HL6323MG AlGaInP Laser Diode ADE-208-1410 (Z) 1st Edition Mar. 2001 Description The HL6323MG is a 0.63 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a longer distance operating range for laser markers and a higher speed for positioning control sensors. The HL6323MG is packaged in the small can (φ5.6 mm), enabling end products to be kept small. Application • Laser markers • Measurement equipment Features • • • • High output power Visible light output Small package TM mode oscillation : 35 mW (CW) : λp = 639 nm Typ : φ5.6 mm Internal Circuit Pakage Type • HL6323MG: MG 1 3 PD LD 2 HL6323MG Absolute Maximum Ratings (TC = 25°C ± 3°C) Item Symbol Optical output power Value Unit 1 mW 2 35 * PO Optical output power (Puise) PO 50 * mW LD reverse voltage VR(LD) 2 V PD reverse voltage VR(PD) 30 V Operating temperature Topr −10 to +50 °C Storage temperature Tstg −40 to +85 °C Notes: 1. This value is not the same as the specification for long term reliability, such as lifetime. 2. Pulse condition : Pulse width pw = 100 ns , duty = 20% Optical and Electrical Characteristics (TC = 25°C ± 3°C) Item Symbol Min Typ Max Unit Test Condition Optical output power PO 35 mW Kink free * Optical output power (Puise) PO 50 mW Kink free * Threshold current Ith 30 45 65 mA Slope efficiency ηs 0.4 0.6 0.9 mW/mA 18(mW) / (I(24mW) – I (6mW)) Operating current I OP 95 130 mA PO = 30 mW Operating voltage VOP 2.3 2.8 V PO = 30 mW Beam divergence parallel to the junction θ// 7 8.5 11 deg. PO = 30 mW Beam divergence parpendicular to the junction θ⊥ 26 30 34 deg. PO = 30 mW Lasing wavelength λp 635 639 642 nm PO = 30 mW Monitor current IS 0.05 0.15 0.25 mA PO = 30 mW, VR(PD) = 5 V Note: Kink free is confirmed at the temperature of 25°C. 2 HL6323MG Typical Characteristic Curves 40 Monitor current, IS (mA) Optical output power, PO (mW) Opticai Output Power vs. Forward Current 50 TC = 25°C 30 TC = 0°C 20 TC = 50°C 10 0 40 120 160 80 Forward current, IF (mA) 0 Monitor Current vs. Optical Output Power 0.25 VR(PD) = 5V TC = 25°C 0.20 0.15 0.10 0.05 0 200 1.0 Slope efficiency, ηs (mW/mA) Threshold current, Ith (mA) 0 10 40 20 30 Case temperature, TC (°C) 50 40 50 30 20 10 Optical output power, PO (mW) Slope Efficiency vs. Case Temperature Threshold Current vs. Case Temperature 100 10 0 0.8 0.6 0.4 0.2 0 0 40 10 30 20 Case temperature, TC (°C) 50 3 HL6323MG Monitor Current vs. Case Temperature 0.25 Lasing wavelength, λp (nm) Monitor current, IS (mA) PO = 30mW VR(PD) = 5V 0.20 0.15 0.10 0.05 0 0 30 40 20 10 Case temperature, TC (°C) Lasing Wavelength vs. Case Temperature 646 PO = 30mW 644 642 640 638 636 634 632 630 50 Lasing Spectrum 0 50 Polarization Ratio vs. Optical Output Power 250 TC = 25°C NA = 0.4 TC = 25°C 200 Polarization ratio PO = 30mW Relative intensity 20 30 40 10 Case temperature, TC (°C) PO = 20mW PO = 10mW 150 100 50 PO = 5mW 630 4 640 Wavelength, λp (nm) 650 0 0 10 20 30 40 Optical output power, PO (mW) 50 HL6323MG Astigmatism vs. Optical Output Power 10 TC = 25°C NA = 0.4 Relative intensity 1.0 PO = 30mW 0.8 TC = 25°C Perpendicular 0.6 0.4 0.2 Parallel 0 −40 −30 −20 −10 0 10 20 Angle, θ (deg.) 30 Astigmatism, AS (µm) Far Field Pattern 8 6 4 2 40 0 0 10 20 30 40 50 Optical output power, PO (mW) Electrostatic Destruction (MIL standard) 100 Frequency Response 3dB/div PO = 3mW TC = 25°C Forward N = 5 pcs ∆IOP ≤ 10% Gain (dB) Survival rate (%) 80 60 40 20 1M 10M 100M Frequency (Hz) 1G 3G 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Applied voltage (kV) 5 HL6323MG Package Dimensions Unit: mm 0.4 +0.1 –0 φ 5.6 +0 –0.025 1.0 ± 0.1 (90°) (0.4) 0.25 φ 4.1 ± 0.3 φ 3.55 ± 0.1 Glass 2.3 ± 0.2 φ 1.6 ± 0.2 1.27 6.5 ± 1.0 1.2 ± 0.1 Emitting Point 3 – φ 0.45 ± 0.1 1 1 2 3 3 2 φ 2.0 ± 0.2 Hitachi Code JEDEC EIAJ Mass (reference value) 6 LD/MG — — 0.3 g HL6323MG Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. 1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam shall be observed or adjusted through infrared camera or equivalent. 7 HL6323MG Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Straße 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 3.0 8