INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 27 May 2002. MIL-PRF-19500/313F 27 February 2002 SUPERSEDING MIL-PRF-19500/313E 18 August 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW POWER TYPES 2N2432, 2N2432A, 2N2432UB, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for low power, high speed chopper, NPN silicon transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. * 1.2 Physical dimensions. See figure 1 (T0-18), figures 2 and 3 (JANHC/JANKC die), and figure 4 (UB package). * 1.3 Maximum ratings. Type 2N2432 2N2432A 2N2432UB PT TA = +25°C VCBO VCEO VECO IC TSTG TJ RθJA mW V dc V dc V dc mA dc °C °C °C/mW 360 (1) 360 (1) 360 (1) 30 45 30 30 45 30 15 18 15 100 100 100 -65 to +200 -65 to +200 -65 to +200 -65 to +175 -65 to +175 -65 to +175 325 325 325 (1) Derate linearly 2.06 mW/°C for TA > +25.5°C. * 1.4 Primary electrical characteristics at TA = +25°C. hFE1 hFE2 VCE = 5 V dc IC = 10 µA dc VCE = 5 V dc IC = 1 mA dc Limits Min Max 30 80 400 hFE(inv)1 VCE = 10 mA dc IE = 200 µA dc 2N2432 2N2432A 2 3 VCE(sat) IC = 10 mA dc IB = 500 µA dc rec(on) Ie = 100 µA ac (rms) IB = 1 mA dc, IE = 0, f = 1 kHz RθJC 2N2432 2N2432UB 2N2432A V dc Ohms Ohms °C/mW .15 20 15 .25 Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/313F 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD DEPARTMENT OF DEFENSE MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The requirements for acquiring the product described herein shall consist of this document and MIL-PRF-19500. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.4). 2 MIL-PRF-19500/313F Symbol CD CH HD LC LD LL LU L1 L2 P Q TL TW r α Dimensions Inches Millimeters Min Max Min Max .178 .195 4.52 4.95 .170 .210 4.32 5.33 .209 .230 5.31 5.84 .100 TP 2.54 TP .016 .021 0.41 0.53 .500 .750 12.70 19.05 .016 .019 0.41 0.48 .050 1.27 .250 6.35 .100 2.54 .030 0.76 .028 .048 0.71 1.22 .036 .046 0.91 1.17 .010 0.25 45° TP 45° TP Note 6 7,8 7,8 7,8 7,8 7,8 5 3,4 3 10 6 NOTES: 1. Dimension are in inches. 2. Metric equivalents are given for general information only. 3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. In accordance with ANSI Y14.5M, diameters are equivalent to φx symbology. 12. Lead 1 = emitter, lead 2 = base, lead 3 = collector. FIGURE 1. Physical dimensions (similar to TO-18). 3 MIL-PRF-19500/313F Ltr A B φC φD Dimensions Inches Millimeters Min Max Min Max .013 .017 0.330 0.430 .017 .021 0.430 0.533 .0048 0.122 .0034 0.086 NOTES: 1. Chip thickness: 2. Top metal: 3. Back metal: 4. Backside: .005 to .007 inch (0.127 to 0.178 millimeter). Aluminum 10,000 Å min, 12,000 Å nominal. Gold 2,000 Å min, 4,000 Å nominal. Collector. FIGURE 2. JANHC (A-version) die dimensions. 4 MIL-PRF-19500/313F NOTES: 1. Chip size 2. Chip thickness 3. Top metal 4. Back metal 5. 6. Backside Bonding pad 7. Passivation .015 x .019 inch ±.001 inch, (0.381 x 0.483 ±0.025 millimeter). .010 ±.0015 inch, (0.254 ±0.0038 millimeter). Aluminum 15,000Å minimum, 18,000Å nominal. A. Gold 2,500Å minimum, 3,000Å nominal. B. Eutectic Mount - No Gold. Collector B = .003 inch (0.076 millimeter). E = .004 inch diameter (0.076 millimeter). Si3N4 (Silicon Nitride) 2 kÅ min, 2.2 kÅ nom. FIGURE 3. Physical dimensions, JANHCA and JANKCA (B - version) die. 5 MIL-PRF-19500/313F Symbol A A1 B1 B2 B3 D D1 D2 D3 E E3 L1 L2 Inches Min .046 .017 .016 .016 .016 .085 .071 .035 .085 .115 .022 .022 Dimensions Millimeters Max Min Max .056 0.97 1.42 .035 0.43 0.89 .024 0.41 0.61 .024 0.41 0.61 .024 0.41 0.61 .108 2.41 2.74 .079 1.81 2.01 .039 0.89 0.99 .108 2.41 2.74 .128 2.82 3.25 .128 3.25 .038 0.56 0.96 .038 0.56 0.96 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. * FIGURE 4. Physical dimensions, surface mount (UB version). 