IGBT FM2G75US60 Molding Type Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is required. Features • • • • • Short Circuit rated 10us @ TC = 100°C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 75A High Input Impedance Fast & Soft Anti-Parallel FWD Package Code : 7PM-AA Application • • • • • E1/C2 AC & DC Motor Controls General Purpose Inverters Robotics Servo Controls UPS C1 E2 G1 E1 G2 E2 Internal Circuit Diagram Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg Viso Mounting Torque TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Curent Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Isolation Voltage Power Terminals Screw : M5 Mounting Screw : M5 @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ AC 1minute FM2G75US60 600 ± 20 75 150 75 150 10 310 -40 to +150 -40 to +125 2500 2.0 2.0 Units V V A A A A us W °C °C V N.m N.m Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature ©2000 Fairchild Semiconductor International FM2G75US60 Rev. A FM2G75US60 September 2000 Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 -- -- V VGE = 0V, IC = 1mA -- 0.6 -- V/°C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 250 ± 100 uA nA 5.0 -- 8.5 V IC = 75A, VGE = 15V -- 2.2 2.8 V VCE = 30V, VGE = 0V, f = 1MHz ---- 7056 672 180 ---- pF pF pF --------------- 24 41 120 87 2.4 1.8 4.2 27 43 175 124 2.6 2.7 5.3 --150 200 ----------- ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ VCC = 300 V, VGE = 15V 100°C 10 -- -- us VCE = 300 V, IC = 75A, VGE = 15V ---- 310 62 130 350 --- nC nC nC Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 0V, IC = 75mA Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Tsc Short Circuit Withstand Time Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge ©2000 Fairchild Semiconductor International VCC = 300 V, IC = 75A, RG = 3.3Ω, VGE = 15V Inductive Load, TC = 25°C VCC = 300 V, IC = 75A, RG = 3.3Ω, VGE = 15V Inductive Load, TC = 125°C @ TC = FM2G75US60 Rev. A FM2G75US60 Electrical Characteristics of IGBT T C Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge = 25°C unless otherwise noted Test Conditions TC = 25°C IF = 75A TC = 100°C IF = 75A di / dt = 150 A/us Min. -- Typ. 1.9 Max. 2.8 -- 1.8 -- TC = 25°C -- 90 130 TC = 100°C -- 130 -- TC = 25°C -- 7 9 TC = 100°C -- 10 -- TC = 25°C -- 315 590 TC = 100°C -- 650 -- Units V ns A nC Thermal Characteristics Symbol RθJC RθJC RθCS Weight Parameter Junction-to-Case (IGBT Part, per 1/2 Module) Junction-to-Case (DIODE Part, per 1/2 Module) Case-to-Sink (Conductive grease applied) Weight of Module ©2000 Fairchild Semiconductor International Typ. --0.05 -- Max. 0.4 0.9 -190 Units °C/W °C/W °C/W g FM2G75US60 Rev. A FM2G75US60 Electrical Characteristics of DIODE T 200 Common Emitter TC = 25℃ 180 20V 15V Common Emitter V GE = 15V T C = 25℃ T C = 125℃ 12V Collector Current, I C [A] 160 Collector Current, I C [A] FM2G75US60 200 140 120 Vge = 10V 100 80 60 40 160 120 80 40 20 0 0 0 2 4 6 8 0.3 Collector - Emitter Voltage, VCE [V] 20 Fig 2. Typical Saturation Voltage Characteristics 5 100 V CC = 300V Load Current : peak of square wave Common Emitter V GE = 15V 4 80 Load Current [A] 150A 3 75A 2 IC = 40A 1 60 40 20 0 Duty cycle : 50% Tc = 100℃ Power Dissipation = 100W 0 0 30 60 90 120 150 0.1 1 10 Case Temperature, Tc [℃] 100 1000 Frequency [Khz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 20 Common Emitter TC = 125℃ Collector - Emitter Voltage, V CE [V] Common Emitter TC = 25℃ Collector - Emitter Voltage, V CE [V] 10 Collector - Emitter Voltage, V CE [V] Fig 1. Typical Output Characteristics Collector - Emitter