ETC CMBT5089

IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
IS / IECQC 700000
IS / IECQC 750100
An IS/ISO 9002 and IECQ Certified Manufacturer
SOT-23 Formed SMD Package
CMBT5088
CMBT5089
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
N–P–N transistors
Marking
CMBT5088 = 1Q
CMBT5089 = 1R
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
5088
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Collector current
Total power dissipation up to Tamb = 25 °C
Junction temperature
Collector-emitter saturation voltage
IC = 10 mA; IB = 1 mA
D.C. current gain
IC = 100 µA; VCE = 5 V
Transition frequency at f = 20 MHz
IC = 500 µA; VCE = 5 V
VCB0
VCE0
IC
Ptot*
Tj
max.
max.
max.
max.
max.
VCEsat
max.
hFE
min. 300
max. 900
fT
min.
5089
35
30
50
225
150
30 V
25 V
mA
mW
°C
0.5
V
400
1200
50
MHz
*FR-5 Board = 1.0 × 0.75 × 0.062 in.
Continental Device India Limited
Data Sheet
Page 1 of 3
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
VCBO
Collector–emitter voltage (open base)
VCEO
Emitter-base voltage (open collector)
VEBO
Collector current (d.c.)
IC
Ptot*
Total power dissipation up to Tamb = 25 °C
Storage temperature
Tstg
Junction temperature
Tj
THERMAL RESISTANCE
From junction to ambient
35
30
max.
5089
30 V
25 V
4.5
V
50
mA
225
mW
–55 to +150 ° C
150
°C
417
Rth j–a
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified
Collector cut–off current
IE = 0; VCB = 20 V
IE = 0; VCB = 15V
Emitter cut–off current
IC = 0; VEB = 3 V
IC = 0; VEB = 4.5V
Saturation voltages
IC = 10 mA; IB = 1 mA
Collector capacitance at f = 100 KHz
Emitter guarded
IE = 0; VCB = 5V
Emitter capacitance at f = 100 KHz
Emitter guarded
IC = 0; VEB = 0.5V
D.C. current gain
IC = 0.1 mA; VCE = 5 V
IC = 1.0 mA; VCE = 5 V
IC = 10 mA; VCE = 5 V
Small signal current gain
IC = 1 mA; VCE = 5V; f = 1 KHz
Transition frequency at f = 20 MHz
IC = 500 µA; VCE = 5 V
Noise figure at RS = 10 kW
IC = 100 mA; VCE = 5 V
f = 10 Hz to 15.7 Hz
5088
max.
max.
max.
max.
max.
5088
°C/W
5089
ICBO
<
<
50
–
– nA
50 nA
IEBO
<
<
50
–
– nA
100 nA
VCEsat
VBEsat
<
<
500
800
mV
mV
Ccb
<
4.0
pF
C eb
<
10
pF
hFE
hFE
hFE
>
>
hfe
fT
>
NF
<
300-900
350
300
400-1200
450
400
350-1400
450-1800
50
3.0
MHz
2.0 dB
*FR-5 Board = 1.0 × 0.75 × 0.62 in.
Continental Device India Limited
Data Sheet
Page 2 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail [email protected]
www.cdil.com
Continental Device India Limited
Data Sheet
Page 3 of 3