6 MIL-PRF-19500/313F 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. V(BR)ECO - - - Breakdown voltage, emitter to collector, with base open circuited. hFE(inv) - - - Forward current transfer ratio except that the collector and emitter shall be interchanged. - - - - - Emitter current (rms). Ie rec(on) VBC - - - Small signal emitter to collector on state resistance. - - - - Base to collector voltage. VEC(ofs) - - - Emitter to collector offset voltage, i.e., open circuit voltage between emitter and collector when the base to collector junction is forward biased. Vec - - - - Emitter to collector voltage (rms). * 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figures 1, 2, 3, and 4. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking may be omitted from the body, but shall be retained on the initial container. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in paragraph 1.3. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table 1. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4, and tables I, II, and III). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 JANHC and JANKC devices. JANHC and JANKC devices shall be qualified in accordance with MIL-PRF-19500. 7 MIL-PRF-19500/313F 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of MIL-PRF-19500) *3c Measurement JANS level JANTX and JANTXV levels Thermal impedance, method 3131 of MIL-STD-750. Thermal impedance, method 3131 of MIL-STD-750. 9 ICBO2, hFE1 Not applicable 10 48 hours minimum 48 hours minimum 11 ICBO2; hFE1; ∆ICBO2 = 100 percent of initial value or 5 nA dc, whichever is greater. ∆hFE1 = ±15 percent. ICBO2, hFE1 12 See 4.3.1 240 hours minimum Subgroups 2 and 3 of table I herein; ∆ICBO2 = 100 percent of initial value or 5 nA dc, whichever is greater; ∆hFE1 = ±15 percent. See 4.3.1 80 hours minimum Subgroup 2 of table I herein; ∆ICBO2 = 100 percent of initial value or 5 nA dc, whichever is greater; ∆hFE1 = ±15 percent. 13 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc; apply PTMAX = 360 mW. 4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500 “Discrete Semiconductor Die/Chip Lot Acceptance”. Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table VIb, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2). 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. 8 MIL-PRF-19500/313F 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1. Electrical measurements (end-points) and delta requirements shall be in accordance with group A, subgroup 2 and table III herein. See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) and delta requirements for JAN, JANTX, and JANTXV shall be after each step in 4.4.2.2 and shall be in accordance with group A, subgroup 2 and table III herein. 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500. Method Condition B4 1037 VCB = 10 V dc. B5 1027 (Note: If a failure occurs, resubmission shall be at the test conditions of the original sample.) VCB = 10 V dc, PD ≥ 100 percent of maximum rated PT (see 1.3). Subgroup Option 1: 96 hours minimum sample size in accordance with table VIa of MIL-PRF-19500, adjust TA or PD to achieve TJ = +275°C minimum. Option 2: 216 hours minimum, sample size = 45, c = 0; adjust TA or PD to achieve TJ = +225°C minimum. 4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed assembly lot shall be scrapped. Step Method Condition 1 1039 Steady-state life: Test condition B, 1,000 hours, VCB = 10 - 30 V dc, power shall be applied to achieve TJ = +150°C minimum and a minimum power dissipation PD ≥ 75 percent of maximum rated PT as defined in 1.3 herein. 2 1039 The steady-state life test of step 1 shall be extended to 1,000 hrs for each die design. Samples shall be selected from a wafer lot every twelve months of wafer production. Group B, step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 High-temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0. 4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements: a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot. See MIL-PRF-19500. b. Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2, conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and JANTXV) may be pulled prior to the application of final lead finish. 9 MIL-PRF-19500/313F 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and JANTXV) herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in accordance with group A, subgroup 2 and table III herein. 