Voltage, V CE [V] 1 16 12 8 150A 4 75A Ic = 40A 0 16 12 8 150A 75A 4 Ic = 40A 0 0 4 8 12 16 Gate - Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE ©2000 Fairchild Semiconductor International 20 0 4 8 12 16 20 Gate - Emitter Voltage, V GE [V] Fig 6. Saturation Voltage vs. VGE FM2G75US60 Rev. A 1000 Common Emitter V GE = 0V, f = 1MHz T C = 25℃ 14000 Common Emitter V CC = 300V, VGE = ± 15V IC = 75A T C = 25℃ T C = 125℃ Switching Time [ns] Capacitance [pF] 12000 Cies 10000 8000 6000 Coes 4000 FM2G75US60 16000 Ton Tr 100 Cres 2000 10 0 1 1 10 10 100 Gate Resistance, R G [Ω ] Collector - Emitter Voltage, V CE [V] Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance 1000 10000 Toff 100 Common Emitter VCC = 300V, V GE = ± 15V IC = 75A TC = 25℃ TC = 125℃ Eon Switching Loss [uJ] Switching Time [ns] 20000 Common Emitter V CC = 300V, VGE = ± 15V IC = 75A T C = 25℃ T C = 125℃ Eoff Tf 1000 10 1 100 10 Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 300 1000 Common Emitter V CC = 300V, V GE = ± 15V RG = 3.3Ω T C = 25℃ T C = 125℃ 100 Common Emitter V CC = 300V, V GE = ± 15V RG = 3.3Ω T C = 25℃ T C = 125℃ Switching Time [ns] Switching Time [ns] 100 Gate Resistance, Rg [Ω ] Gate Resistance, RG [Ω ] Ton Tr Toff 100 Tf 10 20 30 40 50 60 Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2000 Fairchild Semiconductor International 70 75 20 30 40 50 60 70 75 Collector Current, IC [A] Fig 12. Turn-Off Characteristics vs. Collector Current FM2G75US60 Rev. A Gate - Emitter Voltage, V GE [ V ] Switching Loss [uJ] 15 Common Emitter V CC = 300V, V GE = ± 15V RG = 3.3 Ω T C = 25℃ T C = 125℃ Eoff 1000 FM2G75US60 10000 Eoff Eon Eon Common Emitter RL = 4 Ω T C = 25℃ 12 300 V 9 200 V V CC = 100 V 6 3 0 100 20 30 40 50 60 70 75 0 50 100 Collector Current, IC [A] 150 200 250 300 350 Gate Charge, Qg [ nC ] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 500 IC MAX. (Pulsed) IC MAX. (Continuous) 100 50us 100us Collector Current, I C [A] Collector Current, I C [A] 100 1㎳ 10 DC Operation Single Nonrepetitive Pulse TC = 25℃ Curves must be derated linerarly with increase in temperature 1 0.1 10 Safe Operating Area o V GE = 20V, TC = 100 C 1 0.3 1 10 100 1000 1 10 100 1000 Collector-Emitter Voltage, V CE [V] Collector-Emitter Voltage, VCE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics 500 Thermal Response, Zthjc [℃/W] 1 Collector Current, I C [A] 100 10 1 0.1 Single Nonrepetitive Pulse TJ ≤ 125℃ V GE = 15V RG = 3.3 Ω 0 100 200 300 400 500 Collector-Emitter Voltage, VCE [V] Fig 17. RBSOA Characteristics ©2000 Fairchild Semiconductor International 600 700 0.1 0.01 T C = 25℃ IGBT : DIODE : 1E-3 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] Fig 18. Transient Thermal Impedance FM2G75US60 Rev. A Peak Reverse Recovery Current I rr [A] Reverse Recovery Time Trr [x10ns] Common Cathode VGE = 0V TC = 25℃ TC = 125℃ 160 Forward Current, I F [A] FM2G75US60 20 200 120 80 40 0 0 1 2 Forward Voltage, V F [V] Fig 19. Forward Characteristics ©2000 Fairchild Semiconductor International 3 4 T rr 10 Irr 5 Common Cathode di/dt = 150A/㎲ T C = 25℃ T C = 100℃ 2 0 10 20 30 40 50 60 70 80 Forward Current, IF [A] Fig 20. Reverse Recovery Characteristics FM2G75US60 Rev. A FM2G75US60 Package Dimension 30$$)63.*&2'(%' 12 E2 23 4 E1 E2 34 4 G2 17 C1 C2E1 G1 23 2-∅5.4 Mounting Hole 6.5 80±0.1 3-M5 DP8.5 93 7 16 TAP Terminal -110(t0.5) Max. 31.0 16 23.5 7 23 16 Dimensions in Millimeters ©2000 Fairchild Semiconductor International FM2G75US60 Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ POP™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. F1