ETC JANS2N3700UB

The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 15 October 2002.
INCH-POUND
MIL-PRF-19500/391G
15 July 2002
SUPERSEDING
MIL-PRF-19500/391F
26 March 2001
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER
TYPES 2N3019, 2N3019S, 2N3057A, 2N3700, AND 2N3700UB
JAN, JANTX, JANTXV, JANS, JANHC2N3700 AND JANKC2N3700
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors. Four
levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product
assurance are provided for the unencapsulated device type 2N3700.
1.2 Physical dimensions. See figure 1, 2N3019 (TO-5), 2N3019S (similar to TO-39), figure 2, 2N3057A (TO-46),
figure 3, 2N3700 (TO-18), figure 4, 2N3700UB, and figure 5, JANHCA2N3700,.and JANKCA2N3700.
1.3 Maximum ratings.
Type
PT
TA = +25°C
W
2N3019
2N3019S
2N3057A
2N3700
2N3700UB
0.8
0.8
0.5
0.5
0.5
(2)
(2)
(3)
(3)
(3)
VCBO
VEBO
VCEO
IC
TJ and TSTG
RθJA
W
V dc
V dc
V dc
A dc
°C
°C/W
5
5
1.8
1.8
1.16
140
140
140
140
140
7
7
7
7
7
80
80
80
80
80
1
1
1
1
1
-65 to +200
-65 to +200
-65 to +200
-65 to +200
-65 to +200
175
175
325
325
325
TC = +25°C
(1)
(1) Derate linearly at 28.6 mW/°C for types 2N3019 and 2N3019S; 10.3 mW/°C for types 2N3057A and 2N3700;
6.63 mW/°C for 2N3700UB, for TC ≥ +25°C.
(2) Derate linearly at 5.7 mW/°C above TA = +60°C.
(3) Derate linearly at 3.08 mW/°C above TA = +37.5°C.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC, P.O.
Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form
1426) appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/391G
1.4 Primary electrical characteristics.
Limits
hFE1
hFE2
VCE = 10 V dc
IC = 150 mA dc
VCE = 10 V dc
IC = 0.1 mA dc
100
300
50
200
hFE3 (1)
VCE = 10 V dc
IC = 10 mA dc
|hfe|
VCE(sat)1 (1)
VCE = 10 V dc
IC = 50 mA dc
f = 20 MHz
IC = 150 mA dc
IB = 15 mA dc
V dc
Min
Max
90
5
20
0.20
(1) Pulsed (see 4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/391G
Dimensions
Symbol
Inches
Millimeters
CD
.305
.335
7.75
8.51
CH
.240
.260
6.10
6.60
HD
.335
.370
8.51
9.40
LC
LD
.200 TP
.016
.021
LL
LU
5.08 TP
0.41
0.53
See notes
.016
L1
.019
Notes
6
7, 8
7, 8,
11, 12
0.41
.050
0.48
7, 8
1.27
7, 8
L2
.250
6.35
7, 8
P
.100
2.54
5
Q
.050
1.27
r
.010
0.25
10
TL
.029
.045
0.74
1.14
4
TW
.028
.034
0.71
0.86
3
α
45° TP
45° TP
6
FIGURE 1. Physical dimensions for device types 2N3019 (TO-5) and 2N3019S (TO-39).
3
MIL-PRF-19500/391G
NOTES:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
Dimension are in inches.
Metric equivalents are given for general information only.
Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
Dimension TL measured from maximum HD.
Body contour optional within zone defined by HD, CD, and Q.
Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within
.007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at
MMC. The device may be measured by direct methods.
Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum.
Diameter is uncontrolled in L1 and beyond LL minimum.
All three leads.
The collector shall be internally connected to the case.
Dimension r (radius) applies to both inside corners of tab.
For transistor type 2N3019, dimension LL shall be 1.5 inches (38.1 mm) minimum and 1.75 inches
(44.4 mm) maximum.
For transistor type 2N3019S, dimension LL shall be .5 inch (12.7 mm) minimum and .75 inch (19.0 mm)
maximum.