4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500. Method Condition C2 2036 Test condition E. C5 3131 See 4.5.7. C6 1026 1,000 hours at VCB = 10 to 30 V dc; power shall be applied to achieve TJ = +150°C minimum and a minimum power dissipation PD ≥ 75 percent of maximum rated PT as defined in 1.3 herein. Subgroup 4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Method Condition C2 2036 Test condition E. C5 3131 See 4.5.7. Subgroup C6 Not applicable. 4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any inspection lot containing the intended package type and lead finish procured to the same specification which is submitted to and passes group A tests for conformance inspection. Testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. 4.4.4 Group E inspection. Group E inspection shall be performed for qualification or re-qualification only. The tests specified in table II herein shall be performed to maintain qualification. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Emitter to collector cutoff current. Method of test shall be in accordance with method 3041 of MIL-STD-750, test condition C, except that all references to the collector and emitter of the transistor under test shall be interchanged. 4.5.3 Emitter to collector breakdown voltage. Method of test shall be in accordance with method 3011 of MIL-STD-750, test condition D, except that all references to the collector and emitter of the transistor under test shall be interchanged. 4.5.4 Forward current transfer ratio (inverted connection). Method of test shall be in accordance with method 3076 of MIL-STD-750, except that all references to the collector and emitter of the transistor under test shall be interchanged. Then hFE(inv ) = I E /I B. 4.5.5 Emitter to collector offset voltage. The transistor shall be tested in the circuit on figure 5. The base current shall be adjusted to the specified value. The voltage between the emitter and collector shall be measured using a voltmeter with an input impedance high enough that halving it does not change the measured value within the required accuracy of the measurement. 10 MIL-PRF-19500/313F 4.5.6 Small signal emitter to collector on-state resistance. The transistor shall be tested in the circuit of figure 6. The base current shall be adjusted to the specified value and an ac sinusoidal signal current, Ie, of the specified rms value shall be applied between the emitter and collector. The rms voltage Vec, between the emitter and collector shall be measured using an ac voltmeter with an input impedance high enough that halving it does not change the measured value within the required accuracy of the measurement. The small signal emitter to collector on-state resistance shall then be determined as follows: rec(on) = Vec /IE Where Vec is the rms voltage between the emitter and collector. 4.5.7 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with method 3131 of MIL-STD-750. The following details shall apply: a. Collector current magnitude during power application shall be 30 mA dc. b. Collector emitter voltage magnitude shall be 10 V dc. c. Reference temperature measuring point shall be the case. d. Reference point temperature shall be selected with +25°C ≤ TR ≤ +75°C and recorded before the test is started. e. Mounting arrangement shall be with heat sink to case. f. Maximum limit for RθJC shall be 0.25°C/mW. 11 MIL-PRF-19500/313F TABLE I. Group A inspection. Inspection 1/ Method MIL-STD-750 Conditions Symbol Limits Min Unit Max Subgroup 1 2/ Visual and mechanical examination 3/ 2071 n = 45 devices, c = 0 *Solderability 3/ 4/ 2026 n = 15 leads, c = 0 *Resistance to solvents 3/ 4/ 5/ 1022 n = 15 devices, c = 0 Temp cycling 3/ 4/ 1051 Test condition C, 25 cycles. n = 22 devices, c = 0 Heremetic seal 4/ Fine leak Gross leak 1071 n = 22 devices, c = 0 Group A, subgroup 2 Electrical measurements 4/ Bond strength 3/ 4/ 2037 Precondition TA = +250°C at t = 24 hrs or TA = +300°C at t = 2 hrs n = 11 wires, c = 0 Decap internal visual design verification 4/ 2075 n = 4, c = 0. 