ETC IRF7420

PD - 94278
IRF7420
HEXFET® Power MOSFET
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
VDSS
RDS(on) max
ID
-12V
14mΩ@VGS = -4.5V
-11.5A
17.5mΩ@VGS = -2.5V
26mΩ@VGS = -1.8V
-9.8A
-8.1A
Description
These P-Channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications..
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
SO-8
T o p V ie w
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-20
-11.5
-9.2
-46
2.5
1.6
20
±8
-55 to +150
V
A
W
mW/°C
V
°C
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambientƒ
Max.
Units
50
°C/W
1
07/11/01
IRF7420
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-12
–––
–––
–––
–––
-0.4
32
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.007
–––
–––
–––
–––
–––
–––
–––
–––
–––
38
8.1
8.7
8.8
8.8
291
225
3529
1013
656
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, I D = -1mA
14
VGS = -4.5V, ID = -11.5A ‚
17.5 mΩ VGS = -2.5V, ID = -9.8A ‚
26
VGS = -1.8V, ID = -8.1A ‚
-0.9
V
VDS = VGS , ID = -250µA
–––
S
VDS = -10V, ID = -11.5A
-1.0
VDS = -9.6V, VGS = 0V
µA
-25
VDS = -9.6V, VGS = 0V, T J = 70°C
-100
nA VGS = -8V
100
VGS = 8V
–––
ID = -11.5A
–––
nC
VDS = -6V
–––
VGS = -4.5V ‚
13
VDD = -6V, VGS = -4.5V
ns
13
ID = -1.0A
437
RD = 6Ω
338
RG = 6Ω ‚
–––
VGS = 0V
–––
pF
VDS = -10V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
-2.5
–––
–––
-46
–––
–––
–––
–––
62
61
-1.2
93
92
A
V
ns
µC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -2.5A, VGS = 0V
TJ = 25°C, IF = -2.5A
di/dt = -100A/µs ‚
D
S
‚
Notes:
 Repetitive rating; pulse width limited by
ƒ Surface mounted on 1 in square Cu board, t ≤ 10sec.
max. junction temperature.
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF7420
100
100
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
10
1
0.1
-1.0V
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
TOP
10
1
-1.0V
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1
0.1
1
10
100
0.1
-VDS, Drain-to-Source Voltage (V)
-I D , Drain-to-Source Current (A)
TJ = 150 ° C
TJ = 25 ° C
1
V DS = -10V
20µs PULSE WIDTH
1.5
2.0
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
1.0
100
Fig 2. Typical Output Characteristics
100
0.1
0.5
10
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
1
ID = -11.5A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7420
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
5000
C, Capacitance(pF)
4500
4000
Ciss
3500
Coss = Cds + Cgd
3000
2500
2000
Coss
1500
Crss
1000
500
-VGS , Gate-to-Source Voltage (V)
6
5500
ID = -11.5A
4
3
2
1
0
1
10
0
100
10
20
30
40
50
QG , Total Gate Charge (nC)
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
V DS =-9.6V
V DS =-6V
5
0
100
10
TJ = 150 ° C
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.4
0.6
0.8
1.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1.2
100us
1ms
10
10ms
TC = 25 °C
TJ = 150 °C
Single Pulse
1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7420
12
VDS
-ID , Drain Current (A)
VGS
9
RD
D.U.T.
RG
+
VDD
VGS
6
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
3
td(on)
tr
t d(off)
tf
VGS
10%
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
PDM
0.02
1
t1
0.01
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
0.025
RDS ( on ) , Drain-to-Source On ResistanceΩ( )
(
RDS(on), Drain-to -Source On Resistance Ω)
IRF7420
0.020
0.015
ID = -11.5A
0.010
0.005
0.0
2.0
4.0
6.0
8.0
0.08
0.06
VGS = -1.8V
0.04
VGS = -2.5V
0.02
VGS = -4.5V
0
0.0
10.0
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
20.0
30.0
40.0
50.0
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
QGS
.2µF
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 14a. Basic Gate Charge Waveform
6
12V
IG
ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
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1.0
400
0.9
350
0.8
300
0.7
Power (W)
-VGS(th) ( V )
IRF7420
ID = -250µA
0.6
250
200
0.5
150
0.4
100
0.3
50
0
0.2
-75
-50
-25
0
25
50
75
100
TJ , Temperature ( °C )
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
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125
150
0.0001
0.0010
0.0100 0.1000
1.0000 10.0000 100.0000
Time (sec)
Fig 16. Typical Power Vs. Time
7
IRF7420
SO-8 Package Details
D
5
A
8
6
7
6
5
H
0.25 [.010]
1
2
3
A
4
MAX
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BAS IC
1.27 BAS IC
e1
6X
e
e1
C
.025 BAS IC
0.635 BAS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
y
0.10 [.004]
0.25 [.010]
MAX
K x 45°
A
8X b
MILLIMET ERS
MIN
A
E
INCHES
DIM
B
A1
8X L
8X c
7
C A B
F OOTPRINT
NOT ES:
1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENSION: MILLIMET ER
3. DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS .
MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS .
MOLD PROTRUS IONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENSION IS THE LENGTH OF LEAD F OR S OLDERING T O
A S UBST RATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOS FET )
INTERNAT IONAL
RECTIFIER
LOGO
8
YWW
XXXX
F7101
DATE CODE (YWW)
Y = LAS T DIGIT OF THE YEAR
WW = WEEK
LOT CODE
PART NUMBER
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IRF7420
Tape and Reel
T E R M IN A L N U M B E R 1
1 2 .3 ( .48 4 )
1 1 .7 ( .46 1 )
8 .1 ( .31 8 )
7 .9 ( .31 2 )
F E E D D IR E C T IO N
N O TES:
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ).
3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1.
33 0.0 0
(1 2 .9 9 2 )
M AX .
1 4 .4 0 ( .5 66 )
1 2 .4 0 ( .4 88 )
N O TE S :
1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/01
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9