In accordance with ANSI Y14.5M, diameters are equivalent to φx symbology.
Lead 1 = emitter, lead 2 = base, lead 3 = collector.
FIGURE 1. Physical dimensions for device types 2N3019 (TO-5) and 2N3019S (TO-39) - Continued.
4
MIL-PRF-19500/391G
Symbol
CD
CH
HD
LC
LD
LL
LU
L1
L2
TL
TW
r
α
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.178
.195
4.52
4.95
.065
.085
1.65
2.16
.209
.230
5.31
5.84
.100 TP
2.54 TP
.016
.021
0.41
0.53
.500
1.750
12.70
44.45
.016
.019
0.41
0.48
.050
1.27
.250
6.35
.028
.048
0.71
1.22
.036
.046
0.91
1.17
.007
0.18
45° TP
45° TP
Note
6
7
7
7
7
7
3
2
10, 11
6
NOTES:
1. Dimensions are in inches. Metric equivalents are given for general information only.
2. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
3. Dimension TL measured from maximum HD.
4. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within
.007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at
MMC. The device may be measured by direct methods.
5. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum.
Diameter is uncontrolled in L1 and beyond LL minimum.
6. All three leads.
7. The collector shall be internally connected to the case.
8. Dimension r (radius) applies to both inside corners of tab.
9. In accordance with ANSI Y14.5M, diameters are equivalent to φx symbology.
10. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
FIGURE 2. Physical dimensions for 2N3057A (TO-46).
5
MIL-PRF-19500/391G
Dimensions
Symbol
Inches
Millimeters
CD
.178
.195
4.52
4.95
CH
.170
.210
4.32
5.33
HD
.209
.230
5.31
5.84
LC
.100 TP
2.54 TP
Notes
5
LD
.016
.021
0.41
0.53
LL
.500
.750
12.70
19.05
6, 7
LU
.016
.019
0.41
0.48
6, 7
1.27
6, 7
L1
L2
.050
.250
Q
6.35
.040
r
6, 7
1.02
4
0.25
9
TL
.028
.048
0.71
1.22
3
TW
.036
.046
0.91
1.17
2
α
.010
6, 7
45° TP
45° TP
5
FIGURE 3. Physical dimensions for type 2N3700 (TO-18).
6
MIL-PRF-19500/391G
NOTES:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
Dimensions are in inches. Metric equivalents are given for general information only.
Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
Dimension TL measured from maximum HD.
Body contour optional within zone defined by HD, CD, and Q.
Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within
.007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at
MMC. The device may be measured by direct methods.
Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum.
Diameter is uncontrolled in L1 and beyond LL minimum.
All three leads.
The collector shall be internally connected to the case.
Dimension r (radius) applies to both inside corners of tab.
In accordance with ANSI Y14.5M, diameters are equivalent to φx symbology.
Lead 1 = emitter, lead 2 = base, lead 3 = collector.
FIGURE 3. Physical dimensions for type 2N3700 (TO-18) - Continued.
7
MIL-PRF-19500/391G
Symbol
A
A1
B1
B2
B3
D
D1
D2
D3
E
E3
L1
L2
Inches
Min
.046
.017
.016
.016
.016
.085
.071
.035
.085
.115
.022
.022
Dimensions
Millimeters
Max
Min
Max
.056
0.97
1.42
.035
0.43
0.89
.024
0.41
0.61
.024
0.41
0.61
.024
0.41
0.61
.108
2.41
2.74
.079
1.81
2.01
.039
0.89
0.99
.108
2.41
2.74
.128
2.82
3.25
.128
3.25
.038
0.56
0.96
.038
0.56
0.96
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
FIGURE 4. Physical dimensions, surface mount (2N3700UB).
8
MIL-PRF-19500/391G
Die size:
Die thickness:
Base pad:
Emitter pad:
Back metal:
Top metal:
Back side:
Glassivation:
.030 x .030 inch (0.762 x 0.762 mm).
.008 ±.0016 inch (0.2032 mm ±0.04064 mm).