3011 Bias condition D; I C = 10 mA dc; pulsed (see 4.5.1) Subgroup 2 *Breakdown voltage collector to emitter V(BR)CEO 2N2432, 2N2432UB 2N2432A *Collector to base cutoff current 30 45 3036 2N2432, 2N2432UB 2N2432A *Breakdown voltage emitter to collector Bias condition D ICBO1 VCB = 30 V dc VCB = 45 V dc 3011 100 100 Bias condition D; IE = 100 µA dc; IE = 0 (see 4.5.3) Breakdown voltage emitter to collector 3011 Bias condition D; IE = 10 mA dc; IB = 0; pulsed (see 4.5.1and 4.5.3) *Collector to base cutoff current 3036 Bias condition D VCB = 25 V dc VCB = 40 V dc V(BR)EC02 15 18 V dc V dc 10 V dc ICBO2 10 10 See footnotes at end of table. 12 µA dc µA dc V(BR)ECO1 2N2432, 2N2432UB 2N2432A 2N2432, 2N2432UB 2N2432A V dc V dc nA dc nA dc MIL-PRF-19500/313F TABLE I. Group A inspection - Continued. Inspection 1/ Method MIL-STD-750 Conditions Symbol Limits Min Unit Max Subgroup 2 - Continued *Collector to emitter cutoff current 2N2432, 2N2432UB 2N2432A Emitter to collector cutoff current 3041 3041 Bias condition C ICES1 VCB = 25 V dc VCB = 40 V dc Bias condition C; VEC = 15 V dc; VBC = 0; (see 4.5.2) IECS1 10 10 2 nA dc nA dc nA dc 2 nA dc Emitter to base cutoff current 3061 Bias condition D; VEB = 15 V dc IEBO Forward-current transfer ratio 3076 VCE = 5 V dc; IC = 10 µA dc hFE1 30 Forward-current transfer ratio 3076 VCE = 5 V dc; IC = 1 mA dc hFE2 80 *Forward-current transfer ratio (inverted connection) 3076 VCE = 5 V dc; IC = 0.2 mA dc; (see 4.5.4) hFE(inv)1 2N2432, 2N2432UB 2N2432A Saturation voltage and resistance 400 2 3 3071 *Emitter to collector offset voltage IC = 10 V dc; IB = 0.5 mA dc VCE(sat) IB = 200 µA dc; IE = 0 mA dc (see 4.5.5 and figure 6) VEC(ofs)1 2N2432, 2N2432UB 2N2432A *Emitter to collector offset voltage IB = 1 mA dc; IE = 0 mA dc (see 4.5.5 and figure 6) 0.15 V dc 0.5 0.4 mV dc mV dc 1.0 0.7 mV dc mV dc 250 250 nA dc nA dc 200 nA dc VEC(ofs)2 2N2432, 2N2432UB 2N2432A Subgroup 3 High-temperature operation: *Collector to emitter cutoff current TA = +125°C 3041 2N2432, 2N2432UB 2N2432A Emitter to collector cutoff current Low-temperature operation: Bias condition C ICES2 VCB = 25 V dc VCB = 40 V dc 3041 Bias condition C; VEC = 15 V dc; VBC = 0 (see 4.5.2) TA = -55°C See footnotes at end of table. 13 IECS2 MIL-PRF-19500/313F TABLE I. Group A inspection - Continued. Inspection 1/ Method MIL-STD-750 Conditions Symbol Limits Min Unit Max Subgroup 3 - Continued Forward-current transfer ratio 3076 VCE = 5 V dc; IC = 10 µA dc; pulsed (see 4.5.1) hFE3 10 Forward-current transfer ratio 3076 VCE = 5 V dc; IC = 1 mA dc; pulsed (see 4.5.1) hFE4 25 Forward-current transfer ratio (inverted connection) 3076 VCE = 5 V dc; IE = 200 µA dc; pulsed (see 4.5.1 and 4.5.4) hFE(inv)2 1.8 Subgroup 4 *Small signal emitter collector on state resistance IB = 1 mA dc; IE = 0; Ie = 100 µA ac (rms); f = 1 kHz (see 4.5.6 and figure 6) rec(on) 2N2432, 2N2432UB 2N2432A 20 15 2 Ω Ω Small-signal short-circuit forwardcurrent transfer ratio 3306 VCE = 5 V dc; IC = 1 mA dc; f = 20 MHz |hfe | 10 Open circuit output capacitance 3236 VCB = 0; IE = 0; 100 kHz ≤ f ≤ 1 MHz Cobo 12.0 pF Input capacitance 3240 VEB = 0 V dc; IC = 0; 100 kHz ≤ f ≤ 1 MHz Cibo 12.0 pF Subgroups 5 and 6 Not applicable lSubgroup 7 4/ 1/ 2/ 3/ 4/ 5/ For sampling plan see MIL-PRF-19500. For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure in group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon submission. Separate samples may be used. Not required for JANS devices. Not required for laser marked devices. 14 MIL-PRF-19500/313F TABLE II. Group E inspection (all quality levels) - for qualification only. MIL-STD-750 Inspection Method Qualification Conditions Subgroup 1 45 devices c=0 Temperature cycling (air to air) 1051 Hermetic seal 1071 Test condition C, 500 cycles Fine leak Gross leak Electrical measurements See group A, subgroup 2 and table III herein. Subgroup 2 Intermittent life 45 devices c=0 1037 VCB = 10 V dc, 6,000 cycles, forced air cooling allowed on cooling cycle only. See group A, subgroup 2 and table III herein. Electrical measurements Subgroup 3 Not applicable Subgroup 4 Thermal resistance 3131 RθJC see 4.5.7. 