BFS 483 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA • fT = 8GHz F = 1.2dB at 900MHz • Two (galvanic) internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFS 483 SOT-363 RHs Q62702-F1574 1/4 = B 2/5 = E 3/6 = C data below is of a single transistor Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 65 Base current IB 5 Total power dissipation Ptot TS ≤ 40 °C Values Unit V mA mW 450 Junction temperature Tj Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 150 °C Thermal Resistance Junction - soldering point 1) RthJS ≤ 245 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-16-1996 BFS 483 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current 12 100 nA - - 100 IEBO µA - - 1 hFE IC = 15 mA, VCE = 8 V Semiconductor Group - ICBO VEB = 1 V, IC = 0 DC current gain µA - VCB = 10 V, IE = 0 Emitter-base cutoff current - ICES VCE = 20 V, VBE = 0 Collector-base cutoff current V 50 2 100 200 Dec-16-1996 BFS 483 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC Characteristics Transition frequency fT IC = 25 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance 6 pF - 0.4 0.6 - 0.13 - - 1 - Cce VCE = 10 V, f = 1 MHz Emitter-base capacitance 8 Ccb VCB = 10 V, f = 1 MHz Collector-emitter capacitance GHz Ceb VEB = 0.5 V, f = 1 MHz F Noise figure dB IC = 5 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz - 1.2 - f = 1.8 GHz - 2 - - 19 - - 12.5 - f = 900 MHz - 15 - f = 1.8 GHz - 9.5 - Power gain 1) Gms IC = 15 mA, VCE = 8 V, f = 900 MHz ZS = ZSopt, ZL = ZLopt Power gain 2) Gma IC = 15 mA, VCE = 8 V, f = 1.8 GHz ZS = ZSopt, ZL = ZLopt Transducer gain |S21e|2 IC = 15 mA, VCE = 8 V, ZS =ZL= 50 Ω 1) Gms = |S21/S12| 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-16-1996 BFS 483 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 500 mW Ptot 400 TS 350 300 250 200 TA 150 100 50 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 RthJS 10 2 Ptotmax/PtotDC - K/W 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0. 1 0.05 0.2 0.1 0.005 D=0 10 1 -7 10 10 -6 10 -5 10 Semiconductor Group -4 10 -3 10 -2 -1 10 s 10 tp 0 4 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Dec-16-1996 BFS 483 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 1.0 8 pF Ccb GHZ 0.8 fT 6 0.7 8V 5 0.6 0.5 4 0.4 5V 3V 3 2V 0.3 2 1V 0.7V 0.2 1 0.1 0.0 0 0 4 8 12 16 V VR 22 0 10 20 30 40 Power Gain Gma, Gms = f(IC) Power Gain Gma, Gms = f(IC) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 20 50 60 mA 75 IC 14 dB dB G 8V 16 G 8V 5V 14 10 3V 12 5V 8 2V 10 3V 6 8 2V 1V 6 4 0.7V 4 1V 2 2 0 0.7V 0 0 10 20 Semiconductor Group 30 40 50 60 mA 75 IC 0 5 10 20 30 40 50 60 mA 75 IC Dec-16-1996 BFS 483 Power Gain Gma, Gms = f(VCE):_____ |S21 |2 Intermodulation Intercept Point IP3=f(IC) = f(VCE):--------- (3rd order, Output, ZS=ZL=50Ω) f = Parameter VCE = Parameter, f = 900MHz 20 30 IC=15mA 0.9GHz dB G 8V dBm 16 IP3 0.9GHz 26 5V 24 14 22 12 1.8GHz 3V 20 10 1.8GHz 18 2V 8 16 6 14 4 12 1V 2 10 0 8 0 1 2 3 4 5 6 7 8 V 10 0 4 8 12 16 20 24 28 V CE Power Gain Gma, Gms = f(f) Power Gain |S21|2= f(f) VCE = Parameter VCE = Parameter 30 32 dB IC=15mA IC=15mA 28 G 32 mA 38 IC dB S21 26 24 20 22 20 15 18 16 14 10 12 10 6 4 0.0 8V 5 8V 8 1V 0.7V 1V 0.7V 0.5 1.0 Semiconductor Group 1.5 2.0 2.5 GHz f 0 0.0 3.5 6 0.5 1.0 1.5 2.0 2.5 GHZ f 3.5 Dec-16-1996