.004 x .010 inch (0.1016 mm x 0.254 mm).
.0023 x .007 inch (0.05842 mm x 0.1778 mm).
Gold, 6500 ± 1950 Ang.
Aluminum, 12,000 Ang. minimum; 14,500 Ang. nominal.
Collector.
SiO2, 7500 ±1500 Ang.
FIGURE 5. JANHCA2N3700 and JANKCA2N3700 die dimensions.
9
MIL-PRF-19500/391G
3. REQUIREMENTS
3.1 General. The requirements for acquiring the product described herein shall consist of this document and
MIL-PRF-19500.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.4).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in
MIL-PRF-19500, and on figure 1 (2N3019, TO-5, 2N3019S, TO-39), figure 2 (2N3057A, TO-46), figure 3 (2N3700,
TO-18), figure 4 (2N3700UB, surface mount) and figure 5 (JANHCA2N3700, JANKCA2N3700) herein.
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I.
3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and
4.4.3.
3.7 Marking. Marking shall be in accordance with MIL-PRF-19500, except for the UB suffix package. Marking on
the UB package shall consist of an abbreviated part number, the date code, and the manufacturers symbol or logo.
The prefixes JAN, JANTX, JANTXV, and JANS can be abbreviated as J, JX, JV, and JS respectively. The "2N" prefix
can also be omitted.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
* 4.2.1 Group E qualification. Group E qualification shall be performed herein for qualification or requalification
only. In case qualification was awarded to a prior revision of the associated specification that did not request the
performance of table II tests, the tests specified in table II herein shall be performed by the first inspection lot to this
revision to maintain qualification.
* 4.2.2 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with
MIL-PRF-19500.
10
MIL-PRF-19500/391G
* 4.3 Screening (JANTX, JANTXV, and JANS only). Screening shall be in accordance with table IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see table
IV of
MIL-PRF-19500)
Measurement
JANS
JANTX and JANTXV levels
3c
Thermal impedance (see 4.3.1).
Thermal impedance (see 4.3.1).
9
ICES1 and hFE1
Not applicable
10
48 hours minimum
48 hours minimum
11
ICES1; hFE1; ∆ICES1 = 100 percent of
initial value or 5 nA dc, whichever is
greater; ∆hFE1 = ±15 percent.
ICES1 and hFE1
12
See 4.3.2
See 4.3.2
13
Subgroups 2 & 3 of table I herein;
∆ICES1 = 100 percent of initial value or
5 nA dc, whichever is greater; ∆hFE1 =
±15 percent.
Subgroup 2 of table I herein; ∆ICES1 =
100 percent of initial value or 5 nA dc,
whichever is greater; ∆hFE1 = ±15
percent.
4.3.1 Thermal impedance (ZθJX measurements). The ZθJX measurements shall be performed in accordance
with method 3131 of MIL-STD-750.
a. IM measurement current .................. 5 mA.
b. IH forward heating current................ 200 mA (min).
c. tH heating time ................................. 25 - 30 ms.
d. tmd measurement delay time .......... 60 µs max.
e. VCE collector-emitter voltage .......... 10 V dc minimum.
The maximum limit for ZθJX under these test conditions are ZθJX (max) = 35°C/W.
4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: TA = room ambient as defined in the
general requirements of 4.5 of MIL-STD-750. VCB = 10 - 30 V dc, power shall be applied to achieve TJ = +135°C
minimum and minimum power dissipation of PD = 75 percent of maximum rated PT as defined in 1.3.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as
specified herein. If alternate screening is being performed in accordance with E.5.3.1d of MIL-PRF-19500, a
sample of screened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only
(table VIb, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in
accordance with 4.4.2).
11
MIL-PRF-19500/391G
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I
herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements
(end-points) shall be in accordance with group A, subgroup 2. Delta requirements shall be in accordance with the
steps of table III herein as specified in the notes for table III. See 4.4.2.2 herein for JAN, JANTX, and JANTXV group
B testing. Electrical measurements (end-points) for JAN, JANTX, and JANTXV shall be after each step in 4.4.2.2
and shall be in accordance with table I, group A, subgroup 2. Delta requirements shall be in accordance with the
steps of table III herein as specified in the notes for table III.
