ISP321-1X, ISP321-2X, ISP321-4X ISP321-1, ISP321-2, ISP321-4 HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS l UL recognised, File No. E91231 ISP321-1X ISP321-1 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead form : -STD - G form - SMD approved to CECC 00802 l Certified to EN60950 by the following Test Bodies :Nemko - Certificate No. P96102022 Fimko - Registration No. 192313-01..25 Semko - Reference No. 9639052 01 Demko - Reference No. 305969 DESCRIPTION The ISP321-1 , ISP321-2 , ISP321-4 series of optically coupled isolators consist of infrared light emitting diodes and NPN silicon photo transistors in space efficient dual in line plastic packages. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Current Transfer Ratio ( 50% min) l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l High BVCEO ( 80Vmin ) l All electrical parameters 100% tested l Custom electrical selections available APPLICATIONS l Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances OPTION SM Dimensions in mm 2.54 1 2 7.0 6.0 1.2 5.08 4.08 7.62 4.0 3.0 13° Max 0.5 3.0 ISP321-2X ISP321-2 0.5 0.26 3.35 2.54 7.0 6.0 2 3 7 1.25 0.75 10.16 9.16 7.62 4.0 3.0 13° Max 0.5 3.0 0.26 3.35 0.5 1 ISP321-4X ISP321-4 16 15 14 2 3 4 2.54 7.0 6.0 1.2 13 5 12 6 11 7 8 10 9 7.62 4.0 3.0 13° Max 0.5 0.26 10.16 6 5 1.2 7.62 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1YD England Tel: (01429)863609 Fax : (01429) 863581 e-mail [email protected] http://www.isocom.com 3/11/99 8 4 20.32 19.32 10.46 9.86 1 OPTION G SURFACE MOUNT 0.6 0.1 4 3 3.0 0.5 3.35 0.26 ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail [email protected] http://www.isocom.com DB91075M-AAS/A1 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 125°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 50mA 6V 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation 80V 6V 150mW POWER DISSIPATION Total Power Dissipation 200mW (derate linearly 2.67mW/°C above 25°C) ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted ) Input Output Coupled PARAMETER MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) 1.0 5 Collector-emitter Breakdown (BVCEO) 80 ( Note 2 ) Emitter-collector Breakdown (BVECO) 6 Collector-emitter Dark Current (ICEO) Current Transfer Ratio (CTR) (Note 2) ISP321-1, ISP321-2, ISP321-4 CTR selection available GB BL GB Collector-emitter Saturation VoltageVCE (SAT) GB Input to Output Isolation Voltage VISO 3/11/99 1.3 10 100 50 100 200 30 600 600 600 0.4 0.4 5300 7500 Input-output Isolation Resistance RISO 5x1010 Rise Time tr Fall Time tf Turn-on Time ton Turn-off Time toff Note 1 Note 2 1.15 2 3 3 3 TEST CONDITION V V µA IF = 10mA IR = 10µA VR = 5V V IC = 0.5mA V nA IE = 100µA VCE = 48V % % % % V V VRMS VPK 5mA IF , 5V VCE Ω µs µs µs µs VIO = 500V (note 1) VCC = 10V , IC = 2mA, RL = 100Ω 1mA IF , 0.4V VCE 8mA IF , 2.4mA IC 1mA IF , 0.2mA IC See note 1 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. DB91075M-AAS/A1 Collector Power Dissipation vs. Ambient Temperature Collector Current vs. Low Collector-emitter Voltage TA = 25°C 25 Collector current I C (mA) Collector power dissipation P C (mW) 200 150 100 50 0 15 50 40 30 20 10 10 5 20 5 IF = 2mA 0 -30 0 25 50 75 100 0 125 Ambient temperature TA ( °C ) 0.2 50 50 Collector current I C (mA) Forward current I F (mA) 1.0 TA = 25°C 30 50 40 30 20 10 0 20 40 15 30 10 20 10 IF = 5mA 0 -30 0 25 50 75 100 125 0 Ambient temperature TA ( °C ) 2 4 6 8 10 Collector-emitter voltage VCE ( V ) Collector-emitter Saturation Voltage vs. Ambient Temperature (V) Current Transfer Ratio vs. Forward Current 320 0.28 280 0.24 Current transfer ratio CTR (%) CE(SAT) 0.8 Collector Current vs. Collector-emitter Voltage 60 Collector-emitter saturation voltage V 0.6 Collector-emitter voltage VCE ( V ) Forward Current vs. Ambient Temperature IF = 5mA IC = 1mA 0.20 0.16 0.12 0.08 0.04 240 200 160 120 80 VCE = 5V TA = 25°C 40 0 0 -30 0 25 50 75 Ambient temperature TA ( °C ) 3/11/99 0.4 100 1 2 5 10 20 50 Forward current IF (mA) DB91075M-AAS/A1