22 devices c=0 Subgroup 5, 6, and 7 Not applicable 45 devices c=0 *Subgroup 8 Reverse stability 1033 Condition A for devices ≥ 400 V dc. Condition B for devices < 400 V dc. 15 MIL-PRF-19500/313F TABLE III. Groups B and C delta measurements. 1/ 2/ 3/ 4/ Step 1 Inspection Collector-base cutoff current Method MIL-STD-750 Conditions 3036 Bias condition D 2N2432, 2N2432UB 2N2432A 2 1/ 2/ 3/ 4/ Forward current transfer ratio Symbol Limit ∆ICB02 100 percent of initial value or 5 nA dc, whichever is greater. ∆hFE2 ±25 percent change from initial reading. Unit VCB = 25 V dc VCB = 40 V dc 3076 VCE = 10 V dc; IC = 1.0 mA dc; pulsed see 4.5.1 Devices which exceed the group A limits for this test shall not be accepted. The delta measurements for group B, table VIa (JANS) of MIL-PRF-19500 are as follows: Subgroup 3, 5, and 6; see table III herein, steps 1 and 2. The delta measurements for 4.4.2.2 herein (group B, JAN, JANTX, and JANTXV) are as follows: Steps 1 and 2 of table III shall be performed after each step in 4.4.2.2 herein. The delta measurements for group C, table VII of MIL-PRF-19500 are as follows: Subgroup 6, see table III herein, steps 1 and 2 for JANS only. 16 MIL-PRF-19500/313F FIGURE 5. Emitter to collector offset voltage test circuit. FIGURE 6. Small-signal emitter-collector on-state resistance test circuit. 17 MIL-PRF-19500/313F 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Point's packaging activity within the Military Department or Defense Agency, or within the Military Department's System Command. Packaging data retrieval is available from the managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents must specify the following: a. Title, number, and date of this specification. b. Issue of DoDISS to be cited in the solicitation and, if required, the specific issue of individual documents referenced (see 2.2). c. Lead finish (see 3.4.1). d. Type designation and product assurance level. e. Packaging requirements (see 5.1). 6.3 Suppliers of JANHC die. The qualified JANC suppliers with the applicable letter version (example, JANHCA2N2432 or JANHCA2N2432A) will be identified on the QML. JANC ordering information PIN 2N2432 2N2432A Manufacturer 12498 43611 JANHCA2N2432 JANHCA2N2432A JANHCB2N2432 JANHCB2N2432A 2N2432 2N2432A JANKCB2N2432 JANKCB2N2432A 6.4 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center, Columbus, ATTN: DSCC-VQE, P.O. Box 3990, Columbus, OH 43216-5000. 18 MIL-PRF-19500/313F 6.5 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where changes from the previous issue were made. This was done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous issue. Custodians: Army - CR Navy - EC Air Force - 11 NASA - NA DLA - CC Preparing activity: DLA - CC (Project 5961-4515-01) Review activities: Army - MI Navy - AS, MC Air Force - 19 19 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. 1. DOCUMENT NUMBER MIL-PRF-19500/313F I RECOMMEND A CHANGE: 2. DOCUMENT DATE 27 February 2002 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW POWER TYPES 2N2432, 2N2432A, 2N2432UB, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC. 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) b. ORGANIZATION c. ADDRESS (Include Zip Code) d. TELEPHONE (Include Area Code) COMMERCIAL DSN FAX EMAIL 7. DATE SUBMITTED 8. PREPARING ACTIVITY a. Point of Contact Alan Barone c. ADDRESS Defense Supply Center Columbus ATTN: DSCC-VAC P.O. Box 3990 Columbus, OH 43216-5000 DD Form 1426, Feb 1999 (EG) b. TELEPHONE Commercial DSN FAX EMAIL 614-692-0510 850-0510 614-692-6939 [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman, Suite 2533 Fort Belvoir, VA 22060-6221 Telephone (703) 767-6888 DSN 427-6888 Previous editions are obsolete WHS/DIOR, Feb 99