Reflective Photosensors (Photo Reflectors) CNB1304H (ON2175) Reflective Photosensor Unit : mm (R2.3) 4.0±0.3 ø2.2±0.3 2-ø1.2±0.15 (4-R0.3) Overview CNB1304H is a sensor which consists of a high efficiency GaAs infrared light emitting diode and a high sensitivity Si phototransistor which are arranged together in the same direction. It detects the beginning and end of a tape based on changes in the amount of light reflected from a prism which is situated outside of the sensor. 5.0 +0 –0.3 6.5±0.3 8.3±0.3 6.0±0.15 Tape end sensor for DAT Fast response Small size and light weight ;; ; ;;;; Features 2-ø1.2±0.15 (C0.3) ø1.2 +0 –0.3 2-0.4±0.2 (3.75) 4 2 3 1 3.0±0.3 5.0 min. 8.3±0.3 1.0±0.3 4.0±0.3 (C0.2) 3.75±0.15 8.0 +0 –0.3 7.0±0.3 2-0.15 +0.2 –0.1 (3.75) Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation Collector current VR Unit 3 IF 50 mA PD*1 75 mW IC 20 mA Output (Photo Collector to emitter voltage transistor) Emitter to collector voltage VCEO 30 V VECO 5 V Collector power dissipation PC*2 100 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C Temperature *1 *2 1 V 2 3 4 Pin connection (Note) ( ) Dimension is reference Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C. Output power derating ratio is 1.34 mW/˚C at Ta ≥ 25˚C. Electrical Characteristics (Ta = 25˚C) Parameter Symbol Conditions min typ max Unit Forward voltage (DC) Input characteristics Reverse current (DC) VF IF = 50mA 1.5 V IR VR = 3V 10 µA Output characteristics Collector cutoff current ICEO VCE = 10V IC*1 VCE = 5V, IF = 20mA, RL = 100Ω Collector current Transfer Response time tr , tf*2 VCC = 10V, IC = 0.5mA, RL = 100Ω characteristics Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 0.1mA *1 I C *2 Measurement method (Unit : mm ) 2– 1.5 CNB1304 Sig.IN µA µs 6 0.5 V Switching time measurement circuit VCC 2.5 1 (Input pulse) Sig.OUT ;; ;;;; ;;;;;;;;; ;;;;;; 1 µA 0.2 30 50Ω prism RL (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector current to decrease from 90% to 10% of its initial value) Note) The part number in the parenthesis shows conventional part number. 1 Caution for Safety Gallium arsenide material (GaAs) is used in this product. DANGER Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. 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