ETC CMBT2222A

IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
IS / IECQC 700000
IS / IECQC 750100
An IS/ISO 9002 and IECQ Certified Manufacturer
SOT-23 Formed SMD Package
CMBT2222
CMBT2222A
SILICON PLANAR EPITAXIAL TRANSISTORS
N–P–N silicon transistors
Marking
CMBT2222 = lB
CMBT2222A = lP
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
CMBT2222
Collector–base voltage (open ernitter)
VCB0
Collector–emitter voltage (open base)
VCE0
Emitter base voltage (open collector)
VEB0
Collector current (d.c.)
IC
Total power dissipation up to Tamb = 25 °C Ptot
D.C. current gain
hFE
IC = 150mA; VCE = 10V
hFE
lC = 500mA; VCE = 10V
Transition frequency at f = 100 MHz
fT
IC = 20 mA; VCE = 20 V
Continental Device India Limited
Data Sheet
CMBT2222A
max.
max.
max.
max.
max.
60
30
5,0
75
40
6,0
>
30
40
>
250
300
600
250
V
V
V
mA
mW
100 to 300
MHz
Page 1 of 4
CMBT2222
CMBT2222A
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
CMBT2222
Collector–base voltage (open emitter)
VCBO
Collector–emitter voltage (open base)
VCEO
Emitter–base voltage (open collector)
VEBO
Collector current (d.c,)
IC
Total power dissipation up to Tamb = 25 °C Ptot
Storage temperature range
Tstg
Junction temperature
Tj
THERMAL RESISTANCE
From junction to ambient
max.
rnax.
max.
max.
max.
CMBT2222A
60
30
5,0
max.
75
40
6,0
V
V
V
mA
600
250
–55 to +150
150
°C
°C
500
K/W
Rth j–a
mW
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector cut–off current
IE = 0; VCB = 50 V
IE = 0; VCB = 60 V
IE = 0; VCB = 50 V; Ti – 125 °C
IE = 0; VCB = 60 V; Tj = 125 °C
VEB = 3 V; VCE = 60 V
Base current
with reverse biased emitter junction
VFB = 3V; VCE = 60V
Emitter cut–off current
IC = 0; VEB = 3V
Saturation voltages
IC = 150 mA; lB = 15 mA
IC = 500 mA; lB = 50 mA
Breakdown voltages
IC = 1,0mA; IB = 0
IC = 100mA; IE = 0
IC = 0; IE = 10mA
Continental Device India Limited
CMBT2222
CMBT2222A
0,01
–
10
–
–
–
0,01
–
10
10
mA
mA
mA
mA
nA
ICBO
ICBO
ICBO
ICBO
ICEX
<
<
<
<
<–
IBEX
<
–
20
nA
IEBO
<
–
10
nA
VCEsat <
VBEsat <
VBEsat
400
1.3
–
VCEsat <
VBEsat <
1.6
2.6
1.0
2.0
V
V
V(BR)CEO >
V(BR)CBO >
V(BR)EBO >
30
60
5,0
40
75
6,0
V
V
V
Data Sheet
300
mV
–
V
0,6 to 1,2 V
Page 2 of 4
CMBT2222
CMBT2222A
CMBT2222
D.C. current gain
hFE
IC = 0,1 mA; VCE = 10V
hFE
IC = 1 mA; VCE = 10V
hFE
lC = 10 mA; VCE = 10 V
lC = 10 mA; VCE = 10 V; Tamb = –55 °C hFE
hFE
IC = 150mA; VCE = 10V
IC = 150 mA; VCE = 1 V
hFE
hFE
IC = 500 mA; VCE = 10 V
>
>
>
>
CMBT2222A
35
50
75
35
100 to 300
50
>
>
30
40
fT
>
250
300
Co
<
Ci
<
F
<
4,0
dB
Transition frequency at f = 100 MHz
IC = 20 mA; VCE = 20 V
Output capacitance at f = 1 MHz
IE = 0; VCB = 10V
Input capacitance at f = 1 MHz
IC = 0; VEB = 0,5V
Noise figure at RS = 1 kW
IC = 100mA; VCE = 10V; f = 1 kHz
Switching times (between 10% and 90% levels)
Turn–on time switched to Ic = 150 mA
delay time
rise time
Turn–off time switched from Ic = 150 mA
storage time
fall time
td
tr
<
<
10
25
ns
ns
ts
tf
<
<
225
60
ns
ns
Small Signal Current Gain
VCE = 10V; IC = 1 mA; f = 1 KHz
hfe
>
<
50
300
VCE = 10V; IC = 10mA; f = 1 KHz
hfe
>
<
75
375
Continental Device India Limited
Data Sheet
8,0
30
MHz
pF
25
pF
Page 3 of 4
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail [email protected]
www.cdil.com
Continental Device India Limited
Data Sheet
Page 4 of 4