* 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Method
Condition
B4
1037
VCB = 10 V dc, 2,000 cycles.
B5
1027
NOTE: If a failure occurs, resubmission shall be at the test conditions of the
original sample. VCB = 10 V dc, PD ≥ 100 percent of maximum rated PT (see
1.3).
Subgroup
Option 1: 96 hours minimum, sample size in accordance with MIL-PRF-19500,
table Via, adjust TA or PD to achieve TJ = +275°C minimum.
Option 2: 216 hours minimum, sample size = 45, c = 0; adjust TA or PD to
achieve TJ = +225°C minimum.
B5
2037
B6
Test condition A.
Not applicable.
4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. For
rules on resubmission for failed steps, see MIL-PRF-19500 rules on resubmission of failed subgroups.
Step
Method Condition
1.
1039
Steady-state life: Test condition B, 340 hours, VCB = 10 - 30 V dc. n = 45 devices, c = 0.
Power shall be applied to the device to achieve a TJ = +150°C minimum and a minimum
power dissipation PD = 75 percent of max rated PT as defined in 1.3 herein.
2.
1039
Steady-state life test of step 1 shall be extended to 1,000 hours for each die design.
Samples shall be selected from a wafer lot every twelve months of wafer production. Group
B, step 2 shall not be required more than once for any single wafer lot. n = 45 devices, c =
0.
3.
1032
High-temperature life (non-operating), TA = +200°C n = 22, c = 0.
12
MIL-PRF-19500/391G
4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following
requirements:
a.
For JAN, JANTX and JANTXV samples shall be selected randomly from a minimum of three wafers (or
from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection
lot. See MIL-PRF-19500.
b.
Must be chosen from an inspection lot that has been submitted to and passed table I, group A, subgroup 2
conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high
temperature, the samples for life test (table VIa, subgroups B4 and B5 for JANS, and table VIb, group B for
JAN, JANTX and JANTXV) may be pulled prior to the application of final lead finish.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 herein (JANS). See 4.4.3.2 herein for
JAN, JANTX, and JANTXV group C testing. Electrical measurements (end-points) shall be in accordance with table
I, group A, subgroup 2. Delta requirements shall be in accordance with the steps of table III herein as specified in
the notes for table III.
4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500.
Subgroup
Method
Condition
C2
2036
Test condition E; not applicable for UB devices.
C6
1026
Steady-state life: Test condition B, 1,000 hours, VCB = 10 - 30 V dc. n = 45 devices, c =
0. Power shall be applied to the device to achieve a TJ = +150°C minimum and a
minimum power dissipation PD = 75 percent of max rated PT as defined in 1.3 herein.
* 4.4.3.2 Group C inspection, (JAN, JANTX, and JANTXV), table VII of MIL-PRF-19500.
Subgroup
Method
Condition
C2
2036
Test condition E; not applicable for UB devices.
C5
3131
See 4.5.3, RθJC.
C6
Not applicable.
4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any
inspection lot containing the intended package type and lead finish procured to the same specification which is
submitted to and passes table I, group A tests for conformance inspection. When the final lead finish is solder or
any plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application
of final lead finish. Testing of a subgroup using a single device type enclosed in the intended package type shall be
considered as complying with the requirements for that subgroup. Delta requirements shall be in accordance with
the steps of table III herein as specified in the notes for table III.
* 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table IX of MIL-PRF-19500 and as specified herein. Electrical measurements (endpoints) shall be in accordance with table I, subgroup 2 herein. Delta requirements shall be in accordance with the
steps of table III herein as specified in the notes for table III.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows:
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of
MIL-STD-750.
