ETC PNZ163NC(PN163

Phototransistors
PNZ163NC (PN163-(NC))
Silicon NPN Phototransistor
3.5±0.3
Gate the rest
2.4 1.1 0.8 max.
1.1
0.8
Unit : mm
For optical control systems
Features
High sensitivity
3.0±0.3
ø1.1
R0.5
1.95±0.25
1.4±0.2
0.9
0.5
Fast response : tr = 4 µs (typ.)
12 min.
Not soldered 2.15 max.
Adoption of visible light cutoff resin
Ultraminiature, thin side-view type package
2-0.5±0.15
2
2.54
0.3±0.15
1
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol
Ratings
Unit
Collector to emitter voltage
VCEO
20
V
Collector current
IC
20
mA
Collector power dissipation
PC
50
mW
Operating ambient temperature
Topr
–25 to +85
˚C
Storage temperature
Tstg
–30 to +100
˚C
1: Collector
2: Emitter
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Dark current
ICEO
Sensitivity to infrared emitters
Peak sensitivity wavelength
Acceptance half angle
*2
min
typ
VCE = 10V, H =
15µW/cm2
6
max
Unit
0.2
µA
40
µA
λP
VCE = 10V
850
nm
θ
Measured from the optical axis to the half power point
25
deg.
Rise time
tr*2
VCC = 10V, ICE(L) = 5mA
4
µs
Fall time
tf*2
RL = 100Ω
4
Collector saturation voltage
*1
SIR
*1
Conditions
VCE = 10V
VCE(sat)
ICE(L) = 3µA, H = 15µW/cm2
µs
0.5
V
Measurements were made using infrared light (λ = 940 nm) as a light source.
Switching time measurement circuit
Sig.IN
VCC
(Input pulse)
Sig.OUT (Output pulse)
RL
;;;;
;;
50Ω
90%
10%
td
tr
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
Note) The part number in the parenthesis shows conventional part number.
1
Phototransistors
PNZ163NC
PC — Ta
ICE(L) — VCE
30
20
10
0
20
40
60
Ambient temperature
80
2.0
1.5
500 lx
1.0
0.5
0
100
L = 1000 lx
Ta (˚C )
100 lx
0
4
8
1
10 –1
40
Ambient temperature
60
80
50
40
30
20
30˚
S (%)
40
80
80
60
40
0
600
120
50˚
60˚
VCC = 10V
Ta = 25˚C
900
1000 1100 1200
VCC = 10V
Ta = 25˚C
10 4
10 3
10 2
RL = 1kΩ
10
500Ω
100Ω
70˚
80˚
800
tf — ICE(L)
tf (µs)
40˚
700
Wavelength λ (nm)
Ta (˚C )
10 3
tr (µs)
60
VCE = 10V
Ta = 25˚C
tr — ICE(L)
20˚
Rise time
70
0
10 4
Relative sensitivity S (%)
90
80
10 3
L (lx)
20
Ambient temperature
100
10 2
10
Illuminance
Spectral sensitivity characteristics
1
10 –1
– 40
100
1
100
10
Ta (˚C )
10˚
10 –1
VCE (V)
VCE = 10V
T = 2856K
Directivity characteristics
0˚
1
10 –2
24
Relative sensitivity
ICE(L) (mA)
Collector photo current
ICEO (nA)
Dark current
10
20
20
VCE = 10V
Ta = 25˚C
T = 2856K
10
ICE(L) — Ta
10 2
VCE = 10V
0
16
Collector to emitter voltage
ICEO — Ta
10 –2
– 20
12
Fall time
0
– 20
2.5
ICE(L) (mA)
40
Ta = 25˚C
T = 2856K
Collector photo current
ICE(L) (mA)
50
10 2
ICE(L) — L
10 2
3.0
Collector photo current
Collector power dissipation
PC (mW)
60
10 2
RL = 1kΩ
10
500Ω
100Ω
1
1
90˚
10 –1
10 –2
10 –1
1
Collector photo current
2
10
10 2
ICE(L) (mA)
10 –1
10 –2
10 –1
1
Collector photo current
10
10 2
ICE(L) (mA)
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2001 MAR