DISCRETE SEMICONDUCTORS DATA SHEET BLT50 UHF power transistor Product specification File under Discrete Semiconductors, SC08b April 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. BLT50 QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common emitter class-B test circuit (note 1). MODE OF OPERATION c.w. narrow band DESCRIPTION f (MHz) VCE (V) PL (W) Gp (dB) ηc (%) 470 1.2 > 10 > 55 7.5 Note NPN silicon planar epitaxial transistor encapsulated in a SOT223 surface mounted envelope and designed primarily for use in hand-held radio equipment in the 470 MHz communications band. 1. Ts = temperature at soldering point of collector tab. PIN CONFIGURATION 4 age PINNING - SOT223 c PIN DESCRIPTION 1 emitter 2 base 3 emitter 4 collector handbook, halfpage b MBB012 1 2 Top view 3 MSB002 - 1 Fig.1 Simplified outline and symbol. April 1991 2 e Philips Semiconductors Product specification UHF power transistor BLT50 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 10 V VEBO emitter-base voltage open collector − 3 V IC, IC(AV) collector current DC or average value − 500 mA ICM collector current peak value f > 1 MHz − 1.5 A Ptot total power dissipation f > 1 MHz; Ts = 103 °C (note 1) − 2 W Tstg storage temperature range −65 150 °C Tj operating junction temperature − 175 °C Note 1. Ts = temperature at soldering point of collector tab. MEA217 1 handbook, halfpage IC (A) 0.5 0.2 0.1 1 10 VCE (V) 102 Ts = 103 °C. Fig.2 DC SOAR. THERMAL RESISTANCE SYMBOL Rth j-s(DC) April 1991 PARAMETER CONDITIONS from junction to soldering point 3 Ptot = 2 W; Ts = 103 °C MAX. 36 UNIT K/W Philips Semiconductors Product specification UHF power transistor BLT50 CHARACTERISTICS Tj = 25 °C. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC = 5 mA 20 − − V V(BR)CEO collector-emitter breakdown voltage open base; IC = 10 mA 10 − − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 1 mA 3 − − V ICES collector-emitter leakage current VBE = 0; VCE = 10 V − − 250 µA hFE DC current gain VCE = 5 V; IC = 300 mA 25 − − ESBR second breakdown energy L = 25 mH; RBE = 10 Ω; f = 50 Hz 0.55 − − mJ Cc collector capacitance VCB = 7.5 V; IE = Ie = 0; f = 1 MHz − 4.7 6 pF Cre feedback capacitance VCE = 7.5 V; IC = 0; f = 1 MHz − 2.9 4.5 pF MEA218 handbook,10 halfpage Cc (pF) 8 6 4 2 0 0 2 4 6 8 10 VCB (V) IE = ie = 0; f = 1 MHz. Fig.3 April 1991 Collector capacitance as a function of collector-base voltage, typical values. 4 Philips Semiconductors Product specification UHF power transistor BLT50 APPLICATION INFORMATION RF performance at Ts ≤ 60 °C in a common emitter class-B test circuit. MODE OF OPERATION f (MHz) c.w. narrow band 470 VCE (V) PL (W) 7.5 1.2 ηc (%) Gp (dB) > 10 typ. 11.2 > 55 typ. 65 MEA219 MEA220 2 handbook, halfpage handbook,16 halfpage Gp (dB) 100 PL (W) η 12 (%) Gp 80 8 1 η 60 4 40 0 0.6 1.0 1.4 1.8 0 2.2 0 100 PL (W) VCE = 7.5 V; f = 470 MHz. Fig.4 200 VCE = 7.5 V; f = 470 MHz. Gain and efficiency as functions of load power, typical values. Fig.5 Ruggedness in class-B operation The BLT50 is capable of withstanding a load mismatch corresponding to VSWR = 50:1 through all phases at rated output power, up to a supply voltage of 9 V, f = 470 MHz and Ts ≤ 60 °C, where Ts is the temperature at the soldering point of the collector tab. April 1991 PD (mW) 5 Load power as a function of drive power, typical values. Philips Semiconductors Product specification UHF power transistor C1 handbook, full pagewidth 50 Ω BLT50 ,,, ,,, L4 L1 C4 L5 50 Ω TUT C2 L2 L6 C3 L7 +VCC R1 R2 L3 C5 C6 C7 MBA576 Fig.6 Class-B test circuit at f = 470 MHz. List of components (see test circuit) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1 film dielectric trimmer 1.4 to 5.5 pF 2222 809 09004 C2 film dielectric trimmer 1.4 to 5.5 pF 2222 809 09001 C3 film dielectric trimmer 2 to 9 pF 2222 809 09002 C4 film dielectric trimmer 2 to 9 pF 2222 809 09005 C5 multilayer ceramic chip capacitor (note 1) 100 pF C6 multilayer ceramic chip capacitor (note 1) 1 nF C7 63 V electrolytic capacitor 2.2 µF L1 stripline (note 2) 50 Ω L2 5 turns enamelled 0.4 mm copper wire L3, L7 grade 3B1 Ferroxcube wideband RF choke L4 stripline (note 2) L5 1 turn enamelled 1.4 mm copper wire 5 nH int. dia. 4 mm L6 3 turns enamelled 0.4 mm copper wire int. dia. 3 mm R1, R2 0.25 W metal film resistor 54 mm × 4.7 mm int. dia. 3 mm 4312 020 36640 50 Ω 36 mm × 4.7 mm 10 Ω, 5% Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are mounted on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.2); thickness 1⁄16 inch. April 1991 6 Philips Semiconductors Product specification UHF power transistor BLT50 handbook, full pagewidth VCC L7 C7 L3 C6 C5 R2 R1 C1 L6 L2 C2 C3 C4 L4 L1 L5 MBA575 140 mm handbook, full pagewidth strap strap 80 mm rivets (14x) strap mounting screws (8x) strap MBA574 The circuit and components are situated on one side of a copper-clad PTFE fibre-glass board; the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by means of fixing screws, hollow rivets and copper foil straps, as shown. Fig.7 Component layout for 470 MHz class-B test circuit. April 1991 7 Philips Semiconductors Product specification UHF power transistor BLT50 MEA221 MEA222 4 handbook, halfpage handbook,20 halfpage Zi (Ω) ZL (Ω) 3 15 ri 2 XL 10 xi RL 1 5 0 350 550 450 f (MHz) 0 350 650 450 550 Class-B operation; VCE = 7.5 V; PL = 1.2 W. Class-B operation; VCE = 7.5 V; PL = 1.2 W. Fig.8 Fig.9 Input impedance (series components) as a function of frequency, typical values. f (MHz) 650 Load impedance (series components) as a function of frequency, typical values. MEA223 handbook,16 halfpage Gp (dB) 12 handbook, halfpage 8 Zi 4 ZL MBA451 0 350 450 550 f (MHz) 650 Class-B operation; VCE = 7.5 V; PL = 1.2 W. Fig.10 Definition of transistor impedance. April 1991 Fig.11 Power gain as a function of frequency, typical values. 8 Philips Semiconductors Product specification UHF power transistor BLT50 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 96-11-11 97-02-28 SOT223 April 1991 EUROPEAN PROJECTION 9 Philips Semiconductors Product specification UHF power transistor BLT50 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1991 10