13
MIL-PRF-19500/391G
4.5.2 Collector-base time constant. This parameter may be determined by applying an rf signal voltage of 1.0 volt
(rms) across the collector-base terminals, and measuring the ac voltage drop (Veb ) with a high- impedance rf
voltmeter across the emitter-base terminals. With f = 79.8 MHz used for the 1.0 volt signal, the following
computation applies:
r'b , Cc(ps) = 2 X Veb (millivolts)
* 4.5.3 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with test method
3131 of MIL-STD-750. The following details shall apply:
a. Collector current magnitude during power application shall be 0.15 A dc.
b. Collector to emitter voltage magnitude shall be 20 V dc.
c. Reference temperature measuring point shall be the case.
d. Reference point temperature shall be +25°C ≤ TR ≤ +35°C. The chosen reference temperature shall be
recorded before the test is started.
e. Mounting arrangements shall be with heat sink to case.
f. Maximum RθJC limit shall be 35°C/W.
14
MIL-PRF-19500/391G
TABLE I. Group A inspection.
MIL-STD-750
Inspection 1/
Method
Symbol
Conditions
Limit
Min
Unit
Max
Subgroup 1 2/
Visual and mechanical 3/
examination
2071
n = 45 devices, c = 0
Solderability 3/ 4/
2026
n = 15 leads, c = 0
Resistance to solvents
3/ 4/ 5/
1022
n = 15 devices, c = 0
Temp cycling 3/ 4/
1051
Test condition C, 25 cycles.
n = 22 devices, c = 0
Hermetic seal 4/
1071
n = 22 devices, c = 0
Fine leak
Gross leak
Group A, subgroup 2
Electrical measurements
4/
Bond strength 3/ 4/
2037
Precondition
TA = +250°C at t = 24 hrs or
TA = +300°C at t = 2 hrs
n = 11 wires, c = 0
Collector to base cutoff
current
3036
Bias condition D; VCB = 140 V dc
ICBO1
10
µA dc
Emitter to base cutoff
current
3061
Bias condition D; VEB = 7 V dc
IEBO1
10
µA dc
Collector to emitter
breakdown voltage
3011
Bias condition D; IC = 30 mA dc
pulsed (see 4.5.1)
V(BR)CEO
Collector to emitter cutoff
current
3041
Bias condition C; VCE = 90 V dc
ICES1
10
nA dc
Emitter to base cutoff
current
3061
Bias condition D; VEB = 5 V dc
IEBO2
10
nA dc
Forward current transfer
ratio
3076
VCE = 10 V dc; IC = 150 mA dc;
pulsed (see 4.5.1)
hFE1
100
300
Forward current transfer
ratio
3076
VCE = 10 V dc; IC = 0.1 mA dc;
pulsed (see 4.5.1)
hFE2
50
200
Subgroup 2
See footnotes at end of table.
15
80
V dc
MIL-PRF-19500/391G
TABLE I. Group A inspection - Continued.
MIL-STD-750
Inspection 1/
Method
Symbol
Conditions
Limit
Min
Unit
Max
Subgroup 2 – Continued
Forward current transfer
ratio
3076
VCE = 10 V dc; IC = 10 mA dc;
pulsed (see 4.5.1)
hFE3
90
Forward current transfer
ratio
3076
VCE = 10 V dc; IC = 500 mA dc;
pulsed (see 4.5.1)
hFE4
50
Forward current transfer
ratio
3076
VCE = 10 V dc; IC = 1 A dc; pulsed
(see 4.5.1)
hFE5
15
Collector to emitter
voltage (saturated)
3071
IC = 150 mA dc; IB = 15 mA dc;
pulsed (see 4.5.1)
VCE(sat)1
0.2
V dc
Collector to emitter
voltage (saturated)
3071
IC = 500 mA dc; IB = 50 mA dc;
pulsed (see 4.5.1)
VCE(sat)2
0.5
V dc
Base to emitter voltage
(saturated)
Subgroup 3
3066
Test condition A; IC = 150 mA dc; IB
= 15 mA dc; pulsed (see 4.5.1)
VBE(sat)
1.1
V dc
ICES2
10
µA dc
High-temperature
operation
Collector to emitter cutoff
current
TA = +150°C
3041
Low-temperature
operation
Forward current transfer
ratio
200
Bias condition C; VCE = 90 V dc
TA = -55°C
3076
VCE = 10 V dc; IC = 150 mA dc;
pulsed (see 4.5.1)
hFE6
40
Small-signal short- circuit
forward-current transfer
ratio
3206
VCE = 5 V dc; IC = 1 mA dc,
f = 1 kHz
hfe
80
400
Magnitude of smallsignal short-circuit
forward-current transfer
ratio
3306
VCE = 10 V dc; IC = 50 mA dc; f =
20 MHz
|hfe |
5
20
Subgroup 4
See footnotes at end of table.
