ETC BF959ZL1

BF959
VHF Transistor
NPN Silicon
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MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
20
Vdc
Collector–Base Voltage
VCBO
30
Vdc
Emitter–Base Voltage
VEBO
3.0
Vdc
Collector Current – Continuous
IC
100
mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
–55 to
+150
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
COLLECTOR
1
3
BASE
2
EMITTER
1
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction to Ambient
RθJA
200
°C/W
Thermal Resistance,
Junction to Case
RθJC
83.3
°C/W
3
TO–92
CASE 29
STYLE 21
MARKING DIAGRAM
BF
959
YWW
Y
W
= Year
= Work Week
ORDERING INFORMATION
Device
 Semiconductor Components Industries, LLC, 2001
October, 2001 – Rev. 2
1
Package
Shipping
BF959
TO–92
5000 Units/Box
BF959ZL1
TO–92
2000/Ammo Pack
BF959RL1
TO–92
2000 Units/Box
Publication Order Number:
BF959/D
BF959
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
20
–
–
Vdc
Collector–Base Breakdown Voltage (IC = 10 Adc, IE = 0)
V(BR)CBO
30
–
–
Vdc
Emitter–Base Breakdown Voltage (IE = 10 Adc, IC = 0)
V(BR)EBO
3.0
–
–
Vdc
ICBO
–
–
100
nAdc
35
40
–
–
–
–
OFF CHARACTERISTICS
Collector Cutoff Current (VCB = 20 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 mAdc, VCE = 10 Vdc)
(IC = 20 mAdc, VCE = 10 Vdc)
hFE
–
Collector–Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc)
VCE(sat)
–
–
1.0
Vdc
Base–Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc)
VBE(sat)
–
–
1.0
Vdc
700
600
–
–
–
–
Cre
–
0.65
–
pF
Nf
–
3.0
–
dB
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
(IC = 30 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT
Common Emitter Feedback Capacitance
(VCB = 10 Vdc, Pf = 0, f = 10 MHz)
Noise Figure (IC = 4.0 mA, VCE = 10 V, RS = 50 Ω, f = 200 MHz)
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2
MHz
BF959
500
1000
200
200
100
100
mV
hFE , DC CURRENT GAIN
500
50
40
30
50
40
30
20
20
1
2
3
4 5
10
20
30
50
10
100
1.6
1.6
1.4
1.4
1.2
1
0.8
2V
0.6
3
4 5
10
20
10 V
5V
20
30 40 50
1.2
0.8
100
Cre
1
2
3
4 5
10
20
30
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Current–Gain – Bandwidth Product
Figure 4. Capacitances
b22e
300
200
Y22e ( µs)
VCE = 10 V
2
50
Cob
IC, COLLECTOR CURRENT (mA)
g11e
50
0.6
0.2
100
30
Cib
1
500
5
4
3
Y11e (ms)
10
0.4
10
b11e
1
0.5
0.4
0.3
g22e
VCE = 10 V
100
50
40
30
20
0.2
0.1
4 5
Figure 2. VCE(sat) at IC/IB = 10
1.8
2
3
Figure 1. hFE at 10 V
1.8
1
2
IC, COLLECTOR CURRENT (mA)
2.0
0.4
1
IC, COLLECTOR CURRENT (mA)
C, CAPACITANCE (pF)
f,
T CURRENT-GAIN BANDWIDTH PRODUCT (GHz)
10
1
2
3
4 5
10
20
30
50
10
100
1
2
3
4 5
10
20
30
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 5. Input Impedance at 30 MHz
Figure 6. Output Impedance at 30 MHz
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3
50
BF959
PACKAGE DIMENSIONS
TO–92
TO–226AA
CASE 29–11
ISSUE AL
A
B
R
P
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
L
SEATING
PLANE
K
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
D
X X
G
J
H
V
C
SECTION X–X
1
N
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
STYLE 21:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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PUBLICATION ORDERING INFORMATION
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P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
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4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: r14525@onsemi.com
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For additional information, please contact your local
Sales Representative.
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
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4
BF959/D