general purpose double
transistor
Product specification
2001 Sep 10
Philips Semiconductors
Product specification
NPN general purpose double transistor
FEATURES
BC847BV
PINNING
• 300 mW total power dissipation
PIN
• Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin
package
1, 4
emitter
TR1; TR2
2, 5
base
TR1; TR2
6, 3
collector
TR1; TR2
handbook, halfpage
6
5
• Excellent coplanarity due to straight leads
• Low collector capacitance
DESCRIPTION
• Improved thermal behaviour due to flat leads
• Reduces number of components as replacement of two
SC-75/SC-89 packaged BISS transistors
• Reduces required board space
• Reduces pick and place costs.
4
6
5
APPLICATIONS
4
TR2
TR1
• General purpose switching and amplification.
1
DESCRIPTION
2
1
3
2
3
MAM447
Top view
NPN double transistor in a SOT666 plastic package.
PNP complement: BC857BV.
MARKING
TYPE NUMBER
BC847BV
2001 Sep 10
MARKING CODE
Fig.1 Simplified outline (SOT666) and symbol.
1F
2
Philips Semiconductors
Product specification
NPN general purpose double transistor
BC847BV
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
VCBO
collector-base voltage
open emitter
−
50
VCEO
collector-emitter voltage
open base
−
45
V
VEBO
emitter-base voltage
open collector
−
5
V
IC
collector current (DC)
−
100
mA
ICM
peak collector current
−
200
mA
IBM
peak base current
−
200
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
−
300
mW
Tamb ≤ 25 °C; note 1
V
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
notes 1 and 2
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
2001 Sep 10
3
VALUE
UNIT
416
K/W
Philips Semiconductors
Product specification
NPN general purpose double transistor
BC847BV
CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor
−
IE = 0; VCB = 30 V
−
ICBO
collector-base cut-off current
15
nA
IE = 0; VCB = 30 V; Tj = 150 °C
−
−
5
µA
IEBO
emitter-base cut-off current
IC = 0; VEB = 5 V
−
−
100
nA
hFE
DC current gain
IC = 2 mA; VCE = 5 V
200
−
450
VBE
base-emitter voltage
IC = 2 mA; VCE = 5 V
580
655
700
mV
VCEsat
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA
−
−
100
mV
IC = 100 mA; IB = 5 mA; note 1
−
−
300
mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA
−
755
−
mV
Cc
collector capacitance
IE = Ie = 0; VCB = 10 V; f = 1 MHz
−
−
1.5
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 500 mV;f = 1 MHz −
11
−
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz 100
−
−
MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MBH724
300
handbook, full pagewidth
VCE = 5 V
hFE
200
100
0
10−2
10−1
1
10
Fig.2 DC current gain; typical values.
2001 Sep 10
4
102
IC (mA)
103
Philips Semiconductors
Product specification
NPN general purpose double transistor
BC847BV
Graphical information BC847BV
MHB971
600
MHB972
1200
BE
(mV)
1000
handbook, halfpage
handbook,
halfpage
V
hFE
(1)
500
800
400
(1)
(2)
300
600
200
400
(2)
(3)
(3)
100
200
0
10−1
1
10
102
0
10−2
103
10−1
1
10
IC (mA)
VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4
Fig.3 DC current gain; typical values.
MHB973
104
handbook, halfpage
VCEsat
(mV)
1200
BEsat
(mV)
1000
103
800
102
103
IC (mA)
Base-emitter voltage as a function of
collector current; typical values.
MHB974
handbook,
halfpage
V
(1)
(2)
600
(3)
102
400
(1)
200
(2)
(3)
10
10−1
1
10
102
IC (mA)
0
10−1
103
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
IC/IB 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.5
Fig.6
Collector-emitter saturation voltage as a
function of collector current; typical values.
2001 Sep 10
5
1
10
102
IC (mA)
103
Base-emitter saturation voltage as a
function of collector current; typical values.
Philips Semiconductors
Product specification
NPN general purpose double transistor
BC847BV
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT666
D
E
A
X
Y S
S
HE
6
5
4
pin 1 index
A
1
2
e1
c
3
bp
w M A
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
w
y
mm
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.0
0.5
1.7
1.5
0.3
0.1
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
01-01-04
01-08-27
SOT666
2001 Sep 10
EUROPEAN
PROJECTION
6
Philips Semiconductors
Product specification
NPN general purpose double transistor
BC847BV
DATA SHEET STATUS
DATA SHEET STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Sep 10
7
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected]
© Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp8
Date of release: 2001
Sep 10
Document order number:
9397 750 08589