PD-91800 IR2153Z SELF-OSCILLATING HALF-BRIDGE DRIVER Features · Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune · Undervoltage lockout · Programmable oscillator frequency f = · · · · 1 1.4 × (RT + 75Ω) × CT Product Summary VOFFSET Duty Cycle IO+/Vclamp 600V max. 50% 200 mA / 400 mA 15.6V Deadtime (typ.) 1.2 µs Matched propagation delay for both channels Micropower supply startup current of 90 µA. Shutdown function turns off both channels Low side output in phase with RT Description The IR2153Z is a high voltage, high speed, self-oscillating power MOSFET and IGBT driver with both high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The front end features a programmable oscillator which is similar to the 555 timer. The output drivers feature a high pulse current buffer stage and an internal deadtime designed for minimum driver crossconduction. Propagation delays for the two channels are matched to simplify use in 50% duty cycle applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration that operates off a high voltage rail up to 600 volts. Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Symbol Parameter VB High Side Floating Supply Voltage VS Min. Max. -0.3 625 VB + 0.3 High Side Floating Supply Offset Voltage VB - 25 VHO High Side Floating Output Voltage VS - 0.3 VB + 0.3 VLO Low Side Output Voltage -0.3 VCC + 0.3 Units V VRT RT Voltage -0.3 VCC + 0.3 VCT CT Voltage -0.3 VCC + 0.3 ICC Supply Current (Note 1) — 25 IRT RT Output Current -5 5 mA dVs/dt Allowable Offset Supply Voltage Transient — 50 V/ns PD Package Power Dissipation @ TA £ +25°C — 1.0 W RthJA Thermal Resistance, Junction to Ambient — 100 °C/W TJ Junction Temperature -55 125 TS Storage Temperature -55 150 TL Lead Temperature (Soldering, 10 seconds) — 300 www.irf.com °C 1 IR2153Z Recommended Operating Conditions The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential. Symbol Definition Min. Max. VB High Side Floating Supply Absolute Voltage VS + 10 VS + 20 VS High Side Floating Supply Offset Voltage — 600 VHO High Side Floating Output Voltage VS VB VLO Low Side Output Voltage 0 VCC ICC Supply Current (Note 1) — 5 Units V mA Dynamic Electrical Characteristics VBIAS (VCC, VBS) = 12V, CL = 1000 pF and TA = 25°C unless otherwise specified. Symbol tr tf tsd DT D Definition Min. Typ. Max. Units Test Conditions Turn-On Rise Time Turn-Off Fall Time Shutdown Propagation Delay Deadtime RT Duty Cycle — — — — — 80 35 660 1.2 50 165 100 — — — ns µs % Typical Connections IR2153Z 600V MAX VCC VB HO RT VS CT Shutdown Note 1: 2 LO COM Because of the IR2153’s application specificity toward off-line supply systems, this IC contains a zener clamp structure between the chip VCC and COM which has a nominal breakdown voltage of 15.6V. Therefore, the IC supply voltage is normally derived by forcing current into the supply lead (typically by means of a high value resistor connected between the chip VCC and the rectified line voltage and a local decoupling capacitor from VCC to COM) and allowing the internal zener clamp circuit to determine the nominal supply voltage. Therefore, this circuit should not be driven by a DC, low impedance power source of greater than V CLAMP. www.irf.com IR2153Z Static Electrical Characteristics VBIAS (VCC, VBS) = 12V, CL = 1000 pF, CT = 1 nF and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to COM. The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO. Symbol fOSC VCLAMP VCT+ VCTVCTSD VRT+ Definition Oscillator Frequency VCC Zener Shunt Clamp Voltage 2/3 VCC Threshold 1/3 VCC Threshold CT shutdown Input Threshold RT High Level Output Voltage, VCC - RT VRT- RT Low Level Output Voltage VOH VOL ILK IQBS High Level Output Voltage, VBIAS - VO Low Level Output Voltage, VO Offset Supply Leakage Current Quiescent VBS Supply Current Micropower VCC Supply Startup Current Quiescent VCC Supply Current CT Input Current VCC Supply Undervoltage Positive Going Threshold VCC Supply Undervoltage Negative Going Threshold VCC Supply Undervoltage Lockout Hysteresis Output High Short Circuit Pulsed Current Output Low Short Circuit Pulsed Current IQCCUV IQCC ICT VCCUV+ VCCUVVCCUVH IO+ IO- www.irf.com Min. Typ. Max. Units Test Conditions — — — — — — — — — — — — — — — — — — 20.0 100 15.6 8.0 4.0 2.2 0 200 20 200 — — — 10 90 400 0.001 9.0 — — — — — — 100 300 50 300 100 100 50 — — — 1.0 — — 8.0 — — — — 1.0 200 400 — — — kHz RT = 35.7 kW RT = 7.04 kW ICC = 5 mA V mV µA IRT = -100 µA IRT = -1 mA IRT = 100 µA IRT = 1 mA IO = 0A IO = 0A VB = VS = 600V VCC < VCCUV VCC > VCCUV V V mA VO = 0V VO = 15V 3 IR2153Z VCCUV+ VCLAMP VCC RT CT HO LO Figure 1. Input/Output Timing Diagram Figure 2. Switching Time Waveform Definitions Figure 3. Deadtime Waveform Definitions 4 www.irf.com IR2153Z Functional Block Diagram RT VB R Q HV LEVEL SHIFT + R + - R Q S Q DEAD TIME PULSE FILTER R PULSE GEN VS VCC R/2 CT 15.6V + R/2 HO S LOGIC DEAD TIME DELAY UV DETECT LO COM Lead Definitions Lead Symbol Description RT CT Oscillator timing resistor input,in phase with HO for normal IC operation Oscillator timing capacitor input, the oscillator frequency according to the following equation: f = VB HO VS VCC LO COM www.irf.com 1 1.4 × (RT + 75Ω) × CT where 75W is the effective impedance of the RT output stage High side floating supply High side gate drive output High side floating supply return Low side and logic fixed supply Low side gate drive output Low side return 5 IR2153Z Case Outline and Dimensions MO-036AA IR2125Z IR2153Z WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 221 8371 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 8/27 6 www.irf.com