16
MIL-PRF-19500/391G
TABLE I. Group A inspection - Continued.
MIL-STD-750
Inspection 1/
Method
Symbol
Conditions
Limit
Min
Unit
Max
Subgroup 4 – continued
Input capacitance
(output open circuited)
3240
VEB = 0.5 V dc; IC = 0;
100 kHz ≤ f ≤ 1 MHz
Cibo
60
pF
Open circuit output
capacitance
3236
VCB = 10 V dc; IE = 0;
100 kHz ≤ f ≤ 1 MHz
Cobo
12
pF
Noise figure
3246
VCE = 10 V dc; IC = 100 µA dc; Rg =
1 kΩ; power bandwidth = 200 Hz
NF
4
dB
Collector to base time
constant
VCB = 10 V dc; IC = 10 mA dc; f =
79.8 MHz (see 4.5.2)
r'b,Cc
400
ps
Pulse response
See figure 6
ton + toff
30
ns
Subgroup 5
Safe operating area
(continuous dc)
3051
TC = 25°C; t = 10 ms, 1 cycle (see
figure 7)
Test 1
VCE = 10 V dc;
2N3019, 2N3019S
IC = 500 mA dc
2N3057A, 2N3700,
2N3700UB
IC = 180 mA dc
Test 2
VCE = 40 V dc;
2N3019, 2N3019S
IC = 125 mA dc
2N3057A, 2N3700,
2N3700UB
IC = 45 mA dc
Test 3
VCE = 80 V dc;
2N3019, 2N3019S
IC = 60 mA dc
2N3057A, 2N3700,
2N3700UB
IC = 22.5 mA dc
Electrical measurements
See group A, subgroup 2 herein
See footnotes at end of table.
17
MIL-PRF-19500/391G
TABLE I. Group A inspection - Continued.
MIL-STD-750
Inspection 1/
Method
Conditions
Symbol
Limit
Min
Unit
Max
Subgroups 6 and 7
Not applicable
1/
2/
3/
4/
5/
For sampling plan see MIL-PRF-19500.
For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure in
table I, group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon
submission.
Separate samples may be used.
Not required for JANS devices.
Not required for laser marked devices.
18
MIL-PRF-19500/391G
* TABLE II. Group E inspection (all quality levels) – for qualification only.
Inspection
MIL-STD-750
Method
Conditions
Subgroup 1
Temperature cycling
(air to air)
Qualification
45 devices
c=0
1051
Test condition C, 500 cycles
Hermetic seal
Fine leak
Gross leak
1071
Electrical measurements
See table I, group A, subgroup 2 and table III
herein.
45 devices
c=0
Subgroup 2
Intermittent life
1037
Electrical measurements
VCB = 10 V dc, 6,000 cycles.
See table I, group A, subgroup 2 and table III
herein.
Subgroups 3, 4, 5, 6
and 7
Not applicable
Subgroup 8
Reverse stability
1033
Condition A for devices ≥ 400 V
Condition B for devices < 400 V
19
45 devices
c=0
MIL-PRF-19500/391G
TABLE III. Groups B and C delta measurements. 1/ 2/ 3/
Step
1/
2/
3/
4/
Inspection
MIL-STD-750
Method
Conditions
Symbol
Limits
Min
Unit
Max
1.
Collector-emitter
cutoff current
3041
Bias condition C; VCE = 90 V
dc; pulsed (see 4.5.1)
∆ICES1
±100 percent of initial
value or 8 nA dc,
whichever is greater.
2.
Forward-current
transfer ratio
3076
VCE = 10 V dc; IC = 0.1 mA
dc; pulsed (see 4.5.1)
∆hFE2
±25 percent change
from initial reading.
3.
Forward-current
transfer ratio
3076
VCE = 10 V dc; IC = 150 mA
dc; pulsed (see 4.5.1)
∆hFE1
±25 percent change
from initial reading.
4.
Collector-emitter
voltage (saturated)
3071
IC = 150 mA dc; IB = 15 mA
dc; pulsed (see 4.5.1)
∆VCE(sat)1
4/
±50 mV dc change
from previous
measured value.
The delta measurements for table VIa (JANS) of MIL-PRF-19500 are as follows:
a. Subgroup 4, see table III herein, step 4.
b. Subgroup 5, see table III herein, steps 1 and 3.
The delta measurements for group B, (JAN, JANTX, and JANTXV), see 4.4.2.2 herein, are as follows: Steps 1
and 2 of 4.4.2.2 herein, see table III herein, steps 1, 3 and 4.
The delta measurements for table VII (for JANS only) of MIL-PRF-19500 are as follows: Subgroup 6, see table
III herein, steps 1 and 3.
Measured within .125 inch (3.175 mm) from the body of the device.
20
MIL-PRF-19500/391G
NOTES:
1. The rise time (tr) of the applied pulse shall be ≤ 2.0 ns, duty cycle ≤ 2 percent and the
generator source impedance shall be 50 ohms.
2. Sampling oscilloscope: ZIN ≥ 100 kΩ, CIN ≤ 12 pF, rise time ≤ 2.0 ns.
FIGURE 6. Nonsaturated switching-time test circuit.
21
MIL-PRF-19500/391G
*
*
FIGURE 7. Maximum safe operating graph (dc).
22
MIL-PRF-19500/391G
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or
order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to
contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements
are maintained by the Inventory Control Point's packaging activity within the Military Department or Defense Agency,
or within the Military Department's System Command. Packaging data retrieval is available from the managing
Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the
responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. The acquisition requirements are as specified in MIL-PRF-19500.
6.3. Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter
version (example JANHCA2N3700) will be identified on the QML.
Die ordering information
PIN
Manufacturer
34156
JANHCA2N3700
JANKCA2N3700
2N3700
6.4 Qualification. With respect to products requiring qualification, awards will be made only for products which
are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not
such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from
Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000.
6.5 Changes from previous issue. The margins of this revision are marked with an asterisk to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes
no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
Custodians:
Army - CR
Navy - EC
Air Force - 11
NASA - NA
DLA - CC
Preparing activity:
DLA - CC
(Project 5961-2504)
Review activities:
Army - AR, MI, SM
Navy - AS, MC
Air Force – 19
23
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on
current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the
referenced document(s) or to amend contractual requirements.
I RECOMMEND A CHANGE:
1. DOCUMENT NUMBER
MIL-PRF-19500/391G
2. DOCUMENT DATE
15 July 2002
3. DOCUMENT TITLE
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N3019, 2N3019S, 2N3057A, 2N3700,
AND 2N3700UB JAN, JANTX, JANTXV, JANS, JANHCA2N3700 AND JANHCA2N3700.
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as
needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
c. ADDRESS (Include Zip Code)
b. ORGANIZATION
d. TELEPHONE (Include Area Code)
COMMERCIAL
DSN
FAX
EMAIL
7. DATE SUBMITTED
8. PREPARING ACTIVITY
a. Point of Contact
Alan Barone
c. ADDRESS
Defense Supply Center Columbus,
ATTN: DSCC-VAC, P.O. Box 3990,
Columbus, OH 43216-5000
DD Form 1426, Feb 1999 (EG)
b. TELEPHONE
Commercial
DSN
FAX
EMAIL
614-692-0510
850-0510
614-692-6939
[email protected]
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221
Telephone (703) 767-6888 DSN 427-6888
Previous editions are obsolete
WHS/DIOR, Feb 99